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Datasheet> All Categories > Discrete semiconductor> The transistor> SIHB16N50CTL-E3
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SIHB16N50CTL-E3

Description
TRANSISTOR 16 A, 500 V, 0.38 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3, FET General Purpose Power
CategoryDiscrete semiconductor    The transistor   
File Size176KB，9 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
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SIHB16N50CTL-E3 Overview

TRANSISTOR 16 A, 500 V, 0.38 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3, FET General Purpose Power

SIHB16N50CTL-E3 Parametric

Parameter NameAttribute value
MakerVishay
Parts packaging codeD2PAK
package instructionSMALL OUTLINE, R-PSSO-G2
Contacts4
Reach Compliance Codeunknown
Avalanche Energy Efficiency Rating (Eas)320 mJ
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage500 V
Maximum drain current (Abs) (ID)16 A
Maximum drain current (ID)16 A
Maximum drain-source on-resistance0.38 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-263AB
JESD-30 codeR-PSSO-G2
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)250 W
Maximum pulsed drain current (IDM)40 A
surface mountYES
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON

SIHB16N50CTL-E3 Preview

SiHP16N50C, SiHB16N50C, SiHF16N50C
www.vishay.com
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
V
DS
(V) at T
J
max.
R
DS(on)
()
Q
g
(Max.) (nC)
Q
gs
(nC)
Q
gd
(nC)
Configuration
TO-220AB
TO-220 FULLPAK
FEATURES
560
V
GS
= 10 V
68
17.6
21.8
Single
D
• Low Figure-of-Merit R
on
x Q
g
0.38
• 100 % Avalanche Tested
• Gate Charge Improved
• T
rr
/Q
rr
Improved
• Compliant to RoHS Directive 2002/95/EC
Note
*
Pb containing terminations are not RoHS compliant, exemptions
may apply
G
D
S
G
D
S
D
2
PAK
(TO-263)
G
S
G
D
S
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
TO-220AB
SiHP16N50C-E3
-
-
D
2
PAK (TO-263)
SiHB16N50C-E3
SiHB16N50CTR-E3
SiHB16N50CTL-E3
TO-220 FULLPAK
SiHF16N50C-E3
-
-
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150 °C)
a
Pulsed Drain Current
c
Linear Derating Factor
Single Pulse Avalanche Energy
b
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
d
for 10 s
TO220-AB, D
2
PAK (TO-263)
TO-220 FULLPAK
E
AS
P
D
T
J
, T
stg
V
GS
at 10 V
T
C
= 25 °C
T
C
= 100 °C
SYMBOL
V
DS
V
GS
I
D
I
DM
LIMIT
500
± 30
16
10
40
2
320
250
38
- 55 to + 150
300
°C
W/°C
mJ
W
A
UNIT
V
Notes
a. Limited by maximum junction temperature.
b. V
DD
= 50 V, starting T
J
= 25 °C, L = 2.5 mH, R
g
= 25
,
I
AS
= 16 A.
c. Repetitive rating; pulse width limited by maximum junction temperature.
d. 1.6 mm from case.
S11-1116-Rev. B, 13-Jun-11
1
Document Number: 91401
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiHP16N50C, SiHB16N50C, SiHF16N50C
www.vishay.com
Vishay Siliconix
SYMBOL
R
thJA
R
thJC
R
thJA
TO220-AB D
2
PAK (TO-263)
62
0.5
40
TO-220 FULLPAK
65
3.3
-
°C/W
UNIT
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
Junction-to-Ambient (PCB mount)
a
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
Gate-Source Threshold Voltage (N)
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward
Transconductance
a
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Gate Input Resistance
