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ZTX601

Description
Small Signal Bipolar Transistor, 1A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, TO-92 COMPATIBLE, E-LINE PACKAGE-3
CategoryDiscrete semiconductor    The transistor   
File Size95KB,3 Pages
ManufacturerDiodes Incorporated
Environmental Compliance  
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ZTX601 Overview

Small Signal Bipolar Transistor, 1A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, TO-92 COMPATIBLE, E-LINE PACKAGE-3

ZTX601 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerDiodes Incorporated
Parts packaging codeTO-92
package instructionIN-LINE, R-PSIP-W3
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
Factory Lead Time15 weeks
Maximum collector current (IC)1 A
Collector-emitter maximum voltage160 V
ConfigurationDARLINGTON
Minimum DC current gain (hFE)1000
JESD-30 codeR-PSIP-W3
JESD-609 codee3
Number of components1
Number of terminals3
Maximum operating temperature200 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeNPN
Maximum power dissipation(Abs)1 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceMatte Tin (Sn)
Terminal formWIRE
Terminal locationSINGLE
Maximum time at peak reflow temperature40
Transistor component materialsSILICON
Nominal transition frequency (fT)250 MHz

ZTX601 Preview

NPN SILICON PLANAR MEDIUM POWER
DARLINGTON TRANSISTORS
ISSUE 2 – JUNE 94
FEATURES
* 160 Volt V
CEO
* 1 Amp continuous current
* Gain of 5K at I
C
=1 Amp
* P
tot
= 1 Watt
ZTX600
ZTX601
C
B
E
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation
at T
amb
=25°C
derate above 25°C
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
P
tot
T
j
:T
stg
ZTX600
160
140
10
4
1
1
5.7
E-Line
TO92 Compatible
ZTX601
180
160
UNIT
V
V
V
A
A
W
mW/ °C
°C
Operating and Storage Temperature Range
-55 to +200
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
SYMBOL
160
140
10
0.01
10
I
EBO
I
CES
V
CE(sat)
V
BE(sat)
V
BE(on)
0.75
0.85
1.7
1.5
0.1
10
1.1
1.2
1.9
1.7
3-206
0.75
0.85
1.7
1.5
ZTX600
MIN. TYP.
Collector-Base
V
(BR)CBO
Breakdown Voltage
Collector-Emitter
V
(BR)CEO
Breakdown Voltage
Emitter-Base
V
(BR)EBO
Breakdown Voltage
Collector Cut-Off
Current
I
CBO
180
160
10
ZTX601
MAX. MIN. TYP.
MAX.
V
V
V
µ
A
µ
A
µ
A
µ
A
µ
A
µ
A
µ
A
UNIT CONDITIONS.
I
C
=100
µ
A
I
C
=10mA*
I
E
=100
µ
A
V
CB
=140V
V
CB
=160V
V
CB
=140V,
T
=
=100°C
V
CB
=160V,
T
=
=100°C
V
EB
=8V
V
CES
=140V
V
CES
=160V
I
C
=0.5A, I
B
=5mA*
I
C
=1A, I
B
=10mA*
I
C
=1A, I
B
=10mA*
IC=1A, V
CE
=5V*
0.01
10
0.1
Emitter Cut-Off
Current
Colllector-Emitter
Cut-Off Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base-Emitter
Turn-On Voltage
10
1.1
1.2
1.9
1.7
V
V
V
V
ZTX600
ZTX601
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
SYMBOL
h
FE
ZTX600
ZTX601
MIN. TYP.
Static Forward
Current Transfer
Ratio
Group A
Group B
Transition
Frequency
Input Capacitance
Output
Capacitance
Switching Times
f
T
C
ibo
C
obo
t
on
t
off
R
5
= 50KΩ
UNIT CONDITIONS.
I
C
=50mA, V
CE
=10V*
I
C
=0.5A, V
CE
=10V*
I
C
=1A, V
CE
=10V*
I
C
=50mA, V
CE
=10V*
I
C
=0.5A, V
CE
=10V*
I
C
=1A, V
CE
=10V*
I
C
=50mA, V
CE
=10V*
I
C
=0.5A, V
CE
=10V*
I
C
=1A, V
CE
=10V*
MHz
I
C
=100mA,
V
CE
=10V f=20MHz
V
EB
=0.5V, f=1MHz
V
CE
=10V, f=1MHz
I
C
=0.5A, V
CE
=10V
I
B1
=I
B2
=0.5mA
MAX. MIN. TYP.
1K
100K 2K
1K
MAX.
100K
1K
2K
1K
1K
2K
1K
5K
10K
5K
150
2K
5K
3K
10K
20K
10K
250
60
10
0.75
2.2
20K
1K
2K
1K
2K
5K
3K
10K
20K
10K
250
60
10
0.75
2.2
20K
100K
5K
100K 10K
5K
150
90
15
90
15
pF
pF
µ
s
µ
s
*Measured under pulsed conditions. Pulse width=300
µ
s. Duty cycle
2%
Maximum Power Dissipation (W)
1.0
R
5
= 5KΩ
0.8 R
5
= 1MΩ
R
5
=
0.6
0.4
0.2
0
1
10
100
200
DC Conditions
V
CE
- Collector-Emitter Voltage (Volts)
Voltage Derating Graph
The maximum permissible operational temperature can be obtained from this graph using the
following equation
T
amb
(
max
)
=
Power
(max ) −
Power
(
act)
0.0057
+25°
C
T
amb(max)
= Maximum operating ambient temperature
Power(max) = Maximum power dissipation figure, obtained from the above graph for a given V
CE
and source resistance (R
S
)
Power(actual)= Actual power dissipation in users circuit
3-207
ZTX600
ZTX601
TYPICAL CHARACTERISTICS
20k
1.00
16k
Group B
V
CE
=10V
V
CE(sat)
- (Volts)
I
C
/I
B
=100
0.80
h
FE
- Gain
0.90
12k
8k
Group A
0.70
4k
0.60
0
0.01
0.1
1
10
0.001
0.01
0.1
1
10
I
C
-
Collector Current (Amps)
I
C
-
Collector Current (Amps)
V
CE(sat)
v I
C
h
FE
v I
C
1.8
1.5
V
BE(sat)
- (Volts)
V
BE
- (Volts)
1.6
1.4
V
CE
=5V
1.3
1.4
I
C
/I
B
=100
1.2
1.2
1.0
0.01
0.1
1
10
1.1
0.01
0.1
1
10
I
C
-
Collector Current (Amps)
I
C
-
Collector Current (Amps)
V
BE(sat)
v I
C
Single Pulse Test at T
amb
=25°C
10
ZTX600
V
BE(on)
v I
C
ZTX601
I
C
- Collector Current (Amps)
1
0.1
D.C.
1s
100ms
10ms
1.0ms
0.1ms
0.01
0.001
1
10
100
1000
V
CE
-
Collector Voltage (Volts)
Safe Operating Area
3-208

