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ES1BE2

Description
Rectifier Diode, 1 Element, 1A, 100V V(RRM), Silicon, DO-214AC, ROHS COMPLIANT, PLASTIC, CLIP SMA, 2 PIN
CategoryDiscrete semiconductor    diode   
File Size372KB,4 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Environmental Compliance
Download Datasheet Parametric View All

ES1BE2 Overview

Rectifier Diode, 1 Element, 1A, 100V V(RRM), Silicon, DO-214AC, ROHS COMPLIANT, PLASTIC, CLIP SMA, 2 PIN

ES1BE2 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerTaiwan Semiconductor
package instructionROHS COMPLIANT, PLASTIC, CLIP SMA, 2 PIN
Reach Compliance Codecompliant
ECCN codeEAR99
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JEDEC-95 codeDO-214AC
JESD-30 codeR-PDSO-C2
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current1 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Maximum repetitive peak reverse voltage100 V
Maximum reverse recovery time0.035 µs
surface mountYES
Terminal formC BEND
Terminal locationDUAL
ES1A thru ES1J
Taiwan Semiconductor
CREAT BY ART
FEATURES
- Glass passivated junction chip
- Ideal for automated placement
- Super fast recovery time for high efficiency
- Built-in strain rellef
- Moisture sensitivity level: level 1, per J-STD-020
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
Surface Mount Super Fast Rectifiers
MECHANICAL DATA
Case:
DO-214AC (SMA)
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - Green compound (halogen-free)
Base P/N with prefix "H" on packing code - AEC-Q101 qualified
Terminal:
Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
with prefix "H" on packing code meet JESD 201 class 2 whisker test
Polarity:
Indicated by cathode band
Weight:
0.06 g (approximately)
DO-214AC (SMA)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERSTICS
(T
A
=25℃ unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
Maximum instantaneous forward voltage (Note 1)
@1A
Maximum reverse current @ rated VR
T
J
=25
T
J
=100℃
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
I
R
Trr
Cj
R
θJL
R
θJA
T
J
T
STG
16
35
85
- 55 to +150
- 55 to +150
0.95
5
100
35
18
O
ES
1A
50
35
50
ES
1B
100
70
100
ES
1C
150
105
150
ES
1D
200
140
200
1
30
ES
1F
300
210
300
ES
1G
400
280
400
ES
1H
500
350
500
ES
1J
600
420
600
UNIT
V
V
V
A
A
1.3
1.7
V
μA
ns
pF
C/W
O
O
Maximum reverse recovery time (Note 2)
Typical junction capacitance (Note 3)
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: Pulse test with PW=300μs, 1% duty cycle
Note 2: Reverse Recovery Test Conditions: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A
Note 3: Measured at 1 MHz and Applied V
R
=4.0 Volts
C
C
Document Number: DS_D1405052
Version:J14

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