FDT458P
June 2001
FDT458P
30V P-Channel PowerTrench
®
MOSFET
General Description
This P-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers, and battery chargers.
These MOSFETs feature faster switching and lower
gate charge than other MOSFETs with comparable
R
DS(ON)
specifications.
Features
•
3.4 A, –30 V. R
DS(ON)
= 130 mΩ @ V
GS
= 10 V
R
DS(ON)
= 200 mΩ @ V
GS
= 4.5 V
•
Fast switching speed
•
Low gate charge (2.5 nC typical)
•
High performance trench technology for extremely
low R
DS(ON)
•
High power and current handling capability in a
widely used surface mount package
Applications
•
Battery chargers
•
Motor drives
D
D
D
D
S
D
SOT-223
G
S
G
D
S
SOT-223
*
(J23Z)
G
G
S
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
Drain-Source Voltage
Gate-Source Voltage
Drain Current
– Continuous
– Pulsed
Maximum Power Dissipation
T
A
=25
o
C unless otherwise noted
Parameter
Ratings
– 30
±20
(Note 1a)
Units
V
V
A
W
3.4
10
3.0
1.3
1.1
–55 to +150
(Note 1a)
(Note 1b)
(Note 1c)
T
J
, T
STG
Operating and Storage Junction Temperature Range
°C
Thermal Characteristics
R
θJA
R
θJ
C
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
42
12
°C/W
°C/W
Package Marking and Ordering Information
Device Marking
458P
Device
FDT458P
Reel Size
13’’
Tape width
12mm
Quantity
2500 units
©2001
Fairchild Semiconductor Corporation
FDT458P Rev. B(W)
FDT458P
Electrical Characteristics
Symbol
BV
DSS
∆BV
DSS
∆T
J
I
DSS
I
GSSF
I
GSSR
T
A
= 25°C unless otherwise noted
Parameter
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
(Note 2)
Test Conditions
V
GS
= 0 V, I
D
= –250
µA
I
D
= –250
µA,
Referenced to 25°C
V
DS
= –24 V, V
GS
= 0 V
V
GS
= –25 V,
V
DS
= 0 V
V
GS
= –25 V, V
DS
= 0 V
V
DS
= V
GS
, I
D
= –250
µA
I
D
= –250
µA,
Referenced to 25°C
V
GS
= –10 V,
I
D
= –3.4 A
V
GS
= –4.5 V, I
D
= –2.7 A
V
GS
=–10 V, I
D
=–3.4 A, T
J
=125°C
V
GS
= –10 V,
V
DS
= –5 V
V
DS
= –5 V,
I
D
= –3.4 A
Min
–30
Typ
Max Units
V
Off Characteristics
–23
–1
100
–100
mV/°C
µA
nA
nA
On Characteristics
V
GS(th)
∆V
GS(th)
∆T
J
R
DS(on)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
On–State Drain Current
Forward Transconductance
–1
–1.8
4
105
157
147
–3
V
mV/°C
130
200
210
mΩ
I
D(on)
g
FS
–5
3
A
S
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(Note 2)
V
DS
= –15 V,
f = 1.0 MHz
V
GS
= 0 V,
205
55
26
pF
pF
pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
V
DD
= –15 V,
V
GS
= –10 V,
I
D
= –1 A,
R
GEN
= 6
Ω
4.5
12.5
11
2
9
23
20
4
3.5
ns
ns
ns
ns
nC
nC
nC
V
DS
= –15 V,
V
GS
= –10 V
I
D
= –3.4 A,
2.5
0.7
1
Drain–Source Diode Characteristics and Maximum Ratings
I
S
V
SD
Notes:
1.
R
θJA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R
θJC
is guaranteed by design while R
θCA
is determined by the user's board design.
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
V
GS
= 0 V, I
S
= –2.5 A
Voltage
–2.5
(Note 2)
A
V
–0.8
–1.2
a) 42°C/W when
2
mounted on a 1in
pad of 2 oz copper
b) 95°C/W when
mounted on a .0066
in
2
pad of 2 oz
copper
c) 110°C/W when mounted on a
minimum pad.
2.
Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
FDT458P Rev. B(W)
FDT458P
Typical Characteristics
10
2
V
GS
= -10V
R
DS(ON)
NORMALIZED
,
DRAIN-SOURCE ON-RESISTANCE
-6.0V -5.0V
V
1.8
V
GS
=-4.5V
1.6
-5.0V
1.4
-6.0V
1.2
1
-7.0V
-8.0V
-10V
-I
D
, DRAIN CURRENT (A)
8
-4.5V
6
-4.0V
4
-3.5V
2
-3.0V
0
0
1
2
3
4
5
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
0.8
0
2
4
6
8
10
-I
D
, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.55
R
DS(ON)
ON-RESISTANCE (OHM)
,
1.7
R
DS(ON)
NORMALIZED
,
DRAIN-SOURCE ON-RESISTANCE
I
D
= -3.4A
V
GS
= -10V
1.5
I
D
= -1.7A
0.45
1.3
0.35
T
A
= 125
o
C
0.25
T
A
= 25
o
C
0.15
1.1
0.9
0.7
-50
-25
0
25
50
75
100
125
150
175
T
J
, JUNCTION TEMPERATURE (
o
C)
0.05
2
4
6
8
10
-V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with
Temperature.
5
-I
S
, REVERSE DRAIN CURRENT (A)
V
DS
= -5V
4
-I
D
, DRAIN CURRENT (A)
T
A
= -55 C
o
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
10
25
o
C
125
o
C
V
GS
=0V
1
T
A
= 125
o
C
25
o
C
0.1
-55
o
C
0.01
3
2
1
0.001
0
1.5
2
2.5
3
3.5
4
-V
GS
, GATE TO SOURCE VOLTAGE (V)
0.0001
0
0.2
0.4
0.6
0.8
1
1.2
1.4
-V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDT458P Rev. B(W)
FDT458P
Typical Characteristics
10
-V
GS
, GATE-SOURCE VOLTAGE (V)
I
D
= -3.4A
8
-15V
CAPACITANCE (pF)
V
DS
= -5V
-10V
300
f = 1 MHz
V
GS
= 0 V
250
C
ISS
200
6
150
C
OSS
100
4
2
50
0
0
1
2
3
4
5
Q
g
, GATE CHARGE (nC)
C
RSS
0
0
5
10
15
20
25
30
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
100
Figure 8. Capacitance Characteristics.
200
SINGLE PULSE
R
θJ
A
= 110
o
C / W
T
A
= 25
o
C
POWER (W)
100
120
-I
D
, DRAIN CURRENT (A)
10
100µ s
R
DS(ON)
LIMIT
1m
10ms
100ms
1s
10s
V
GS
= -10V
SINGLE PULSE
R
θJA
= 110
o
C/W
T
A
= 25
o
C
DC
160
1
80
0.1
40
0.01
0.1
1
10
-V
D S
DRAIN-SOURCE VOLTAGE (V)
,
0
0.0001
0.001
0.01
0.1
1
10
100
1000
SINGLE PULSE TIME (SEC)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
1
r(t), NORMALIZED EFFECTIVE TRANSIENT
THERMAL RESISTANCE
D = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
R
θ
JA
(t) = r(t) + R
θ
JA
R
θ
JA
= 110 °C/W
P(pk)
t
1
t
2
T
J
- T
A
= P * R
θ
JA
(t)
Duty Cycle, D = t
1
/ t
2
Single Pulse
0.001
0.001
0.01
0.1
1
t
1
, TIME (sec)
10
100
1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FDT458P Rev. B(W)
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
DenseTrench™
DOME™
EcoSPARK™
E
2
CMOS
TM
EnSigna
TM
FACT™
FACT Quiet Series™
DISCLAIMER
FAST
FASTr™
FRFET™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MICROWIRE™
OPTOLOGIC™
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerTrench
QFET™
QS™
QT Optoelectronics™
Quiet Series™
SILENT SWITCHER
SMART START™
STAR*POWER™
Stealth™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
TruTranslation™
UHC™
UltraFET
VCX™
STAR*POWER is used under license
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
2. A critical component is any component of a life
1. Life support devices or systems are devices or
support device or system whose failure to perform can
systems which, (a) are intended for surgical implant into
be reasonably expected to cause the failure of the life
the body, or (b) support or sustain life, or (c) whose
support device or system, or to affect its safety or
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or
In Design
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. H3
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