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Description Small Signal Bipolar Transistor, 1A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, TO-92 COMPATIBLE, E-LINE PACKAGE-3 Small Signal Bipolar Transistor, 1A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, TO-92 COMPATIBLE, E-LINE PACKAGE-3 Small Signal Bipolar Transistor, 1A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, TO-92 COMPATIBLE, E-LINE PACKAGE-3 Small Signal Bipolar Transistor, 1A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, TO-92 COMPATIBLE, E-LINE PACKAGE-3
Maker Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated
Parts packaging code TO-92 TO-92 TO-92 TO-92
package instruction IN-LINE, R-PSIP-W3 IN-LINE, R-PSIP-W3 TO-92 COMPATIBLE, E-LINE PACKAGE-3 TO-92 COMPATIBLE, E-LINE PACKAGE-3
Contacts 3 3 3 3
Reach Compliance Code compliant compliant compliant unknown
ECCN code EAR99 EAR99 EAR99 EAR99
Maximum collector current (IC) 1 A 1 A 1 A 1 A
Collector-emitter maximum voltage 160 V 160 V 160 V 160 V
Configuration DARLINGTON DARLINGTON DARLINGTON DARLINGTON
Minimum DC current gain (hFE) 1000 5000 5000 1000
JESD-30 code R-PSIP-W3 R-PSIP-W3 R-PSIP-W3 R-PSIP-W3
JESD-609 code e3 e3 e3 e3
Number of components 1 1 1 1
Number of terminals 3 3 3 3
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form IN-LINE IN-LINE IN-LINE IN-LINE
Peak Reflow Temperature (Celsius) 260 260 260 260
Polarity/channel type NPN NPN NPN NPN
Certification status Not Qualified Not Qualified Not Qualified Not Qualified
surface mount NO NO NO NO
Terminal surface Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn) MATTE TIN
Terminal form WIRE WIRE WIRE WIRE
Terminal location SINGLE SINGLE SINGLE SINGLE
Maximum time at peak reflow temperature 40 40 40 40
Transistor component materials SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) 250 MHz 150 MHz 250 MHz 150 MHz
Is it Rohs certified? conform to conform to conform to -
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