Philips Semiconductors
Product specification
PowerMOS transistors
Avalanche energy rated
FEATURES
• Repetitive Avalanche Rated
• Fast switching
• Stable off-state characteristics
• High thermal cycling performance
• Isolated package
PHX4N60E
SYMBOL
d
QUICK REFERENCE DATA
V
DSS
= 600 V
g
I
D
= 2.4 A
R
DS(ON)
≤
2.5
Ω
s
GENERAL DESCRIPTION
N-channel, enhancement mode
field-effect
power
transistor,
intended for use in off-line switched
mode power supplies, T.V. and
computer monitor power supplies,
d.c. to d.c. converters, motor control
circuits and general purpose
switching applications.
The PHX4N60E is supplied in the
SOT186A full pack, isolated
package.
PINNING
PIN
1
2
3
case
gate
drain
source
isolated
DESCRIPTION
SOT186A
case
1 2 3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
V
DSS
V
DGR
V
GS
I
D
I
DM
P
D
T
j
, T
stg
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Continuous drain current
Pulsed drain current
Total dissipation
Operating junction and
storage temperature range
CONDITIONS
T
j
= 25 ˚C to 150˚C
T
j
= 25 ˚C to 150˚C; R
GS
= 20 kΩ
T
hs
= 25 ˚C; V
GS
= 10 V
T
hs
= 100 ˚C; V
GS
= 10 V
T
hs
= 25 ˚C
T
hs
= 25 ˚C
MIN.
-
-
-
-
-
-
-
- 55
MAX.
600
600
±
30
2.4
1.5
18
35
150
UNIT
V
V
V
A
A
A
W
˚C
AVALANCHE ENERGY LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
E
AS
Non-repetitive avalanche
energy
CONDITIONS
MIN.
-
MAX.
295
UNIT
mJ
Unclamped inductive load, I
AS
= 3.2 A;
t
p
= 0.24 ms; T
j
prior to avalanche = 25˚C;
V
DD
≤
50 V; R
GS
= 50
Ω;
V
GS
= 10 V; refer
to fig:17
Repetitive avalanche energy
1
I
AR
= 4.5 A; t
p
= 2.5
µs;
T
j
prior to
avalanche = 25˚C; R
GS
= 50
Ω;
V
GS
= 10 V;
refer to fig:18
Repetitive and non-repetitive
avalanche current
E
AR
I
AS
, I
AR
-
-
9
4.5
mJ
A
1
pulse width and repetition rate limited by T
j
max.
December 1998
1
Rev 1.200
Philips Semiconductors
Product specification
PowerMOS transistors
Avalanche energy rated
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
hs
= 25 ˚C unless otherwise specified
SYMBOL
V
isol
PARAMETER
R.M.S. isolation voltage from all
three terminals to external
heatsink
CONDITIONS
f = 50-60 Hz; sinusoidal
waveform;
R.H.
≤
65% ; clean and dustfree
MIN.
-
TYP.
PHX4N60E
MAX.
2500
UNIT
V
C
isol
Capacitance from T2 to external f = 1 MHz
heatsink
-
10
-
pF
THERMAL RESISTANCES
SYMBOL PARAMETER
R
th j-hs
R
th j-a
Thermal resistance junction
to heatsink
Thermal resistance junction
to ambient
CONDITIONS
with heatsink compound
MIN.
-
-
TYP. MAX. UNIT
-
55
3.6
-
K/W
K/W
ELECTRICAL CHARACTERISTICS
T
j
= 25 ˚C unless otherwise specified
SYMBOL PARAMETER
Drain-source breakdown
voltage
∆V
(BR)DSS
/ Drain-source breakdown
∆T
j
voltage temperature
coefficient
R
DS(ON)
Drain-source on resistance
V
GS(TO)
Gate threshold voltage
g
fs
Forward transconductance
I
DSS
Drain-source leakage current
I
GSS
Q
g(tot)
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
d
L
s
C
iss
C
oss
C
rss
V
(BR)DSS
CONDITIONS
V
GS
= 0 V; I
D
= 0.25 mA
V
DS
= V
GS
; I
D
= 0.25 mA
MIN.
600
-
-
2.0
2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP. MAX. UNIT
-
0.1
2.1
3.0
3.4
2
50
10
48
4
24
12
33
82
36
4.5
7.5
600
80
46
-
-
2.5
4.0
-
100
500
200
60
6
30
-
-
-
-
-
-
-
-
-
V
%/K
Ω
V
S
µA
µA
nA
nC
nC
nC
ns
ns
ns
ns
nH
nH
pF
pF
pF
V
GS
= 10 V; I
D
= 2.25 A
V
DS
= V
GS
; I
D
= 0.25 mA
V
DS
= 30 V; I
D
= 2.25 A
V
DS
= 600 V; V
GS
= 0 V
V
DS
= 480 V; V
GS
= 0 V; T
j
= 125 ˚C
Gate-source leakage current V
GS
=
±30
V; V
DS
= 0 V
Total gate charge
Gate-source charge
Gate-drain (Miller) charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Internal drain inductance
Internal source inductance
Input capacitance
Output capacitance
Feedback capacitance
I
D
= 4.5 A; V
DD
= 480 V; V
GS
= 10 V
V
DD
= 300 V; R
D
= 68
Ω;
R
G
= 12
Ω
Measured from drain lead to centre of die
Measured from source lead to source
bond pad
V
GS
= 0 V; V
DS
= 25 V; f = 1 MHz
December 1998
2
Rev 1.200
Philips Semiconductors
Product specification
PowerMOS transistors
Avalanche energy rated
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
T
j
= 25 ˚C unless otherwise specified
SYMBOL PARAMETER
I
S
I
SM
V
SD
t
rr
Q
rr
Continuous source current
(body diode)
Pulsed source current (body
diode)
Diode forward voltage
Reverse recovery time
Reverse recovery charge
CONDITIONS
T
hs
= 25˚C
T
hs
= 25˚C
I
S
= 4.5 A; V
GS
= 0 V
I
S
= 4.5 A; V
GS
= 0 V; dI/dt = 100 A/µs
MIN.
