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Datasheet> All Categories > Discrete semiconductor> The transistor> FMMT2907
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FMMT2907

Description
Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size41KB，2 Pages
ManufacturerDiodes Incorporated
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FMMT2907 Overview

Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23, 3 PIN

FMMT2907 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerDiodes Incorporated
Parts packaging codeSOT-23
package instructionSMALL OUTLINE, R-PDSO-G3
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
Maximum collector current (IC)0.6 A
Collector-emitter maximum voltage40 V
ConfigurationSINGLE
Minimum DC current gain (hFE)75
JESD-30 codeR-PDSO-G3
Humidity sensitivity level1
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)225
Polarity/channel typePNP
Maximum power dissipation(Abs)0.33 W
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)200 MHz
Maximum off time (toff)110 ns
Maximum opening time (tons)50 ns

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Download Datasheet
SOT23 PNP SILICON PLANAR
SWITCHING TRANSISTOR
ISSUE 3 – FEBRUARY 1996
7
FEATURES
* Fast switching
COMPLIMENTARY TYPES - FMMT2907 –
- FMMT2907A –
PARTMARKING DETAIL -
FMMT2907 –
FMMT2907A –
FMMT2907R –
FMMT2907AR –
FMMT2907
FMMT2907A
FMMT2222
FMMT2222A
2BZ
2F
4P
5P
FMMT2907
-40
-5
-600
330
-55 to +150
C
B
SOT23
E
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
j
:T
stg
FMMT2907A
-60
-60
UNIT
V
V
V
mA
mW
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
SYMBOL
FMMT2907
FMMT2907A UNIT CONDITIONS.
MAX.
V
V
V
-50
-10
-10
-50
-0.4
-1.6
-1.3
-2.6
75
100
100
100
50
200
nA
µ
A
MIN.
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector-Emitter
Cut-Off Current
Collector Cut-Off
Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Static Forward
Current Transfer
Ratio
Transition
Frequency
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CEX
I
CBO
-40
-60
-5
MAX. MIN.
-60
-60
-5
-50
-20
-20
-50
-0.4
-1.6
-1.3
-2.6
I
C
=-10
µ
A, I
E
=0
I
C
=-10mA, I
B
=0*
I
E
=-10
µ
A, I
C
=0
V
CE
=-30V, V
BE
=-0.5V
V
CB
=-50V, I
E
=0
V
CB
=-50V, I
E
=0, T
amb
=150°C
V
CE
=-30V, V
BE
=-0.5V
I
C
=-150mA, I
B
=-15mA*
I
C
=-500mA, I
B
=-50mA*
I
C
=-150mA, I
B
=-15mA*
I
C
=-500mA, I
B
=-50mA*
I
C
=-0.1mA, V
CE
=-10V
I
C
=-1mA, V
CE
=-10V
I
C
=-10mA, V
CE
=-10V
I
C
=-150mA, V
CE
=-10V*
I
C
=-500mA, V
CE
=-10V*
nA
nA
V
V
V
V
Base Cut-Off Current I
B
V
CE(sat)
V
BE(sat)
h
FE
35
50
75
100
30
200
300
300
MHz
f
T
I
C
=-50mA, V
CE
=-20V
f=100MHz
*Measured under pulsed conditions. Pulse width=300
µ
s. Duty cycle
≤
2%
PAGE NUMBER

FMMT2907 Related Products

FMMT2907 FMMT2907AR FMMT2907A
Description Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23, 3 PIN Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23, 3 PIN Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23, 3 PIN
Is it Rohs certified? incompatible incompatible incompatible
Maker Diodes Incorporated Diodes Incorporated Diodes Incorporated
Parts packaging code SOT-23 SOT-23 SOT-23
package instruction SMALL OUTLINE, R-PDSO-G3 SOT-23, 3 PIN SOT-23, 3 PIN
Contacts 3 3 3
Reach Compliance Code compliant unknown unknown
ECCN code EAR99 EAR99 EAR99
Maximum collector current (IC) 0.6 A 0.6 A 0.6 A
Collector-emitter maximum voltage 40 V 60 V 60 V
Configuration SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 75 100 100
JESD-30 code R-PDSO-G3 R-PDSO-G3 R-PDSO-G3
Humidity sensitivity level 1 1 1
Number of components 1 1 1
Number of terminals 3 3 3
Maximum operating temperature 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) 225 NOT SPECIFIED NOT SPECIFIED
Polarity/channel type PNP PNP PNP
Maximum power dissipation(Abs) 0.33 W 0.33 W 0.33 W
Certification status Not Qualified Not Qualified Not Qualified
surface mount YES YES YES
Terminal form GULL WING GULL WING GULL WING
Terminal location DUAL DUAL DUAL
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
transistor applications SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON
Nominal transition frequency (fT) 200 MHz 200 MHz 200 MHz
Maximum off time (toff) 110 ns 110 ns 110 ns
Maximum opening time (tons) 50 ns 50 ns 50 ns

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