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Datasheet> All Categories > Discrete semiconductor> The transistor> BSS84Q-7-F
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BSS84Q-7-F

Description
Small Signal Field-Effect Transistor, 0.13A I(D), 50V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3
CategoryDiscrete semiconductor    The transistor   
File Size96KB，5 Pages
ManufacturerDiodes Incorporated
Environmental Compliance  
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BSS84Q-7-F Overview

Small Signal Field-Effect Transistor, 0.13A I(D), 50V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3

BSS84Q-7-F Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerDiodes Incorporated
package instructionGREEN, PLASTIC PACKAGE-3
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
Factory Lead Time16 weeks
Samacsys DescriptionP-CHANNEL ENHANCEMENT MODE MOSFET
Other featuresHIGH RELIABILITY, LOW THRESHOLD
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage50 V
Maximum drain current (Abs) (ID)0.13 A
Maximum drain current (ID)0.13 A
Maximum drain-source on-resistance10 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)12 pF
JESD-30 codeR-PDSO-G3
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeP-CHANNEL
Maximum power dissipation(Abs)0.3 W
surface mountYES
Terminal surfaceMatte Tin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature40
transistor applicationsSWITCHING
Transistor component materialsSILICON

BSS84Q-7-F Preview

BSS84
P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V
(BR)DSS
-50V
R
DS(on) max
10 @ V
GS
= -5V
I
D
T
A
= +25°C
-130mA
Features and Benefits
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Description
This MOSFET has been designed to minimize the on-state resistance
(R
DS(on)
) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Applications
General Purpose Interfacing Switch
Power Management Functions
Analog Switch
Mechanical Data
Drain
Case: SOT23
Case Material: UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Matte Tin Finish (Lead Free Plating) Solderable per
MIL-STD-202, Method 208
e3
Terminal Connections: See Diagram
Weight: 0.008 grams (approximate)
SOT23
D
Gate
G
Source
S
Top View
Equivalent Circuit
Top View
Ordering Information
(Note 4)
Part Number
BSS84-7-F
BSS84Q-7-F
BSS84-13-F
BSS84Q-13-F
Notes:
Qualification
Commercial
Automotive
Commercial
Automotive
Case
SOT23
SOT23
SOT23
SOT23
Packaging
3000/Tape & Reel
3000/Tape & Reel
10000/Tape & Reel
10000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html
Marking Information
K84
K84 = Product Type Marking Code
YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)
YM
= Date Code Marking for CAT (Chengdu Assembly/ Test site)
Y or
Y
= Year (ex: A = 2013)
M = Month (ex: 9 = September)
K84
YM
Chengdu A/T Site
Date Code Key
Year
Code
Month
Code
1998
J
Jan
1
1999
K
Feb
2
2000
L
Shanghai A/T Site
2001
M
Mar
3
2002
N
Apr
4
2003
P
May
5
2004
R
Jun
6
…
…
2011
Y
Jul
7
2012
Z
Aug
8
2013
A
Sep
9
2014
B
Oct
O
2015
C
2016
D
Nov
N
2017
E
Dec
D
August 2013
© Diodes Incorporated
YM
BSS84
Document number: DS30149 Rev. 20 - 2
1 of 5
www.diodes.com
BSS84
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Drain-Gate Voltage R
GS
20K
Gate-Source Voltage
Drain Current (Note 5)
Pulsed Drain Current
Symbol
V
DSS
V
DGR
V
GSS
I
D
I
DM
Value
-50
-50
20
-130
-1.2
Units
V
V
V
mA
A
Continuous
Continuous
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Symbol
P
D
R
JA
T
J
, T
STG
Value
300
417
-55 to +150
Units
mW
C/W
C
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS (Note 7)
Turn-On Delay Time
Turn-Off Delay Time
Notes:
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(th)
R
DS (ON)
g
FS
C
iss
C
oss
C
rss
t
D(ON)
t
D(OFF)
Min
-50

