Insulated Gate Bipolar Transistor, 50A I(C), 1000V V(BR)CES, N-Channel, POWER MODULE-7
| Parameter Name | Attribute value |
| Maker | Infineon |
| Parts packaging code | MODULE |
| package instruction | POWER MODULE-7 |
| Contacts | 7 |
| Reach Compliance Code | compliant |
| Shell connection | ISOLATED |
| Maximum collector current (IC) | 50 A |
| Collector-emitter maximum voltage | 1000 V |
| Configuration | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE |
| Gate-emitter maximum voltage | 20 V |
| JESD-30 code | R-PUFM-X7 |
| Number of components | 2 |
| Number of terminals | 7 |
| Maximum operating temperature | 150 °C |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | FLANGE MOUNT |
| Polarity/channel type | N-CHANNEL |
| Maximum power dissipation(Abs) | 400 W |
| Certification status | Not Qualified |
| surface mount | NO |
| Terminal form | UNSPECIFIED |
| Terminal location | UPPER |
| transistor applications | POWER CONTROL |
| Transistor component materials | SILICON |
| Nominal on time (ton) | 30 ns |
| VCEsat-Max | 5 V |
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