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KM418V256AZ-8

Description
Fast Page DRAM, 256KX18, 80ns, CMOS, PZIP40, PLASTIC, ZIP-40
Categorystorage    storage   
File Size62KB,1 Pages
ManufacturerSAMSUNG
Websitehttp://www.samsung.com/Products/Semiconductor/
Download Datasheet Parametric View All

KM418V256AZ-8 Overview

Fast Page DRAM, 256KX18, 80ns, CMOS, PZIP40, PLASTIC, ZIP-40

KM418V256AZ-8 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerSAMSUNG
Parts packaging codeZIP
package instructionZIP, ZIP40,.1
Contacts40
Reach Compliance Codeunknown
ECCN codeEAR99
access modeFAST PAGE
Maximum access time80 ns
Other featuresRAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH
I/O typeCOMMON
JESD-30 codeR-PZIP-T40
JESD-609 codee0
memory density4718592 bit
Memory IC TypeFAST PAGE DRAM
memory width18
Number of functions1
Number of ports1
Number of terminals40
word count262144 words
character code256000
Operating modeASYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize256KX18
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeZIP
Encapsulate equivalent codeZIP40,.1
Package shapeRECTANGULAR
Package formIN-LINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
power supply3.3 V
Certification statusNot Qualified
refresh cycle512
Maximum seat height12.06 mm
self refreshNO
Maximum standby current0.0005 A
Maximum slew rate0.085 mA
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)3 V
Nominal supply voltage (Vsup)3.3 V
surface mountNO
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal pitch1.27 mm
Terminal locationZIG-ZAG
Maximum time at peak reflow temperatureNOT SPECIFIED
width2.96 mm
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