ZTX549STZ datasheet, PDF - EEWORLD Datasheet

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ZTX549STZ: DescriptionSmall Signal Bipolar Transistor, 1A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, TO-92 COMPATIBLE, E-LINE PACKAGE-3; CategoryDiscrete semiconductor The transistor; File Size76KB，3 Pages; ManufacturerDiodes Incorporated; Environmental Compliance

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ZTX549STZ Overview

Small Signal Bipolar Transistor, 1A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, TO-92 COMPATIBLE, E-LINE PACKAGE-3

ZTX549STZ Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	Diodes Incorporated
Parts packaging code	TO-92
package instruction	IN-LINE, R-PSIP-W3
Contacts	3
Reach Compliance Code	compliant
ECCN code	EAR99
Factory Lead Time	15 weeks
Maximum collector current (IC)	1 A
Collector-emitter maximum voltage	30 V
Configuration	SINGLE
Minimum DC current gain (hFE)	40
JESD-30 code	R-PSIP-W3
JESD-609 code	e3
Number of components	1
Number of terminals	3
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	IN-LINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	PNP
Certification status	Not Qualified
surface mount	NO
Terminal surface	Matte Tin (Sn)
Terminal form	WIRE
Terminal location	SINGLE
Maximum time at peak reflow temperature	40
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	100 MHz

ZTX549STZ Preview

PNP SILICON PLANAR

MEDIUM POWER TRANSISTORS

ISSUE 1 MARCH 94

FEATURES

* 30 Volt V

CEO

* 1 Amp continuous current

* P

tot

= 1 Watt

ZTX549

ZTX549A

C

B

E

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Peak Pulse Current

Continuous Collector Current

Power Dissipation: at T

amb

=25°C

derate above 25°C

Operating and Storage Temperature Range

PARAMETER

Collector-Base Breakdown

Voltage

Collector-Emitter

Breakdown Voltage

Emitter-Base Breakdown

Voltage

Collector Cut-Off Current

Emitter Cut-Off Current

Collector-Emitter

Saturation Voltage

ZTX549A

Base-Emitter

Saturation Voltage

Base-Emitter

Saturation Voltage

Static Forward Current

Transfer Ratio

ZTX549

ZTX549A

V

BE(sat)

V

BE(on)

h

FE

70

80

40

100

150

-0.9

-0.85

200

130

80

160

200

3-191

300

500

SYMBOL

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

I

CBO

I

EBO

V

CE(sat)

-0.25

-0.50

MIN.

-35

-30

-5

-0.1

-10

-0.1

-0.50

-0.75

-0.30

-1.25

-1

SYMBOL

V

CBO

V

CEO

V

EBO

I

CM

I

C

P

tot

T

j

:T

stg

TYP.

MAX.

-35

-30

-5

-2

-1

1

5.7

E-Line

TO92 Compatible

VALUE

UNIT

V

A

W

mW/ °C

°C

-55 to +200

UNIT

V

µ

A

µ

A

µ

A

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C unless otherwise stated).

CONDITIONS.

I

C

=-100

µ

A

I

C

=-10mA

I

E

=-100

µ

A

V

CB

=-30V

V

CB

=-30V, T

amb

=100°C

V

EB

=-4V

I

C

=-1A, I

B

=-100mA*

I

C

=-2A, I

B

=-200mA*

I

C

=-100mA, I

B

=-1mA*

I

C

=-1A, I

B

=-100mA*

IC=-1A, V

CE

=-2V*

I

C

=-50mA, V

CE

=-2V*

I

C

=-1A, V

CE

=-2V*

I

C

=-2A, V

CE

=-2V*

I

C

=-500mA, V

CE

=-2V*

I

C

=-500mA, V

CE

=-2V*

V

*Measured under pulsed conditions. Pulse width=300

µ

s. Duty cycle

≤

2%

ZTX549

ZTX549A

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C).

PARAMETER

Transition Frequency

Output Capacitance

Switching Times

SYMBOL

f

T

C

obo

t

on

t

off

300

50

MIN.

100

25

TYP.

MAX.

UNIT

MHz

pF

ns

CONDITIONS.

I

C

=-100mA, V

CE

=-5V

f=100MHz

V

CB

=-10V, f=1MHz

I

C

=-500mA, V

CC

=-10V

I

B1

=I

B2

=-50mA

3-192

ZTX549

ZTX549A

TYPICAL CHARACTERISTICS

td,tr,tf

(ns)

180

0.8

160

140

ts

(ns)

I

B1

=I

B2

=I

C

/10 1800

1600

1400

ts

tr

1200

1000

td

800

600

400

tf

0.01

0.1

1

200

0

V

CE(sat)

- (Volts)

0.6

120

Switching time

100

80

60

40

20

0.4

I

C

/I

B

=100

0.2

I

C

/I

B

=10

0

0.01

0.1

1

10

0

I

C

-

Collector Current (Amps)

I

C

-

Collector Current (Amps)

V

CE(sat)

v I

C

Switching Speeds

200

1.4

160

120

1.2

V

BE(sat)

- (Volts)

h

FE

- Gain

V

CE

=2V

1.0

I

C

/I

B

=100

I

C

/I

B

=10

80

0.8

40

0.6

0.001

0.01

0.1

1

10

0.01

0.1

1

10

I

C

-

Collector Current (Amps)

I

C

-

Collector Current (Amps)

h

FE

v I

C

10

1.0

I

C

/I

B

=10

V

BE(sat)

v I

C

Single Pulse Test at T

amb

=25°C

I

C

- Collector Current (Amps)

V

BE

- (Volts)

0.9

1

0.8

0.7

0.1

D.C.

1s

100ms

10ms

1.0ms

0.3ms

0.1ms

0.6

0.001

0.01

0.1

1

10

0.01

0.1

1

10

100

I

C

-

Collector Current (Amps)

V

CE

-

Collector Voltage (Volts)

V

BE(on)

v I

C

Safe Operating Area

3-193

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ZTX549STZ Related Products

	ZTX549STZ	ZTX549STOB
Description	Small Signal Bipolar Transistor, 1A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, TO-92 COMPATIBLE, E-LINE PACKAGE-3	Small Signal Bipolar Transistor, 1A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, TO-92 COMPATIBLE, E-LINE PACKAGE-3
Is it Rohs certified?	conform to	conform to
Maker	Diodes Incorporated	Diodes Incorporated
Parts packaging code	TO-92	TO-92
package instruction	IN-LINE, R-PSIP-W3	IN-LINE, R-PSIP-W3
Contacts	3	3
Reach Compliance Code	compliant	not_compliant
ECCN code	EAR99	EAR99
Maximum collector current (IC)	1 A	1 A
Collector-emitter maximum voltage	30 V	30 V
Configuration	SINGLE	SINGLE
Minimum DC current gain (hFE)	40	40
JESD-30 code	R-PSIP-W3	R-PSIP-W3
JESD-609 code	e3	e3
Number of components	1	1
Number of terminals	3	3
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	IN-LINE	IN-LINE
Peak Reflow Temperature (Celsius)	260	260
Polarity/channel type	PNP	PNP
Certification status	Not Qualified	Not Qualified
surface mount	NO	NO
Terminal surface	Matte Tin (Sn)	Matte Tin (Sn)
Terminal form	WIRE	WIRE
Terminal location	SINGLE	SINGLE
Maximum time at peak reflow temperature	40	40
transistor applications	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON
Nominal transition frequency (fT)	100 MHz	100 MHz

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