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MJE16002DW

Description
5A, 450V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size502KB,65 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Download Datasheet Parametric View All

MJE16002DW Overview

5A, 450V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN

MJE16002DW Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerON Semiconductor
Parts packaging codeTO-220AB
package instructionPLASTIC, TO-220AB, 3 PIN
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
Maximum collector current (IC)5 A
Collector-emitter maximum voltage450 V
ConfigurationSINGLE
Minimum DC current gain (hFE)5
JESD-30 codeR-PSFM-T3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountNO
Terminal surfaceTIN LEAD
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
SWITCHMODE Series
NPN Silicon Power Transistors
These transistors are designed for high–voltage, high–speed switching of inductive
circuits where fall time and RBSOA are critical. They are particularly well–suited for
line–operated switchmode applications.
The MJE16004 is a high–gain version of the MJE16002 and MJH16002 for
applications where drive current is limited.
Typical Applications:
Switching Regulators
High Resolution Deflection Circuits
Inverters
Motor Drives
Fast Switching Speeds
50 ns Inductive Fall Time @ 75
_
C (Typ)
70 ns Crossover Time @ 75
_
C (Typ)
100
_
C Performance Specified for:
Reverse–Biased SOA
Inductive Switching Times
Saturation Voltages
Leakage Currents
Designer's
Data Sheet
MJE16002*
MJE16004*
*Motorola Preferred Device
5.0 AMPERE
NPN SILICON
POWER TRANSISTORS
450 VOLTS
80 WATTS
CASE 221A–06
TO–220AB
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MAXIMUM RATINGS
Rating
Symbol
Value
450
850
6.0
5.0
10
4.0
8.0
Unit
Vdc
Vdc
Vdc
Adc
Adc
Collector–Emitter Voltage
Collector–Emitter Voltage
Emitter–Base Voltage
VCEO(sus)
VCEV
VEB
IC
ICM
IB
IBM
PD
Collector Current — Continuous
— Peak (1)
Base Current — Continuous
— Peak (1)
Total Power Dissipation @ TC = 25
_
C
@ TC = 100
_
C
Derate above TC = 25
_
C
80
32
0.64
Watts
W/
_
C
Operating and Storage Junction Temperature Range
TJ, Tstg
– 65 to + 150
_
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
R
θJC
TL
Max
Unit
Thermal Resistance, Junction to Case
1.56
275
_
C/W
_
C
Lead Temperature for Soldering Purposes: 1/8″ from Case for 5 Seconds
(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle
v
10%.
Designer’s Data for “Worst Case” Conditions
— The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Preferred
devices are Motorola recommended choices for future use and best overall value.
REV 2
3–688
Motorola Bipolar Power Transistor Device Data
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