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Body Diode Reverse Recovery Current
I
S
I
SM
V
SD
t
rr
Q
rr
I
RRM
MOSFET symbol
showing the
integral reverse
p - n junction diode
D
SYMBOL
V
DS
V
DS
/T
J
V
GS(th)
I
GSS
I
DSS
R
DS(on)
g
fs
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
R
g
TEST CONDITIONS
V
GS
= 0 V, I
D
= 250 μA
Reference to 25 °C, I
D
= 1 mA
V
DS
= V
GS
, I
D
= 250 μA
V
GS
= ± 30 V
V
DS
= 500 V, V
GS
= 0 V
V
DS
= 400 V, V
GS
= 0 V, T
J
= 125 °C
V
GS
= 10 V
I
D
= 8 A
V
DS
= 50 V, I
D
= 3 A
MIN.
500
-
3.0
-
-
-
-
-
-
-
-
-
TYP.
-
0.6
-
-
-
-
0.31
3
1900
230
24
45
18
22
27
156
29
31
1.6
MAX.
-
-
5.0
± 100
50
250
0.38
-
-
-
-
68
-
-
-
-
-
-
-
UNIT
V
V/°C
V
nA
μA
S
V
GS
= 0 V,
V
DS
= 25 V,
f = 1.0 MHz
pF
V
GS
= 10 V
I
D
= 16 A, V
DS
= 400 V
-
-
-
nC
V
DD
= 250 V, I
D
= 16 A,
R
g
= 9.1 V
GS
= 10 V
f = 1 MHz, open drain
-
-
-
-
ns
-
-
-
-
-
-
-
-
-
555
5.5
18
16
A
30
1.8
-
-
-
V
ns
μC
A
G
S
T
J
= 25 °C, I
S
= 10 A, V
GS
= 0 V
T
J
= 25 °C, I
F
= I
S
, dI/dt = 100 A/μs,
V
R
= 20 V
Note
• The information shown here is a preliminary product proposal, not a commercial product data sheet. Vishay Siliconix is not committed to
produce this or any similar product. This information should not be used for design purposes, nor construed as an offer to furnish or sell
such products.
S11-1116-Rev. B, 13-Jun-11
2
Document Number: 91401
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiHP16N50C, SiHB16N50C, SiHF16N50C
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
Vishay Siliconix
50
V
GS
45
15 V
14 V
13 V
12 V
11 V
10 V
9.0 V
8.0 V
7.0 V
6.0 V
BOTTOM 5.0 V
TOP
I
D
, Drain-to-Source Current (A)
40
35
30
25
20
15
10
5
0
0
T
J
= 25 °C
I
D
, Drain-to-Source Current (A)
45
40
35
30
25
20
15
10
5
0
0
2
4
6
8
T
J
= 150 °C
T
J
= 25 °C
7.0 V
5
10
15
20
25
30
10
12
14
16
18
20
V
DS
, Drain-to-Source Voltage (V)
Fig. 1 - Typical Output Characteristics (TO-220)
V
GS
, Gate-to-Source Voltage (V)
Fig.
3
- Typical Transfer Characteristics
R
DS(on)
, Drain-to-Source On-Resistance
(Normalized)
30
V
GS
15 V
14 V
13 V
12 V
11 V
10 V
9.0 V
8.0 V
7.0 V
6.0 V
BOTTOM 5.0 V
TOP
3
I
D
= 16 A
2.5
2
1.5
1
0.5
V
GS
= 10 V
0
- 60 - 40 - 20
0
20 40 60 80 100 120 140 160
I
D
, Drain-to-Source Current (A)
T
J
= 150 °C
25
20
15
10
5
0
0
7.0 V
5
10
15
20
25
30
V
DS
, Drain-to-Source Voltage (V)
Fig. 2 - Typical Output Characteristics (TO-220)
T
J
, Junction Temperature (°C)
Fig. 4 - Normalized On-Resistance vs. Temperature
S11-1116-Rev. B, 13-Jun-11
3
Document Number: 91401
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiHP16N50C, SiHB16N50C, SiHF16N50C
www.vishay.com
Vishay Siliconix
100
2800
2400
2000
C
iss
1600
1200
C
oss
800
400
C
rss
0
1
10
100
1000
I
SD
, Reverse Drain Current (A)
C, Capacitance (pF)
V
GS
= 0 V, f = 1MHz
C
iss
= C
gs
+C
gd
C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
10
T
J
= 150 °C
T
J
= 25 °C
1
V
GS
= 0 V
0.1
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
V
DS
, Drain-to-Source Voltage (V)
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
V
SD
, Source-to-Drain Voltage (V)
Fig. 7 - Typical Source-Drain Diode Forward Voltage
24
V
GS
, Gate-to-Source Voltage (V)
20
16
12
8
4
0
0
20
40
I
D
, Drain-to-Source Current (A)
I
D
= 16 A
V
DS
= 400 V
