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Datasheet> All Categories > Discrete semiconductor> The transistor> BDV64LEADFREE
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BDV64LEADFREE

Description
Power Bipolar Transistor, 12A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-218, Plastic/Epoxy, 3 Pin
CategoryDiscrete semiconductor    The transistor   
File Size41KB，1 Pages
ManufacturerCentral Semiconductor
Environmental Compliance  
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BDV64LEADFREE Overview

Power Bipolar Transistor, 12A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-218, Plastic/Epoxy, 3 Pin

BDV64LEADFREE Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerCentral Semiconductor
package instructionFLANGE MOUNT, R-PSFM-T3
Reach Compliance Codecompliant
ECCN codeEAR99
Shell connectionCOLLECTOR
Maximum collector current (IC)12 A
Collector-emitter maximum voltage60 V
ConfigurationDARLINGTON
Minimum DC current gain (hFE)1000
JEDEC-95 codeTO-218
JESD-30 codeR-PSFM-T3
JESD-609 codee3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)260
Polarity/channel typePNP
Certification statusNot Qualified
surface mountNO
Terminal surfaceMATTE TIN (315)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperature10
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)60 MHz

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Power Transistors
TO-218 Case* (Continued)
General Purpose Amplifier
TYPE NO.
IC
(A)
NPN
BDV65
BDV65A
BDV65B
BDW83A
BDW83B
BDW83C
TIP33A
TIP33B
TIP33C
TIP35A
TIP35B
TIP35C
TIP140
TIP141
TIP142
TIP3055
PNP
BDV64
BDV64A
BDV64B
BDW84A
BDW84B
BDW84C
TIP34A
TIP34B
TIP34C
TIP36A
TIP36B
TIP36C
TIP145
TIP146
TIP147
TIP2955
12
12
12
15
15
15
10
10
10
25
25
25
10
10
10
15
125
125
125
130
130
130
80
80
80
125
125
125
125
125
125
90
PD
(W)
BVCBO
(V)
MIN
60
80
100
60
80
100
60
80
100
60
80
100
60
80
100
100
BVCEO
(V)
MIN
60
80
100
60
80
100
60
80
100
60
80
100
60
80
100
60
MIN
1,000
1,000
1,000
750
750
750
20
20
20
10
10
10
1,000
1,000
1,000
20
MAX
--
--
--
20,000
20,000
20,000
100
100
100
75
75
75
--
--
--
100
5.0
5.0
5.0
6.0
6.0
6.0
3.0
3.0
3.0
15
15
15
5.0
5.0
5.0
4.0
4.0
4.0
4.0
3.0
3.0
3.0
4.0
4.0
4.0
4.0
4.0
4.0
4.0
4.0
4.0
4.0
hFE
@ IC @ VCE VCE(SAT) @ IC
(A)
(V)
(V)
MAX
2.0
2.0
2.0
2.5
2.5
2.5
1.0
1.0
1.0
1.8
1.8
1.8
3.0
3.0
3.0
1.1
5.0
5.0
5.0
6.0
6.0
6.0
3.0
3.0
3.0
15
15
15
10
10
10
4.0
(A)
fT
(MHz)
**TYP
MIN
60**
60**
60**
--
--
--
3.0
3.0
3.0
3.0
3.0
3.0
--
--
--
3.0
Shaded areas indicate Darlington.
*Devices are also available in TO-247 Case
(isolated mounting hole) on special order.
Top View
Bottom View
TO-247 Case
(6-December 2004)
w w w. c e n t r a l s e m i . c o m

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