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MTDE5P10G6

Description
P-Channel Enhancement Mode MOSFET
File Size302KB,9 Pages
ManufacturerCYSTEKEC
Websitehttp://www.cystekec.com/
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MTDE5P10G6 Overview

P-Channel Enhancement Mode MOSFET

CYStech Electronics Corp.
P-Channel Enhancement Mode MOSFET
Spec. No. : C885G6
Issued Date : 2012.11.21
Revised Date :
Page No. : 1/9
MTDE5P10G6
Description
BV
DSS
I
D
R
DSON
@V
GS
=-10V, I
D
=-1.4A
R
DSON
@V
GS
=-6V, I
D
=-1.2A
-100V
-1.4A
460mΩ(typ.)
480mΩ(typ.)
The MTDE5P10G6 is a P-channel enhancement-mode MOSFET, providing the designer with the best
combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.
The TSOP-6 package is universally preferred for all commercial-industrial surface mount applications.
Features
Simple drive requirement
Low on-resistance
Small package outline
Pb-free lead plating package
Equivalent Circuit
MTDE5P10G6
G:Gate S:Source D:Drain
Absolute Maximum Ratings
(Ta=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @V
GS
=-10V, T
A
=25
°C
Pulsed Drain Current
(Note 2, 3)
Total Power Dissipation @ T
A
=25
°C
Linear Derating Factor
Operating Junction and Storage Temperature Range
Thermal Resistance, Junction-to-Ambient
(Note 1)
(Note 1)
Symbol
V
DS
V
GS
I
D
I
D
I
DM
Pd
Tj ; Tstg
Rth,ja
Limits
-100
±20
-1.4
-1.1
-7
1.6
0.013
-55~+150
78
Unit
V
Continuous Drain Current @V
GS
=-10V, T
A
=70
°C
(Note 1)
A
W
W /
°C
°C
°C/W
Note : 1.Surface mounted on 1 in² copper pad of FR-4 board. 156
/W when mounted on minimum copper pad.
2.Pulse width limited by maximum junction temperature.
3.Pulse Width
≤300μs,
Duty Cycle≤2%
MTDE5P10G6
CYStek Product Specification
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