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EGFM203-BS

Description
Rectifier Diode, 1 Phase, 1 Element, 2A, 200V V(RRM), Silicon, DO-214AA, SMB-S, 2 PIN
CategoryDiscrete semiconductor    diode   
File Size110KB,7 Pages
ManufacturerFORMOSA
Websitehttp://www.formosams.com/
Environmental Compliance
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EGFM203-BS Overview

Rectifier Diode, 1 Phase, 1 Element, 2A, 200V V(RRM), Silicon, DO-214AA, SMB-S, 2 PIN

EGFM203-BS Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerFORMOSA
package instructionR-PDSO-F2
Reach Compliance Codeunknown
ECCN codeEAR99
applicationEFFICIENCY
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.875 V
JEDEC-95 codeDO-214AA
JESD-30 codeR-PDSO-F2
Maximum non-repetitive peak forward current50 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current2 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Maximum repetitive peak reverse voltage200 V
Maximum reverse current5 µA
Maximum reverse recovery time0.025 µs
surface mountYES
Terminal formFLAT
Terminal locationDUAL

EGFM203-BS Preview

Formosa MS
EGFM201-BS THRU EGFM205-BS
Chip Effcienct Fast Rectifiers
List
List................................................................................................. 1
Package outline............................................................................... 2
Features.......................................................................................... 2
Mechanical data............................................................................... 2
Maximum ratings ............................................................................. 2
Rating and characteristic curves........................................................ 3
Pinning information........................................................................... 4
Marking........................................................................................... 4
Suggested solder pad layout............................................................. 4
Packing information.......................................................................... 5
Reel packing.................................................................................... 6
Suggested thermal profiles for soldering processes............................. 6
High reliability test capabilities........................................................... 7
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
Document ID
Issued Date
2012/08/29
Revised Date
-
Revision
A
Page.
7
Page 1
DS-121538
Formosa MS
EGFM201-BS THRU EGFM205-BS
Chip Effcienct Fast Rectifiers
2.0A Sufrace Mount
Efficient Fast Rectifiers-50-600V
Features
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
Low profile surface mounted application in order to
optimize board space.
High current & surge capability.
Low forward dropdown voltage
Glass passivated chip junction.
Lead-free parts meet environmental standards of
MIL-STD-19500 /228
Suffix "-H" indicates Halogen free parts, ex. EGFM201-BS-H.
0.220(5.6)
0.205(5.2)
0.020(0.5) Typ.
Package outline
SMB-S
0.083(2.1)
0.075(1.9)
0.138(3.5)
0.122(3.1)
Mechanical data
Epoxy:UL94-V0 rated flame retardant
Case : Molded plastic, DO-214AA /SMB-S
Terminals : Solder plated, solderable per
MIL-STD-750, Method 2026
0.040(1.0) Typ.
0.067(1.7)
0.060(1.5)
0.040 (1.0) Typ.
Polarity : Indicated by cathode band
Mounting Position : Any
Weight : Approximated 0.072 gram
Dimensions in inches and (millimeters)
Maximum ratings and Electrical Characteristics
(AT
PARAMETER
Forward rectified current
Forward surge current
See Fig.2
CONDITIONS
T
A
=25
o
C unless otherwise noted)