-
-
-
-
-
PHX4N60E
TYP. MAX. UNIT
-
-
-
480
4
4.5
18
1.2
-
-
A
A
V
ns
µC
December 1998
3
Rev 1.200
Philips Semiconductors
Product specification
PowerMOS transistors
Avalanche energy rated
PHX4N60E
120
110
100
90
80
70
60
50
40
30
20
10
0
PD%
Normalised Power Derating
with heatsink compound
10
Zth j-hs, Transient thermal impedance (K/W)
D = 0.5
PHX2N60
1 0.2
0.1
0.05
0.02
0.1
0.01
single pulse
P
D
tp
t
D= p
T
t
100ms
1s
T
0
20
40
60
80
Ths / C
100
120
140
0.001
1us
10us
100us
1ms
10ms
tp, pulse width (s)
Fig.1. Normalised power dissipation.
PD% = 100
⋅
P
D
/P
D 25 ˚C
= f(T
hs
)
ID%
Normalised Current Derating
with heatsink compound
Fig.4. Transient thermal impedance.
Z
th j-hs
= f(t); parameter D = t
p
/T
ID, Drain current (Amps)
Tj = 25 C
10
8
6
4
2
0
5V
VGS = 4.5 V
7V
10 V
6V
5.5 V
PHP3N60
120
110
100
90
80
70
60
50
40
30
20
10
0
12
0
20
40
60
80
Ths / C
100
120
140
0
5
10
15
20
25
VDS, Drain-Source voltage (Volts)
30
Fig.2. Normalised continuous drain current.
ID% = 100
⋅
I
D
/I
D 25 ˚C
= f(T
hs
); conditions: V
GS
≥
10 V
ID, Drain current (Amps)
Fig.5. Typical output characteristics.
I
D
= f(V
DS
); parameter V
GS
100
PHX2N60
6
5
RDS(on), Drain-Source on resistance (Ohms)
4.5 V
VGS = 5 V
5.5 V
PHP3N60
Tj = 25 C
10
N
(O
DS
R
1
)=
/ID
DS
V
tp = 10 us
4
100 us
1 ms
DC
10 ms
100 ms
1
3
2
6V
10 V
0.1
0.01
1
10
100
1000
VDS, Drain-source voltage (Volts)
10000
0
0
2
4
6
8
ID, Drain current (Amps)
10
12
Fig.3. Safe operating area. T
hs
= 25 ˚C
I
D
& I
DM
= f(V
DS
); I
DM
single pulse; parameter t
p
Fig.6. Typical on-state resistance.
R
DS(ON)
= f(I
D
); parameter V
GS
December 1998
4
Rev 1.200
Philips Semiconductors
Product specification
PowerMOS transistors
Avalanche energy rated
PHX4N60E
12
10
8
6
4
ID, Drain current (Amps)
VDS > ID x RDS(on)max
PHP3N60
4
VGS(TO) / V
max.
3
typ.
min.
2
Tj = 150 C
2
Tj = 25 C
0
0
2
4
6
VGS, Gate-Source voltage (Volts)
8
10
1
0
-60
-40
-20
0
20
40
60
Tj / C
80
100
120
140
Fig.7. Typical transfer characteristics.
I
D
= f(V
GS
); parameter T
j
gfs, Transconductance (S)
VDS > ID x RDS(on)max
Fig.10. Gate threshold voltage.
V
GS(TO)
= f(T
j
); conditions: I
D
= 0.25 mA; V
DS
= V
GS
ID / A
SUB-THRESHOLD CONDUCTION
6
5
PHP3N60
1E-01
1E-02
Tj = 25 C
4
3
1E-04
150 C
1E-03
2%
typ
98 %
2
1E-05
1
0
1E-06
0
2
4
6
ID, Drain current (A)
8
10
0
1
2
VGS / V
3
4
Fig.8. Typical transconductance.
g
fs
= f(I
D
); parameter T
j
a
Normalised RDS(ON) = f(Tj)
Fig.11. Sub-threshold drain current.
I
D
= f(V
GS)
; conditions: T
j
= 25 ˚C; V
DS
= V
GS
Junction capacitances (pF)
Ciss
PHP3N60
1000
2
100
1
Coss
Crss
0
-60
-40
-20
0
20
40 60
Tj / C
80
100 120 140
10
1
10
100
VDS, Drain-Source voltage (Volts)
1000
Fig.9. Normalised drain-source on-state resistance.
a = R
DS(ON)
/R
DS(ON)25 ˚C
= f(T
j
); I
D
= 2.25 A; V
GS
= 10 V
Fig.12. Typical capacitances, C
iss
, C
oss
, C
rss
.
C = f(V
DS
); conditions: V
GS
= 0 V; f = 1 MHz
December 1998
5
Rev 1.200
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