IDT7200L50L8 datasheet, PDF - EEWORLD Datasheet

IDT7200L50L8: DescriptionFIFO, 256X9, 50ns, Asynchronous, CMOS, CQCC32, LCC-32; Categorystorage storage; File Size440KB，13 Pages; ManufacturerIDT (Integrated Device Technology)

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IDT7200L50L8 Overview

FIFO, 256X9, 50ns, Asynchronous, CMOS, CQCC32, LCC-32

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	IDT (Integrated Device Technology)
Parts packaging code	QFJ
package instruction	LCC-32
Contacts	32
Reach Compliance Code	compliant
ECCN code	EAR99
Maximum access time	50 ns
Other features	RETRANSMIT
period time	65 ns
JESD-30 code	R-CQCC-N32
JESD-609 code	e0
memory density	2304 bit
memory width	9
Number of functions	1
Number of terminals	32
word count	256 words
character code	256
Operating mode	ASYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	256X9
Output characteristics	3-STATE
Exportable	NO
Package body material	CERAMIC, METAL-SEALED COFIRED
encapsulated code	QCCN
Package shape	RECTANGULAR
Package form	CHIP CARRIER
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	225
Certification status	Not Qualified
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	YES
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	TIN LEAD
Terminal form	NO LEAD
Terminal location	QUAD
Maximum time at peak reflow temperature	20

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