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2N3904F

Description
Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TFSM, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size381KB,4 Pages
ManufacturerKEC
Websitehttp://www.keccorp.com/
Download Datasheet Parametric View All

2N3904F Overview

Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TFSM, 3 PIN

2N3904F Parametric

Parameter NameAttribute value
MakerKEC
package instructionSMALL OUTLINE, R-PDSO-F3
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum collector current (IC)0.2 A
Collector-emitter maximum voltage40 V
ConfigurationSINGLE
Minimum DC current gain (hFE)30
JESD-30 codeR-PDSO-F3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeNPN
surface mountYES
Terminal formFLAT
Terminal locationDUAL
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)300 MHz
Maximum off time (toff)250 ns
Maximum opening time (tons)70 ns

2N3904F Preview

SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
2N3904F
EPITAXIAL PLANAR NPN TRANSISTOR
FEATURES
・Low
Leakage Current
: I
CEX
=50nA(Max.)
A
G
E
B
・Low
Saturation Voltage
: V
CE(sat)
=0.3V(Max.) @I
C
=50mA, I
B
=5mA.
・Low
Collector Output Capacitance
C
K
・Excellent
DC Current Gain Linearity.
3
1
: C
ob
=4pF(Max.) @V
CB
=5V.
MAXIMUM RATING (Ta=25℃)
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
RATING
60
40
6
200
50
50
150
-55½150
UNIT
V
V
V
mA
mA
mW
1. EMITTER
2. BASE
3. COLLECTOR
TFSM
Marking
ZC
2011. 10. 28
Revision No : 0
J
D
@V
CE
=30V, V
EB
=3V.
2
DIM
A
B
C
D
E
G
J
K
MILLIMETERS
_
0.6 + 0.05
_
0.8 + 0.05
0.38+0.02/-0.04
_
0.2 + 0.05
_ 0.05
1.0 +
_
0.35+ 0.05
_ 0.05
0.1 +
_
0.15 + 0.05
Type Name
1/4
2N3904F
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC
Collector Cut-off Current
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage *
Emitter-Base Breakdown Voltage
SYMBOL
I
CEX
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
h
FE
(1)
h
FE
(2)
DC Current Gain
*
h
FE
(3)
h
FE
(4)
h
FE
(5)
Collector-Emitter Saturation Voltage
*
V
CE(sat)
1
V
CE(sat)
2
V
BE(sat)
1
V
BE(sat)
2
f
T
C
ob
C
ib
TEST CONDITION
V
CE
=30V, V
EB
=3V
I
C
=10μ I
E
=0
A,
I
C
=1mA, I
B
=0
I
E
=10μ I
C
=0
A,
V
CE
=1V, I
C
=0.1mA
V
CE
=1V, I
C
=1mA
V
CE
=1V, I
C
=10mA
V
CE
=1V, I
C
=50mA
V
CE
=1V, I
C
=100mA
I
C
=10mA, I
B
=1mA
I
C
=50mA, I
B
=5mA
I
C
=10mA, I
B
=1mA
I
C
=50mA, I
B
=5mA
V
CE
=20V, I
C
=10mA, f=100MHz
V
CB
=5V, I
E
=0, f=1MHz
V
BE
=0.5V, I
C
=0, f=1MHz
V
out
V
in
275Ω
MIN.
-
60
40
6.0
40
70
100
60
30
-
-
0.65
-
300
-
-
TYP.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
MAX.
50
-
-
-
-
-
300
-
-
0.2
UNIT
nA
V
V
V
V
0.3
0.85
V
0.95
-
4.0
8.0
MHz
pF
pF
Base-Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
Input Capacitance
*
Delay Time
t
d
10kΩ
C Total< 4pF
-
-
35
300ns
Rise Time
Switching Time
t
r
10.9V
-0.5V
V
CC
=3.0V
0
t
r
,t
f
< 1ns, Du=2%
V
out
-
-
35
nS
V
in
275Ω
Storage Time
t
stg
10kΩ
1N916
or equiv.
C Total< 4pF
-
-
200
Fall Time
t
f
20µs
10.9V
-9.1V
V
CC
=3.0V
0
t
r
,t
f
< 1ns, Du=2%
-
-
50
* Pulse Test : Pulse Width≦300μ Duty Cycle≦2%.
S,
2011. 10. 28
Revision No : 0
2/4
2N3904F
I
C
- V
CE
100
COMMON EMITTER
Ta=25 C
h
FE
- I
C
DC CURRENT GAIN h
FE
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
1k
500
300
Ta=125 C
Ta=25 C
COMMON EMITTER
V
CE
=1V
COLLECTOR CURRENT I
C
(mA)
80
60
100
50
30
Ta=-55 C
40
0.2
20
I
B
=0.1mA
10
0.1
0.3
1
3
10
30
100
300
COLLECTOR CURRENT I
C
(mA)
0
0
1
2
3
4
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
V
CE(sat)
- I
C
COLLECTOR-EMITTER SATURATION
VOLTAGE V
CE(sat)
(V)
1
0.5
0.3
COMMON EMITTER
I
C
/I
B
=10
0.1
0.05
0.03
Ta=125 C
Ta=25 C
Ta=-55 C
0.01
0.1
0.3
1
3
10
30
100
300
COLLECTOR CURRENT I
C
(mA)
I
C
- V
BE
200
COMMON EMITTER
COLLECTOR CURRENT I
C
(mA)
160
V
CE
=1V
V
BE(sat)
- I
C
10
BASE-EMITTER SATURATION
VOLTAGE V
BE(sat)
(V)
5
3
COMMON EMITTER
I
C
/I
E
=10
120
Ta=
125
C
Ta=25
C
Ta=-55
C
80
1
0.5
0.3
Ta=-55 C
40
Ta=25 C
Ta=125 C
0
0
0.4
0.8
1.2
(V)
1.6
BASE-EMITTER VOLTAGE V
BE
0.1
0.1
0.3
1
3
10
30
100
300
COLLECTOR CURRENT I
C
(mA)
2011. 10. 28
Revision No : 0
3/4
2N3904F
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
V
CE
- I
B
1.0
I
C
=1mA
C
ob
- V
CB
, C
ib
- V
EB
50
I
C
=100mA
I
C
=10mA
CAPACITANCE C
ob
(pF)
C
ib
(pF)
0.8
0.6
0.4
0.2
I
C
=30mA
30
f=1MHz
Ta=25 C
10
5
3
C
ib
C
ob
0
0.001
COMMON
EMITTER
Ta=25 C
1
0.5
0.1
0.3
1
3
10
30
0.01
0.1
1
10
BASE CURRENT I
B
(mA)
REVERSE VOLTAGE V
CB
(V)
V
EB
(V)
2011. 10. 28
Revision No : 0
4/4
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