-0.8
0.05
Typ
10
18
Max
-1
-2
-100
10
-2.0
10
45
25
12
Unit
V
µA
µA
nA
nA
V
S
pF
pF
pF
ns
ns
Test Condition
V
GS
= 0V, I
D
= -250µA
V
DS
= -50V, V
GS
= 0V, T
J
= +25°C
V
DS
= -50V, V
GS
= 0V, T
J
= +125°C
V
DS
= -25V, V
GS
= 0V, T
J
= +25°C
V
GS
=
20V,
V
DS
= 0V
V
DS
= V
GS
, I
D
= -1mA
V
GS
= -5V, I
D
= -0.100A
V
DS
= -25V, I
D
= -0.1A
V
DS
= -25V, V
GS
= 0V, f = 1.0MHz
V
DD
= -30V, I
D
= -0.27A,
R
GEN
= 50, V
GS
= -10V
5. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001,
which can be found on our website at http://www.diodes.com.
6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to production testing
BSS84
Document number: DS30149 Rev. 20 - 2
2 of 5
www.diodes.com
August 2013
© Diodes Incorporated
BSS84
400
I
D
, DRAIN-SOURCE CURRENT (mA)
-600
350
P
D
, POWER DISSIPATION (mW)
300
250
200
150
100
50
0
-500
-400
-300
-200
-100
50
75 100 125 150 175 200
T
A
, AMBIENT TEMPERATURE (°C)
Fig. 1 Max Power Dissipation vs. Ambient Temperature
0
25
0
0
-1
-2
-3
-4
-5
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Fig. 2 Drain-Source Current vs. Drain-Source Voltage
-1.0
10
R
DS(ON)
, NORMALIZED DRAIN-SOURCE
ON-RESISTANCE (
)
9
8
7
6
5
4
3
2
T
A
= 125
°
C
-0.8
I
D
, DRAIN-CURRENT (A)
-0.6
-0.4
-0.2
1
0
T
A
= 25
°
C
0.0
0
-2
-3
-4
-5
-6
-7
-8
V
GS
, GATE-SOURCE VOLTAGE (V)
Fig. 3 Drain-Current vs. Gate-Source Voltage
-1
0
-2
-3
-4
-5
V
GS
, GATE-SOURCE (V)
Fig. 4 On-Resistance vs. Gate-Source Voltage
-1
15
V
GS
= -10V
I
D
= -0.13A
25.0
R
DS(ON)
, ON-RESISTANCE (
)
R
DS(ON)
, ON-RESISTANCE (
)
12
20.0
9
15.0
6
10.0
3
5.0
0
-50
-25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (°C)
Fig. 5 On-Resistance vs. Junction Temperature
0.0
0.0
-0.4
-0.6
-0.8
I
D
, DRAIN-CURRENT (A)
Fig. 6 On-Resistance vs. Drain-Current
-0.2
-1.0
BSS84
Document number: DS30149 Rev. 20 - 2
3 of 5
www.diodes.com
August 2013
© Diodes Incorporated
BSS84
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
A
B C
H
K
D
J
F
G
L
M
K1
SOT23
Dim
Min
Max
Typ
A
0.37
0.51
0.40
B
1.20
1.40
1.30
C
2.30
2.50
2.40
D
0.89
1.03 0.915
F
0.45
0.60 0.535
G
1.78
2.05
1.83
H
2.80
3.00
2.90
J
0.013 0.10
0.05
K
0.903 1.10
1.00
K1
-
-
0.400
L
0.45
0.61
0.55
M
0.085 0.18
0.11
0°
8°
-

All Dimensions in mm
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
Y
Z
C
Dimensions Value (in mm)
Z
2.9
X
0.8
Y
0.9
C
2.0
E
1.35
X
E
BSS84
Document number: DS30149 Rev. 20 - 2
4 of 5
www.diodes.com
August 2013
© Diodes Incorporated
BSS84
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2013, Diodes Incorporated
www.diodes.com
BSS84
Document number: DS30149 Rev. 20 - 2
5 of 5
www.diodes.com
August 2013
© Diodes Incorporated
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BSS84Q-7-F Related Products

BSS84Q-7-F BSS84Q-13-F
Description Small Signal Field-Effect Transistor, 0.13A I(D), 50V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3 Small Signal Field-Effect Transistor, 0.13A I(D), 50V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET,
Is it lead-free? Lead free Lead free
Is it Rohs certified? conform to conform to
Maker Diodes Incorporated Diodes Incorporated
Reach Compliance Code compliant compliant
ECCN code EAR99 EAR99
Factory Lead Time 16 weeks 14 weeks
Other features HIGH RELIABILITY, LOW THRESHOLD HIGH RELIABILITY
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 50 V 50 V
Maximum drain current (Abs) (ID) 0.13 A 0.13 A
Maximum drain current (ID) 0.13 A 0.13 A
Maximum drain-source on-resistance 10 Ω 10 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss) 12 pF 12 pF
JESD-30 code R-PDSO-G3 R-PDSO-G3
JESD-609 code e3 e3
Humidity sensitivity level 1 1
Number of components 1 1
Number of terminals 3 3
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) 260 260
Polarity/channel type P-CHANNEL P-CHANNEL
Maximum power dissipation(Abs) 0.3 W 0.3 W
surface mount YES YES
Terminal surface Matte Tin (Sn) Matte Tin (Sn)
Terminal form GULL WING GULL WING
Terminal location DUAL DUAL
Maximum time at peak reflow temperature 40 40
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON

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