Transistor,
| Parameter Name | Attribute value |
| Is it Rohs certified? | incompatible |
| Maker | Philips Semiconductors (NXP Semiconductors N.V.) |
| package instruction | , |
| Reach Compliance Code | unknown |
| Maximum collector current (IC) | 3 A |
| Configuration | Single |
| Minimum DC current gain (hFE) | 85 |
| JESD-609 code | e0 |
| Maximum operating temperature | 150 °C |
| Polarity/channel type | PNP |
| Maximum power dissipation(Abs) | 8 W |
| surface mount | YES |
| Terminal surface | Tin/Lead (Sn/Pb) |
| Nominal transition frequency (fT) | 3 MHz |
| BDS944 | BDS946 | |
|---|---|---|
| Description | Transistor, | Transistor, |
| Is it Rohs certified? | incompatible | incompatible |
| Reach Compliance Code | unknown | unknown |
| Maximum collector current (IC) | 3 A | 3 A |
| Configuration | Single | Single |
| Minimum DC current gain (hFE) | 85 | 85 |
| JESD-609 code | e0 | e0 |
| Maximum operating temperature | 150 °C | 150 °C |
| Polarity/channel type | PNP | PNP |
| Maximum power dissipation(Abs) | 8 W | 8 W |
| surface mount | YES | YES |
| Terminal surface | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
| Nominal transition frequency (fT) | 3 MHz | 3 MHz |
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