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BLW83

Description
RF Power Bipolar Transistor, Very High Frequency Band, Silicon, NPN, 0.380 INCH, FM-4
CategoryDiscrete semiconductor    The transistor   
File Size14KB,1 Pages
ManufacturerAdvanced Semiconductor, Inc.
Download Datasheet Parametric View All

BLW83 Overview

RF Power Bipolar Transistor, Very High Frequency Band, Silicon, NPN, 0.380 INCH, FM-4

BLW83 Parametric

Parameter NameAttribute value
MakerAdvanced Semiconductor, Inc.
package instructionFLANGE MOUNT, O-CRFM-F4
Contacts4
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum collector current (IC)3 A
Collector-emitter maximum voltage36 V
ConfigurationSingle
Minimum DC current gain (hFE)10
highest frequency bandVERY HIGH FREQUENCY BAND
JESD-30 codeO-CRFM-F4
Number of terminals4
Maximum operating temperature200 °C
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeROUND
Package formFLANGE MOUNT
Polarity/channel typeNPN
Maximum power dissipation(Abs)76 W
Certification statusNot Qualified
surface mountNO
Terminal formFLAT
Terminal locationRADIAL
transistor applicationsAMPLIFIER
Transistor component materialsSILICON

BLW83 Preview

BLW83
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The
ASI BLW83
is Designed for use
in transmitting amplifiers operatimg in
theh.f. and v.h.f. bands and for
applications as linear amplifier in
class-A and AB.
PACKAGE STYLE .380 4L FLG
B
.112 x 45°
A
FEATURES:
P
G
= 20 dB min. at 10 W/30 MHz
IMD
3
= -30 dBc max. at 10 W
(PEP)
Omnigold™
Metalization System
F
E
B
C
D
E
C
E
Ø.125 NOM.
FULL R
J
.125
MAXIMUM RATINGS
I
C
V
CES
V
CEO
V
EBO
P
DISS
T
J
T
STG
θ
JC
3.0 A
65 V
36 V
4.0 V
80 W @ T
C
= 25 °C
-65 °C to +200 °C
-65 °C to +150 °C
2.2 °C/W
DIM
A
B
C
D
E
F
G
H
I
J
.240 / 6.10
.004 / 0.10
.085 / 2.16
.160 / 4.06
MINIMUM
inches / mm
I
GH
MAXIMUM
inches / mm
.220 / 5.59
.785 / 19.94
.720 / 18.29
.970 / 24.64
.230 / 5.84
.730 / 18.54
.980 / 24.89
.385 / 9.78
.006 / 0.15
.105 / 2.67
.180 / 4.57
.280 / 7.11
.255 / 6.48
CHARACTERISTICS
SYMBOL
BV
CES
BV
CEO
BV
EBO
I
CES
h
FE
C
ob
G
PE
IMD
3
I
C
= 10 mA
I
C
= 50 mA
I
E
= 10 mA
V
CE
= 36 V
V
CE
= 5.0 V
T
C
= 25 °C
NONETEST
CONDITIONS
MINIMUM TYPICAL MAXIMUM
65
36
4.0
5
UNITS
V
V
V
mA
---
pF
I
C
= 1.25 A
f = 1.0 MHz
I
CQ
= 25 mA
f = 30 MHz
10
100
20
21
-30
100
V
CB
= 12.5 V
V
CC
= 26 V
P
OUT
= 10 W
(PEP)
---
dB
dB
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004
Specifications are subject to change without notice.
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