Symbol
I
O
I
FSM
I
R
C
J
T
STG
-65
25
+175
MIN.
TYP.
MAX.
2.0
50
5.0
100
UNIT
A
A
8.3ms single half sine-wave (JEDEC methode)
V
R
= V
RRM
T
J
= 25
O
C
V
R
= V
RRM
T
J
= 125 C
f=1MHz and applied 4V DC reverse voltage
O
Reverse current
Diode junction capacitance
Storage temperature
*1
V
RRM
(V)
50
100
200
400
600
V
RMS
*2
(V)
35
70
140
280
420
μA
pF
O
C
SYMBOLS
EGFM201-BS
EGFM202-BS
EGFM203-BS
EGFM204-BS
EGFM205-BS
*3
V
R
(V)
50
100
200
400
600
*4
V
F
(V)
*5
t
rr
(ns)
Operating
temperature
T
J
, (
O
C)
*1 Repetitive peak reverse voltage
*2 RMS voltage
*3 Continuous reverse voltage
0.875
25
1.25
1.75
-55 to +150
*4 Maximum forward voltage@I
F
=2.0A
*5 Maximum Reverse recovery time, note 1
Note 1. Reverse recovery time test condition, I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
Document ID
Issued Date
2012/08/29
Revised Date
-
Revision
A
Page.
7
Page 2
DS-121538
Rating and characteristic curves (EGFM201-BS THRU EGFM205-BS)
FIG.1-TYPICAL FORWARD
CHARACTERISTICS
AVERAGE FORWARD CURRENT,(A)
FIG.2-TYPICAL FORWARD CURRENT
DERATING CURVE
2.4
2.0
1.6
1.2
0.8
0.4
0
0
P.C.B. Mounted on
0.2" x 0.2" (5 mm x 5 mm)
Copper Pad Areas
10
EGFM201-BS
~ EGFM203-BS
INSTANTANEOUS FORWARD CURRENT,(A)
1
EGFM204-BS
TJ=25 C
O
0.1
25
50
75
100
125
150
175
EGFM205-BS
LEAD TEMPERATURE (°C)
pulse width =300us
1% duty cycle
0.01
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
FIG.4-MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
PEAK FORWARD SURGE CURRENT,(A)
FORWARD VOLTAGE,(V)
FIG.3- TEST CIRCUIT DIAGRAM AND REVERSE
RECOVERY TIME CHARACTERISTICS
50
W
NONINDUCTIVE
10
W
NONINDUCTIVE
(+)
25Vdc
(approx.)
( )
1
W
NON-
INDUCTIVE
OSCILLISCOPE
(NOTE 1)
D.U.T.
( )
PULSE
GENERATOR
(NOTE 2)
(+)
NUMBER OF CYCLES AT 60Hz
NOTES: 1. Rise Time= 7ns max., Input Impedance= 1 megohm.22pF.
2. Rise Time= 10ns max., Source Impedance= 50 ohms.
FIG.5-TYPICAL JUNCTION CAPACITANCE
70
trr
+0.5A
|
|
|
|
|
|
|
|
JUNCTION CAPACITANCE,(pF)
60
50
40
30
20
10
0
-0.25A
-1.0A
1cm
SET TIME BASE FOR
10 / 20ns / cm
0
.01
.05
.1
.5
1
5
10
50
100
REVERSE VOLTAGE,(V)
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
Document ID
Issued Date
2012/08/29
Revised Date
-
Revision
A
Page.
7
Page 3
DS-121538
Formosa MS
EGFM201-BS THRU EGFM205-BS
Chip Effcienct Fast Rectifiers
Pinning information
Pin
Pin1
Pin2
cathode
anode
Simplified outline
Symbol
1
2
1
2
Marking
Type number
EGFM201-BS
EGFM202-BS
EGFM203-BS
EGFM204-BS
EGFM205-BS
Marking code
E21
E22
E23
E24
E25
Suggested solder pad layout
C
A
B
Dimensions in inches and (millimeters)
PACKAGE
SMB-S
A
0.078 (2.00)
B
0.059 (1.50)
C
0.110 (2.80)
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
Document ID
Issued Date
2012/08/29
Revised Date
-
Revision
A
Page.
7
Page 4
DS-121538
Formosa MS
EGFM201-BS THRU EGFM205-BS
Chip Effcienct Fast Rectifiers
Packing information
P
0
P
1
d
E
F
B
W
A
P
D
2
T
C
D
W
1
D
1
unit:mm
Item
Symbol
Tolerance
SMB-S
Carrier width
Carrier length
Carrier depth
Sprocket hole
13" Reel outside diameter
13" Reel inner diameter
7" Reel outside diameter
7" Reel inner diameter
Feed hole diameter
Sprocket hole position
Punch hole position
Punch hole pitch
Sprocket hole pitch
Embossment center
Overall tape thickness
Tape width
Reel width
A
B
C
d
D
D
1
D
D
1
D
2
E
F
P
P
0
P
1
T
W
W
1
0.1
0.1
0.1
0.1
2.0
min
2.0
min
0.5
0.1
0.1
0.1
0.1
0.1
0.1
0.3
1.0
3.81
5.74
2.24
1.50
330.00
50.00
178.00
62.00
13.00
1.75
5.50
8.00
4.00
2.00
0.23
12.00
18.00
Note:Devices are packed in accor dance with EIA standar RS-481-A and specifications listed above.
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
Document ID
Issued Date
2012/08/29
Revised Date
-
Revision
A
Page.
7
Page 5
DS-121538

