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MT49H64M9HT-25E

Description
DDR DRAM, 64MX9, CMOS, PBGA144, LEAD FREE, FBGA-144
Categorystorage    storage   
File Size3MB,76 Pages
ManufacturerMicron Technology
Websitehttp://www.mdtic.com.tw/
Environmental Compliance  
Download Datasheet Parametric View All

MT49H64M9HT-25E Overview

DDR DRAM, 64MX9, CMOS, PBGA144, LEAD FREE, FBGA-144

MT49H64M9HT-25E Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerMicron Technology
Parts packaging codeBGA
package instructionLEAD FREE, FBGA-144
Contacts144
Reach Compliance Codecompliant
ECCN codeEAR99
access modeMULTI BANK PAGE BURST
Other featuresAUTO REFRESH
JESD-30 codeR-PBGA-B144
JESD-609 codee1
length18.5 mm
memory density603979776 bit
Memory IC TypeDDR DRAM
memory width9
Number of functions1
Number of ports1
Number of terminals144
word count67108864 words
character code64000000
Operating modeSYNCHRONOUS
Maximum operating temperature95 °C
Minimum operating temperature
organize64MX9
Package body materialPLASTIC/EPOXY
encapsulated codeTBGA
Package shapeRECTANGULAR
Package formGRID ARRAY, THIN PROFILE
Peak Reflow Temperature (Celsius)260
Certification statusNot Qualified
Maximum seat height1.2 mm
Maximum supply voltage (Vsup)1.9 V
Minimum supply voltage (Vsup)1.7 V
Nominal supply voltage (Vsup)1.8 V
surface mountYES
technologyCMOS
Temperature levelOTHER
Terminal surfaceTin/Silver/Copper (Sn/Ag/Cu)
Terminal formBALL
Terminal pitch1 mm
Terminal locationBOTTOM
Maximum time at peak reflow temperature30
width11 mm
576Mb: x9, x18, x36 2.5V Vext, 1.8V Vdd, HSTL, CIO, RLDRAM II
Features
CIO
®
RLDRAM
II
MT49H64M9 – 64 Meg x 9 x 8 Banks
MT49H32M18 – 32 Meg x 18 x 8 Banks
MT49H16M36 – 16 Meg x 36 x 8 Banks
Features
• 533 MHz DDR operation (1.067 Gb/s/pin data rate)
• 38.4 Gb/s peak bandwidth (x36 at 533 MHz
clock frequency)
• Organization
64 Meg x 9, 32 Meg x 18, and 16 Meg x 36 I/O
8 banks
• Reduced cycle time (15ns at 533 MHz)
• Nonmultiplexed addresses (address multiplexing
option available)
• SRAM-type interface
• Programmable READ latency (RL), row cycle time,
and burst sequence length
• Balanced READ and WRITE latencies in order to
optimize data bus utilization
• Data mask for WRITE commands
• Differential input clocks (CK, CK#)
• Differential input data clocks (DKx, DKx#)
• On-die DLL generates CK edge-aligned data and
output data clock signals
• Data valid signal (QVLD)
• 32ms refresh (16K refresh for each bank; 128K refresh
command must be issued in total each 32ms)
• 144-ball µBGA package
• HSTL I/O (1.5V or 1.8V nominal)
• 25–60Ω matched impedance outputs
• 2.5V Vext, 1.8V Vdd, 1.5V or 1.8V Vddq I/O
• On-die termination (ODT) Rtt
Options
• Clock cycle timing
1.875ns @
t
RC = 15ns
2.5ns @
t
RC = 15ns
2.5ns @
t
RC = 20ns
3.3ns @ RC = 20ns
• Configuration
64 Meg x 9
32 Meg x 18
16 Meg x 36
• Operating temperature
Commercial (0° to +95°C)
Industrial (T
C
= –40°C to +95°C;
T
A
= –40°C to +85°C)
• Package
144-ball µBGA
144-ball µBGA (Pb-free)
144-ball FBGA
144-ball FBGA (Pb-free)
• Revision
t
Marking
-18
-25E
-25
-33
64M9
32M18
16M36
None
IT
FM
BM
HU
1
HT
1
:A
Notes: 1. The FBGA package is being phased out.
PDF: 09005aef80fe62fb/Source: 09005aef809f284b
576Mb_RLDRAM_II_CIO_D1.fm - Rev. H 6/09 EN
1
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2004 Micron Technology, Inc. All rights reserved.
Products and specifications discussed herein are subject to change by Micron without notice.

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