DISCRETE SEMICONDUCTORS
DATA SHEET
BSR20; BSR20A
PNP high voltage transistors
Product specification
Supersedes data of 2004 Jan 16
2004 Mar 15
Philips Semiconductors
Product specification
PNP high voltage transistors
FEATURES
•
Low current (max. 300 mA)
•
High voltage (max. 150 V).
APPLICATIONS
•
General purpose switching and amplification
•
Telephony applications.
DESCRIPTION
PNP high-voltage transistor in a SOT23 plastic package.
NPN complements: BSR19 and BSR19A.
MARKING
TYPE NUMBER
BSR20
BSR20A
Note
1.
∗
= p : Made in Hong Kong.
∗
= t : Made in Malaysia.
∗
= W : Made in China.
ORDERING INFORMATION
PACKAGE
TYPE NUMBER
NAME
BSR20
BSR20A
−
−
DESCRIPTION
plastic surface mounted package; 3 leads
plastic surface mounted package; 3 leads
MARKING CODE
(1)
58* or T35
59* or T36
Top view
handbook, halfpage
BSR20; BSR20A
PINNING
PIN
1
2
3
base
emitter
collector
DESCRIPTION
3
3
1
2
1
2
MAM256
Fig.1 Simplified outline (SOT23) and symbol.
VERSION
SOT23
SOT23
2004 Mar 15
2
Philips Semiconductors
Product specification
PNP high voltage transistors
QUICK REFERENCE DATA
SYMBOL
V
CBO
PARAMETER
collector-base voltage
BSR20
BSR20A
V
CEO
collector-emitter voltage
BSR20
BSR20A
I
CM
P
tot
h
FE
peak collector current
total power dissipation
DC current gain
BSR20
BSR20A
f
T
transition frequency
I
C
=
−10
mA; V
CE
=
−10
V; f = 100 MHz
T
amb
≤
25
°C
I
C
=
−10
mA; V
CE
=
−5
V
40
60
100
open base
−
−
−
−
open emitter
−
−
CONDITIONS
BSR20; BSR20A
MIN.
MAX.
−130
−160
−120
−150
−600
250
180
240
−
V
V
V
V
UNIT
mA
mW
MHz
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V
CBO
BSR20
BSR20A
V
CEO
collector-emitter voltage
BSR20
BSR20A
V
EBO
I
C
I
CM
I
B
P
tot
T
stg
T
j
T
amb
emitter-base voltage
collector current (DC)
peak collector current
base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
T
amb
≤
25
°C
open collector
open base
−
−
−
−
−
−
−
−65
−
−65
−120
−150
−5
−300
−600
−100
250
+150
150
+150
V
V
V
mA
mA
mA
mW
°C
°C
°C
PARAMETER
collector-base voltage
CONDITIONS
open emitter
−
−
−130
−160
V
V
MIN.
MAX.
UNIT
THERMAL CHARACTERISTICS
SYMBOL
R
th(j-a)
Note
1. Transistor mounted on an FR4 printed-circuit board.
PARAMETER
thermal resistance from junction to ambient
CONDITIONS
note 1
VALUE
500
UNIT
K/W
2004 Mar 15
3
Philips Semiconductors
Product specification
PNP high voltage transistors
CHARACTERISTICS
T
amb
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
PARAMETER
collector cut-off current
BSR20
I
CBO
collector cut-off current
BSR20A
I
EBO
h
FE
emitter cut-off current
DC current gain
BSR20
BSR20A
DC current gain
BSR20
BSR20A
DC current gain
BSR20
BSR20A
V
CEsat
C
c
f
T
collector-emitter saturation
voltage
collector capacitance
transition frequency
BSR20
BSR20A
I
C
=
−10
mA; I
B
=
−1
mA
I
C
=
−50
mA; I
B
=
−5
mA
I
E
= 0 A; V
CB
=
−10
V; f = 1 MHz
I
C
=
−10
mA; V
CE
=
−10
V;
f = 100 MHz
I
C
=
−50
mA; V
CE
=
−5
V
40
50
−
−
−
100
100
I
C
=
−10
mA; V
CE
=
−5
V
40
60
I
E
= 0 A; V
CB
=
−120
V
I
C
= 0 A; V
EB
=
−4
V
I
C
=
−1
mA; V
CE
=
−5
V
30
50
−
−
I
E
= 0 A; V
CB
=
−100
V
−
CONDITIONS
BSR20; BSR20A
MIN.
MAX.
−100
−100
−50
−50
−50
−
−
180
240
−
−
−200
−500
6
400
300
UNIT
nA
µA
nA
µA
nA
I
E
= 0 A; V
CB
=
−100
V; T
amb
= 100
°C −
I
E
= 0 A; V
CB
=
−120
V; T
amb
= 100
°C −
mV
mV
pF
MHz
MHz
2004 Mar 15
4
Philips Semiconductors
Product specification
PNP high voltage transistors
BSR20; BSR20A
handbook, full pagewidth
200
MGD813
hFE
150
VCE =
−5
V
100
50
0
−10
−1
−1
−10
−10
2
IC mA
−10
3
Fig.2 DC current gain; typical values.
2004 Mar 15
5
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