EGFM203-BS Related Products

EGFM203-BS EGFM205-BS-H EGFM202-BS-H EGFM203-BS-H EGFM201-BS EGFM201-BS-H EGFM204-BS EGFM204-BS-H EGFM205-BS EGFM202-BS
Description Rectifier Diode, 1 Phase, 1 Element, 2A, 200V V(RRM), Silicon, DO-214AA, SMB-S, 2 PIN Rectifier Diode, 1 Phase, 1 Element, 2A, 600V V(RRM), Silicon, DO-214AA, SMB-S, 2 PIN Rectifier Diode, 1 Phase, 1 Element, 2A, 100V V(RRM), Silicon, DO-214AA, SMB-S, 2 PIN Rectifier Diode, 1 Phase, 1 Element, 2A, 200V V(RRM), Silicon, DO-214AA, SMB-S, 2 PIN Rectifier Diode, 1 Phase, 1 Element, 2A, 50V V(RRM), Silicon, DO-214AA, SMB-S, 2 PIN Rectifier Diode, 1 Phase, 1 Element, 2A, 50V V(RRM), Silicon, DO-214AA, SMB-S, 2 PIN Rectifier Diode, 1 Phase, 1 Element, 2A, 400V V(RRM), Silicon, DO-214AA, SMB-S, 2 PIN Rectifier Diode, 1 Phase, 1 Element, 2A, 400V V(RRM), Silicon, DO-214AA, SMB-S, 2 PIN Rectifier Diode, 1 Phase, 1 Element, 2A, 600V V(RRM), Silicon, DO-214AA, SMB-S, 2 PIN Rectifier Diode, 1 Phase, 1 Element, 2A, 100V V(RRM), Silicon, DO-214AA, SMB-S, 2 PIN
Is it Rohs certified? conform to conform to conform to conform to conform to conform to conform to conform to conform to conform to
package instruction R-PDSO-F2 SMB-S, 2 PIN R-PDSO-F2 R-PDSO-F2 SMB-S, 2 PIN SMB-S, 2 PIN R-PDSO-F2 R-PDSO-F2 SMB-S, 2 PIN R-PDSO-F2
Reach Compliance Code unknown unknown unknown unknown unknow unknow unknow unknow unknow unknown
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
application EFFICIENCY EFFICIENCY EFFICIENCY EFFICIENCY EFFICIENCY EFFICIENCY EFFICIENCY EFFICIENCY EFFICIENCY EFFICIENCY
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Diode component materials SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 0.875 V 1.75 V 0.875 V 0.875 V 0.875 V 0.875 V 1.25 V 1.25 V 1.75 V 0.875 V
JEDEC-95 code DO-214AA DO-214AA DO-214AA DO-214AA DO-214AA DO-214AA DO-214AA DO-214AA DO-214AA DO-214AA
JESD-30 code R-PDSO-F2 R-PDSO-F2 R-PDSO-F2 R-PDSO-F2 R-PDSO-F2 R-PDSO-F2 R-PDSO-F2 R-PDSO-F2 R-PDSO-F2 R-PDSO-F2
Maximum non-repetitive peak forward current 50 A 50 A 50 A 50 A 50 A 50 A 50 A 50 A 50 A 50 A
Number of components 1 1 1 1 1 1 1 1 1 1
Phase 1 1 1 1 1 1 1 1 1 1
Number of terminals 2 2 2 2 2 2 2 2 2 2
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
Minimum operating temperature -55 °C -55 °C -55 °C -55 °C -55 °C -55 °C -55 °C -55 °C -55 °C -55 °C
Maximum output current 2 A 2 A 2 A 2 A 2 A 2 A 2 A 2 A 2 A 2 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Maximum repetitive peak reverse voltage 200 V 600 V 100 V 200 V 50 V 50 V 400 V 400 V 600 V 100 V
Maximum reverse current 5 µA 5 µA 5 µA 5 µA 5 µA 5 µA 5 µA 5 µA 5 µA 5 µA
Maximum reverse recovery time 0.025 µs 0.025 µs 0.025 µs 0.025 µs 0.025 µs 0.025 µs 0.025 µs 0.025 µs 0.025 µs 0.025 µs
surface mount YES YES YES YES YES YES YES YES YES YES
Terminal form FLAT FLAT FLAT FLAT FLAT FLAT FLAT FLAT FLAT FLAT
Terminal location DUAL DUAL DUAL DUAL DUAL DUAL DUAL DUAL DUAL DUAL
Maker FORMOSA FORMOSA FORMOSA FORMOSA FORMOSA FORMOSA FORMOSA FORMOSA FORMOSA -

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