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OM6103ST

Description
Power Field-Effect Transistor, 5.5A I(D), 400V, 1.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, HERMETIC SEALED, METAL, TO-257AA, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size44KB,4 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Download Datasheet Parametric Compare View All

OM6103ST Overview

Power Field-Effect Transistor, 5.5A I(D), 400V, 1.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, HERMETIC SEALED, METAL, TO-257AA, 3 PIN

OM6103ST Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerInternational Rectifier ( Infineon )
Parts packaging codeTO-257AA
package instructionFLANGE MOUNT, S-MSFM-P3
Contacts3
Reach Compliance Codeunknown
Other featuresHIGH RELIABILITY
Shell connectionISOLATED
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage400 V
Maximum drain current (Abs) (ID)5.5 A
Maximum drain current (ID)5.5 A
Maximum drain-source on-resistance1.05 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-257AA
JESD-30 codeS-MSFM-P3
Humidity sensitivity level1
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialMETAL
Package shapeSQUARE
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)225
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)50 W
Maximum pulsed drain current (IDM)22 A
Certification statusNot Qualified
surface mountNO
Terminal formPIN/PEG
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
OM6001ST OM6003ST OM6101ST OM6103ST
OM6002ST OM6004ST OM6102ST OM6104ST
POWER MOSFET IN HERMETIC ISOLATED
JEDEC TO-257AA PACKAGE
100V Thru 500V, Up To 14 Amp, N-Channel
MOSFET With Or Without Zener Gate
Clamp Protection
FEATURES
Isolated Hermetic Metal Package
Bi-Lateral Zener Gate Protection (Optional)
Fast Switching, Low Drive Current
Ease Of Paralleling For Added Power
Low R
DS(on)
Available Screened To MIL-S-19500, TX, TXV And S Levels
DESCRIPTION
This series of hermetically packaged products feature the latest advanced MOSFET
and packaging technology. They are ideally suited for Military requirements where
small size, high performance and high reliability are required, and in applications such
as switching power supplies, motor controls, inverters, choppers, audio amplifiers and
high energy pulse circuits. The MOSFET gates are protected using bi-lateral zener
clamps in the OM6101ST series.
MAXIMUM RATINGS
PART NUMBER
OM6001ST/OM6101ST
OM6002ST/OM6102ST
OM6003ST/OM6103ST
OM6004ST/OM6104ST
Note:
V
DS
100 V
200 V
400 V
500 V
R
DS(on)
.20
.44
1.05
1.60
I
D
14 A
9A
5.5 A
4.5 A
3.1
OM6101ST thru OM6104ST is supplied with zener gate protection.
OM6001ST thru OM6004ST is supplied without zener gate protection.
SCHEMATIC
WITHOUT ZENER CLAMPS
OM6001ST - 6004ST
1 - DRAIN
WITH ZENER CLAMPS
OM6101ST - 6104ST
1 - DRAIN
3 - GATE
3 - GATE
ZENERS
2 - SOURCE
2 - SOURCE
4 11 R4
Supersedes 1 07 R3
3.1 - 71

OM6103ST Related Products

OM6103ST OM6101ST OM6102ST
Description Power Field-Effect Transistor, 5.5A I(D), 400V, 1.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, HERMETIC SEALED, METAL, TO-257AA, 3 PIN Power Field-Effect Transistor, 14A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, HERMETIC SEALED, METAL, TO-257AA, 3 PIN Power Field-Effect Transistor, 9A I(D), 200V, 0.44ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, HERMETIC SEALED, METAL, TO-257AA, 3 PIN
Is it Rohs certified? incompatible incompatible incompatible
Parts packaging code TO-257AA TO-257AA TO-257AA
package instruction FLANGE MOUNT, S-MSFM-P3 FLANGE MOUNT, S-MSFM-P3 FLANGE MOUNT, S-MSFM-P3
Contacts 3 3 3
Reach Compliance Code unknown unknown unknown
Other features HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY
Shell connection ISOLATED ISOLATED ISOLATED
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 400 V 100 V 200 V
Maximum drain current (Abs) (ID) 5.5 A 14 A 9 A
Maximum drain current (ID) 5.5 A 14 A 9 A
Maximum drain-source on-resistance 1.05 Ω 0.2 Ω 0.44 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code TO-257AA TO-257AA TO-257AA
JESD-30 code S-MSFM-P3 S-MSFM-P3 S-MSFM-P3
Number of components 1 1 1
Number of terminals 3 3 3
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 150 °C 150 °C 150 °C
Package body material METAL METAL METAL
Package shape SQUARE SQUARE SQUARE
Package form FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Celsius) 225 225 225
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 50 W 50 W 50 W
Maximum pulsed drain current (IDM) 22 A 56 A 36 A
Certification status Not Qualified Not Qualified Not Qualified
surface mount NO NO NO
Terminal form PIN/PEG PIN/PEG PIN/PEG
Terminal location SINGLE SINGLE SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
transistor applications SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON
Humidity sensitivity level 1 - 1
ECCN code - EAR99 EAR99
Base Number Matches - 1 1
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