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RB151

Description
1.5 A, SILICON, BRIDGE RECTIFIER DIODE
CategoryDiscrete semiconductor    Ordinary rectifier bridge   
File Size59KB,2 Pages
ManufacturerLGE
Websitehttp://www.luguang.cn/web_en/index.html
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RB151 Overview

1.5 A, SILICON, BRIDGE RECTIFIER DIODE

RB151 Parametric

Parameter NameAttribute value
PackageRB-15
Maximum recurrent peak reverse voltage50
Maximum average forward rectified curre1.5
Peak forward surge curre50
Maximum instantaneous forward voltage1
Maximum reverse curre5
TJ(℃)-55~+150
RB150 - RB158
PRV : 50 - 800 Volts
Io : 1.5 Amperes
WOM
FEATURES :
B
A
RB15
WOM
3.5± 0.3
5.1± 0.55
B
 φ
8.1± 0.2
φ
8 .9± 0.2
*
*
*
*
*
*
*
High surge current capability
High reliability
Low reverse current
Low forward voltage drop
High case dielectric strength of 2000 V
DC
Ideal for printed circuit board
Pb / RoHS Free
A
32.3 MIN
MECHANICAL DATA :
* Case : Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Terminals : Plated lead solderable per
MIL-STD-202, Method 208 guaranteed
* Polarity : Polarity symbols marked on case
* Mounting position : Any
* Weight : 3.4 grams
φ
0 .8± 0.1
4.3
±0
.5
Dimensions in millimeters
MAXIMUM
ambient temperature unless
ELECTRICAL
C
RATINGS AND
otherwise specified
Rating at 25
°
.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Current Tc=50°C
Peak Forward Surge Current, Single half sine wave
Superimposed on rated load (JEDEC Method)
Maximum Forward Voltage per Diode at I
F
= 1 A
Maximum DC Reverse Current
at Rated DC Blocking Voltage
Typical Thermal Resistance (Note 1)
Operating Junction Temperature Range
Storage Temperature Range
Note :
CHARACTERISTICS
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
I
R
I
R(H)
R
θ
JL
T
J
T
STG
RB150
50
35
50
RB151
100
70
100
RB152
200
140
200
RB154
400
280
400
RB156
600
420
600
4.3
±
0.5
29.5± 0.5
RB158
800
560
800
UNIT
V
V
V
A
A
V
µA
µA
°C/W
°C
°C
1.5
40
0.95
10
100
15
- 40 to + 140
- 40 to + 140
Ta = 25
°C
Ta = 100
°C
1 ) Thermal resistance from Junction to lead mounted on P.C. Board with 0.47" X 0.47" ( 12mm X 12mm ) Cu pads.
http://www.luguang.cn
mail:lge@luguang.cn

RB151 Related Products

RB151 RB150 RB152 RB154 RB156 RB158
Description 1.5 A, SILICON, BRIDGE RECTIFIER DIODE 1.5 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE 1.5 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE 1.5 A, SILICON, BRIDGE RECTIFIER DIODE 1.5 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE
Package RB-15 - RB-15 RB-15 RB-15 -
Maximum recurrent peak reverse voltage 50 - 100 400 800 -
Maximum average forward rectified curre 1.5 - 1.5 1.5 1.5 -
Peak forward surge curre 50 - 50 50 50 -
Maximum instantaneous forward voltage 1 - 1 1 1 -
Maximum reverse curre 5 - 5 5 5 -
TJ(℃) -55~+150 - -55~+150 -55~+150 -55~+150 -
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