Fast Page DRAM Module, 1MX32, 80ns, CMOS, SIMM-72
| Parameter Name | Attribute value |
| Maker | SAMSUNG |
| Parts packaging code | SIMM |
| package instruction | , |
| Contacts | 72 |
| Reach Compliance Code | unknown |
| ECCN code | EAR99 |
| access mode | FAST PAGE |
| Maximum access time | 80 ns |
| Other features | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
| Spare memory width | 16 |
| JESD-30 code | R-XSMA-N72 |
| memory density | 33554432 bit |
| Memory IC Type | FAST PAGE DRAM MODULE |
| memory width | 32 |
| Number of functions | 1 |
| Number of ports | 1 |
| Number of terminals | 72 |
| word count | 1048576 words |
| character code | 1000000 |
| Operating mode | ASYNCHRONOUS |
| Maximum operating temperature | 70 °C |
| Minimum operating temperature | |
| organize | 1MX32 |
| Output characteristics | 3-STATE |
| Package body material | UNSPECIFIED |
| Package shape | RECTANGULAR |
| Package form | MICROELECTRONIC ASSEMBLY |
| Certification status | Not Qualified |
| refresh cycle | 4096 |
| Maximum supply voltage (Vsup) | 5.5 V |
| Minimum supply voltage (Vsup) | 4.5 V |
| Nominal supply voltage (Vsup) | 5 V |
| surface mount | NO |
| technology | CMOS |
| Temperature level | COMMERCIAL |
| Terminal form | NO LEAD |
| Terminal location | SINGLE |
| KMM5321000WG-8 | KMM5321000W-8 | KMM5321000W-7 | KMM5321000WG-7 | |
|---|---|---|---|---|
| Description | Fast Page DRAM Module, 1MX32, 80ns, CMOS, SIMM-72 | Fast Page DRAM Module, 1MX32, 80ns, CMOS, SIMM-72 | Fast Page DRAM Module, 1MX32, 70ns, CMOS, SIMM-72 | Fast Page DRAM Module, 1MX32, 70ns, CMOS, SIMM-72 |
| Maker | SAMSUNG | SAMSUNG | SAMSUNG | SAMSUNG |
| Parts packaging code | SIMM | SIMM | SIMM | SIMM |
| Contacts | 72 | 72 | 72 | 72 |
| Reach Compliance Code | unknown | unknown | unknown | unknown |
| ECCN code | EAR99 | EAR99 | EAR99 | EAR99 |
| access mode | FAST PAGE | FAST PAGE | FAST PAGE | FAST PAGE |
| Maximum access time | 80 ns | 80 ns | 70 ns | 70 ns |
| Other features | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
| Spare memory width | 16 | 16 | 16 | 16 |
| JESD-30 code | R-XSMA-N72 | R-XSMA-N72 | R-XSMA-N72 | R-XSMA-N72 |
| memory density | 33554432 bit | 33554432 bit | 33554432 bit | 33554432 bit |
| Memory IC Type | FAST PAGE DRAM MODULE | FAST PAGE DRAM MODULE | FAST PAGE DRAM MODULE | FAST PAGE DRAM MODULE |
| memory width | 32 | 32 | 32 | 32 |
| Number of functions | 1 | 1 | 1 | 1 |
| Number of ports | 1 | 1 | 1 | 1 |
| Number of terminals | 72 | 72 | 72 | 72 |
| word count | 1048576 words | 1048576 words | 1048576 words | 1048576 words |
| character code | 1000000 | 1000000 | 1000000 | 1000000 |
| Operating mode | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS |
| Maximum operating temperature | 70 °C | 70 °C | 70 °C | 70 °C |
| organize | 1MX32 | 1MX32 | 1MX32 | 1MX32 |
| Output characteristics | 3-STATE | 3-STATE | 3-STATE | 3-STATE |
| Package body material | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED |
| Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| Package form | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY |
| Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| refresh cycle | 4096 | 4096 | 4096 | 4096 |
| Maximum supply voltage (Vsup) | 5.5 V | 5.5 V | 5.5 V | 5.5 V |
| Minimum supply voltage (Vsup) | 4.5 V | 4.5 V | 4.5 V | 4.5 V |
| Nominal supply voltage (Vsup) | 5 V | 5 V | 5 V | 5 V |
| surface mount | NO | NO | NO | NO |
| technology | CMOS | CMOS | CMOS | CMOS |
| Temperature level | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL |
| Terminal form | NO LEAD | NO LEAD | NO LEAD | NO LEAD |
| Terminal location | SINGLE | SINGLE | SINGLE | SINGLE |
京公网安备 11010802033920号
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