V
DS
= 250 V
V
DS
= 100 V
100
OPERATION IN THIS AREA
LIMITED BY R
DS(on)
10
100 µs
1
TT
C
==25 °C
T
CC
= 25 °C
T
C
= 25 °C
25 °C
150 °C
TT
J
==150 °C
T
J J
= 150 °C
T
J
= 150 °C
Single Pulse
Single Pulse
Single Pulse
Single Pulse
0.1
10
100
1 ms
10 ms
60
80
1000
Q
G
, Total Gate Charge (nC)
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
V
DS
, Drain-to-Source Voltage (V)
Fig. 8 - Maximum Safe Operating Area (TO-220AB, D
2
PAK)
100
OPERATION IN THIS AREA
LIMITED BY R
DS(on)
I
D
, Drain-to-Source Current (A)
10
100 µs
1
T
C
= 25 °C
T
J
= 150 °C
Single Pulse
0.1
10
100
1 ms
10 ms
1000
V
DS
, Drain-to-Source Voltage (V)
Fig. 9 - Maximum Safe Operating Area (TO-220 FULLPAK)
S11-1116-Rev. B, 13-Jun-11
4
Document Number: 91401
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiHP16N50C, SiHB16N50C, SiHF16N50C
www.vishay.com
Vishay Siliconix
R
D
V
DS
V
GS
R
G
V
DS
90 %
D.U.T.
+
-
V
DD
10 V
Pulse width
≤
1 µs
Duty factor
≤
0.1 %
10 %
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig. 10a - Switching Time Test Circuit
Fig. 10b - Switching Time Waveforms
1
0.5
Thermal Response (Z
thJC
)
0.2
0.1
0.1
0.05
0.02
P
DM
t
1
t
2
Single Pulse
(Thermal Response)
0.01
10
-4
10
-3
10
-2
Notes:
1. Duty Factor, D = t
1
/t
2
2. Peak T
j
= P
DM
x Z
thJC
+ T
C
0.1
1
t
1
, Rectangular Pulse Duration (s)
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case (TO-220AB, D
2
PAK)
1
0.5
Thermal Response (Z
thJC
)
0.2
0.1
0.1
0.05
0.02
t
1
t
2
Single Pulse
(Thermal Response)
10
-4
10
-3
10
-2
0.1
Notes:
1. Duty Factor, D = t
1
/t
2
2. Peak T
j
= P
DM
x Z
thJC
+ T
C
1
10
P
DM
0.01
t
1
, Rectangular Pulse Duration (s)
Fig. 12 - Maximum Effective Transient Thermal Impedance, Junction-to-Case (TO-220 FULLPAK)
S11-1116-Rev. B, 13-Jun-11
5
Document Number: 91401
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
More (Only the first 5 pages are displayed. Please Download Datasheet to view the full content.) >

SIHB16N50CTL-E3 Related Products

SIHB16N50CTL-E3 SIHB16N50CTR-E3
Description TRANSISTOR 16 A, 500 V, 0.38 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3, FET General Purpose Power TRANSISTOR 16 A, 500 V, 0.38 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3, FET General Purpose Power
Maker Vishay Vishay
Parts packaging code D2PAK D2PAK
package instruction SMALL OUTLINE, R-PSSO-G2 SMALL OUTLINE, R-PSSO-G2
Contacts 4 4
Reach Compliance Code unknown unknown
Avalanche Energy Efficiency Rating (Eas) 320 mJ 320 mJ
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 500 V 500 V
Maximum drain current (Abs) (ID) 16 A 16 A
Maximum drain current (ID) 16 A 16 A
Maximum drain-source on-resistance 0.38 Ω 0.38 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code TO-263AB TO-263AB
JESD-30 code R-PSSO-G2 R-PSSO-G2
Number of components 1 1
Number of terminals 2 2
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED
Polarity/channel type N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 250 W 250 W
Maximum pulsed drain current (IDM) 40 A 40 A
surface mount YES YES
Terminal form GULL WING GULL WING
Terminal location SINGLE SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED
Transistor component materials SILICON SILICON

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