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FB20R06YE3B1BOMA1

Description
Insulated Gate Bipolar Transistor, 27A I(C), 600V V(BR)CES, N-Channel
CategoryDiscrete semiconductor    The transistor   
File Size440KB,11 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Download Datasheet Parametric View All

FB20R06YE3B1BOMA1 Overview

Insulated Gate Bipolar Transistor, 27A I(C), 600V V(BR)CES, N-Channel

FB20R06YE3B1BOMA1 Parametric

Parameter NameAttribute value
MakerInfineon
package instructionFLANGE MOUNT, R-XUFM-X26
Reach Compliance Codeunknown
Factory Lead Time1 week
Shell connectionISOLATED
Maximum collector current (IC)27 A
Collector-emitter maximum voltage600 V
ConfigurationCOMPLEX
JESD-30 codeR-XUFM-X26
Number of components7
Number of terminals26
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeN-CHANNEL
surface mountNO
Terminal formUNSPECIFIED
Terminal locationUPPER
Transistor component materialsSILICON
Nominal off time (toff)190 ns
Nominal on time (ton)33 ns

FB20R06YE3B1BOMA1 Preview

Technische Information / technical information
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IGBT-modules
FB20R06YE3_B1
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Technische Information / technical information
IGBT-Module
IGBT-modules
FB20R06YE3_B1
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Diode-Wechselrichter / diode-inverter
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Technische Information / technical information
IGBT-Module
IGBT-modules
FB20R06YE3_B1
'() * +,-
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IGBT-Brems-Chopper / IGBT-brake-chopper
Höchstzulässige Werte / maximum rated values
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Technische Information / technical information
IGBT-Module
IGBT-modules
FB20R06YE3_B1
'() * +,-
Diode-Brems-Chopper / Diode-brake-chopper
Höchstzulässige Werte / maximum rated values
:
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preliminary data
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Specification according to the valid application note.
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Technische Information / technical information
IGBT-Module
IGBT-modules
FB20R06YE3_B1
N %2 * + Q 2 * 3 $ "
Modul / module
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preliminary data
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Der Strom im Dauerbetrieb ist auf 25 A effektiv pro Anschlusspin begrenzt.
The current under continuous operation is limited to 25 A rms per connector pin.
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5
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