BSS84D75Z datasheet, PDF - EEWORLD Datasheet

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BSS84D75Z: DescriptionSmall Signal Field-Effect Transistor, 0.13A I(D), 50V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92; CategoryDiscrete semiconductor The transistor; File Size523KB，13 Pages; ManufacturerFairchild; Websitehttp://www.fairchildsemi.com/

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BSS84D75Z Overview

Small Signal Field-Effect Transistor, 0.13A I(D), 50V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92

BSS84D75Z Parametric

Parameter Name	Attribute value
Maker	Fairchild
package instruction	CYLINDRICAL, O-PBCY-T3
Reach Compliance Code	unknown
ECCN code	EAR99
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	50 V
Maximum drain current (ID)	0.13 A
Maximum drain-source on-resistance	10 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)	12 pF
JEDEC-95 code	TO-92
JESD-30 code	O-PBCY-T3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	CYLINDRICAL
Polarity/channel type	P-CHANNEL
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	BOTTOM
transistor applications	SWITCHING
Transistor component materials	SILICON

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May 1999

BSS84 / BSS110

P-Channel Enhancement Mode Field Effect Transistor

General Description

These P-Channel enhancement mode power field effect

transistors are produced using Fairchild's proprietary, high

cell density, DMOS technology. This very high density

process is designed to minimize on-state resistance, provide

rugged and reliable performance and fast switching. They

can be used, with a minimum of effort, in most applications

requiring up to 0.17A DC and can deliver pulsed currents up

to 0.68A. This product is particularly suited to low voltage

applications requiring a low current high side switch.

Features

BSS84: -0.13A, -50V. R

DS(ON)

= 10

Ω

@ V

= -5V.

BSS110: -0.17A, -50V. R

DS(ON)

= 10

Ω

@ V

= -10V

Voltage controlled p-channel small signal switch.

High density cell design for low R

DS(ON)

High saturation current

____________________________________________________________________________________________

Absolute Maximum Ratings

Symbol

Parameter

= 25°C unless otherwise noted

BSS84

BSS110

Units

DSS

DGR

GSS

STG

Drain-Source Voltage

Drain-Gate Voltage (R

< 20 K

Ω

)

Gate-Source Voltage - Continuous

Drain Current - Continuous @ T

= 30/35

- Pulsed

@ T

= 25

Maximum Power Dissipation

-0.13

-0.52

0.36

-50

±20

-0.17

-0.68

0.63

-55 to 150

300

°C

Operating and Storage Temperature Range

Maximum lead temperature for soldering

purposes, 1/16" from case for 10 seconds

THERMAL CHARACTERISTICS

Thermal Resistance, Junction-to-Ambient

350

200

°C/W

BSS84 Rev. C1 / BSS110. Rev. A2

BSS84D75Z Related Products

	BSS84D75Z	BSS84L34Z	BSS84J18Z	BSS84J05Z	BSS84J35Z	BSS84D26Z	BSS84D74Z	BSS84D27Z	BSS110D87Z
Description	Small Signal Field-Effect Transistor, 0.13A I(D), 50V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92	Small Signal Field-Effect Transistor, 0.13A I(D), 50V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92, TO-92, 3 PIN	Small Signal Field-Effect Transistor, 0.13A I(D), 50V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92, 3 PIN	Small Signal Field-Effect Transistor, 0.13A I(D), 50V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92, 3 PIN	Small Signal Field-Effect Transistor, 0.13A I(D), 50V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92, 3 PIN	Small Signal Field-Effect Transistor, 0.13A I(D), 50V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92	Small Signal Field-Effect Transistor, 0.13A I(D), 50V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92	Small Signal Field-Effect Transistor, 0.13A I(D), 50V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92	Small Signal Field-Effect Transistor, 0.17A I(D), 50V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
package instruction	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3	SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	50 V	50 V	50 V	50 V	50 V	50 V	50 V	50 V	50 V
Maximum drain current (ID)	0.13 A	0.13 A	0.13 A	0.13 A	0.13 A	0.13 A	0.13 A	0.13 A	0.17 A
Maximum drain-source on-resistance	10 Ω	10 Ω	10 Ω	10 Ω	10 Ω	10 Ω	10 Ω	10 Ω	10 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)	12 pF	12 pF	12 pF	12 pF	12 pF	12 pF	12 pF	12 pF	12 pF
JESD-30 code	O-PBCY-T3	O-PBCY-T3	O-PBCY-T3	O-PBCY-T3	O-PBCY-T3	O-PBCY-T3	O-PBCY-T3	O-PBCY-T3	R-PDSO-G3
Number of components	1	1	1	1	1	1	1	1	1
Number of terminals	3	3	3	3	3	3	3	3	3
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	RECTANGULAR
Package form	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	SMALL OUTLINE
Polarity/channel type	P-CHANNEL	P-CHANNEL	P-CHANNEL	P-CHANNEL	P-CHANNEL	P-CHANNEL	P-CHANNEL	P-CHANNEL	P-CHANNEL
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO	NO	NO	NO	NO	NO	YES
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	GULL WING
Terminal location	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	DUAL
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Maker	Fairchild	Fairchild	-	Fairchild	Fairchild	Fairchild	Fairchild	Fairchild	Fairchild
JEDEC-95 code	TO-92	TO-92	-	-	-	TO-92	TO-92	TO-92	-
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	-

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