BC858BT216 datasheet, PDF - EEWORLD Datasheet

BC858BT216: DescriptionSmall Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon,; CategoryDiscrete semiconductor The transistor; File Size219KB，7 Pages; ManufacturerROHM Semiconductor; Websitehttps://www.rohm.com/; Environmental Compliance

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BC858BT216 Overview

Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon,

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	ROHM Semiconductor
Reach Compliance Code	compliant
ECCN code	EAR99
Maximum collector current (IC)	0.2 A
Collector-based maximum capacity	5 pF
Collector-emitter maximum voltage	40 V
Configuration	SINGLE
Minimum DC current gain (hFE)	100
JESD-30 code	R-PDSO-G3
JESD-609 code	e1
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	PNP
Certification status	Not Qualified
surface mount	YES
Terminal surface	TIN SILVER COPPER
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	10
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Nominal transition frequency (fT)	250 MHz
VCEsat-Max	0.3 V

	BC858BT216	BC857BT216
Description	Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon,	Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon,
Is it lead-free?	Lead free	Lead free
Is it Rohs certified?	conform to	conform to
Maker	ROHM Semiconductor	ROHM Semiconductor
Reach Compliance Code	compliant	compliant
ECCN code	EAR99	EAR99
Maximum collector current (IC)	0.2 A	0.2 A
Collector-based maximum capacity	5 pF	5 pF
Collector-emitter maximum voltage	40 V	40 V
Configuration	SINGLE	SINGLE
Minimum DC current gain (hFE)	100	100
JESD-30 code	R-PDSO-G3	R-PDSO-G3
JESD-609 code	e1	e1
Number of components	1	1
Number of terminals	3	3
Maximum operating temperature	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260	260
Polarity/channel type	PNP	PNP
Certification status	Not Qualified	Not Qualified
surface mount	YES	YES
Terminal surface	TIN SILVER COPPER	TIN SILVER COPPER
Terminal form	GULL WING	GULL WING
Terminal location	DUAL	DUAL
Maximum time at peak reflow temperature	10	10
transistor applications	AMPLIFIER	AMPLIFIER
Transistor component materials	SILICON	SILICON
Nominal transition frequency (fT)	250 MHz	250 MHz
VCEsat-Max	0.3 V	0.3 V

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