K3N5C1000F-GC12 datasheet, PDF

Datasheet> All Categories > storage> storage> K3N5C1000F-GC12

K3N5C1000F-GC12: DescriptionMASK ROM, 1MX16, 120ns, CMOS, PDSO44, 0.600 INCH, SOP-44; Categorystorage storage; File Size52KB，3 Pages; ManufacturerSAMSUNG; Websitehttp://www.samsung.com/Products/Semiconductor/

Download Datasheet Parametric Compare View All

K3N5C1000F-GC12 Overview

MASK ROM, 1MX16, 120ns, CMOS, PDSO44, 0.600 INCH, SOP-44

K3N5C1000F-GC12 Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	SAMSUNG
Parts packaging code	SOIC
package instruction	SOP, SOP44,.63
Contacts	44
Reach Compliance Code	compliant
ECCN code	EAR99
Maximum access time	120 ns
Spare memory width	8
JESD-30 code	R-PDSO-G44
JESD-609 code	e0
length	28.5 mm
memory density	16777216 bit
Memory IC Type	MASK ROM
memory width	16
Number of functions	1
Number of terminals	44
word count	1048576 words
character code	1000000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	1MX16
Package body material	PLASTIC/EPOXY
encapsulated code	SOP
Encapsulate equivalent code	SOP44,.63
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
power supply	5 V
Certification status	Not Qualified
Maximum seat height	3.1 mm
Maximum standby current	0.00005 A
Maximum slew rate	0.07 mA
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	YES
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	GULL WING
Terminal pitch	1.27 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
width	12.6 mm

K3N5C1000F-GC12 Preview

K3N5C1000F-D(G)C

16M-Bit (2Mx8 /1Mx16) CMOS MASK ROM

FEATURES

•

Switchable organization

2,097,152 x 8(byte mode)

1,048,576 x 16(word mode)

•

Fast access time

Random Access

100ns(Max.) : C

=50pF

120ns(Max.) : C

=100pF

•

Supply voltage : single +5V

•

Current consumption

Operating : 70mA(Max.)

Standby : 50µA(Max.)

•

Fully static operation

•

All inputs and outputs TTL compatible

•

Three state outputs

•

Package

-. K3N5C1000F-DC : 42-DIP-600

-. K3N5C1000F-GC : 44-SOP-600

CMOS MASK ROM

GENERAL DESCRIPTION

The K3N5C1000F-D(G)C is a fully static mask programmable

ROM fabricated using silicon gate CMOS process technology,

and is organized either as 2,097,152 x 8 bit(byte mode) or as

1,048,576 x 16 bit(word mode) depending on BHE voltage

level.(See mode selection table)

This device operates with a 5V single power supply, and all

inputs and outputs are TTL compatible.

Because of its asynchronous operation, it requires no external

clock assuring extremely easy operation.

It is suitable for use in program memory of microprocessor, and

data memory, character generator.

The K3N5C1000F-DC is packaged in a 42-DIP and the

K3N5C1000F-GC in a 44-SOP.

FUNCTIONAL BLOCK DIAGRAM

BUFFERS

AND

DECODER

PIN CONFIGURATION

MEMORY CELL

MATRIX

(1,048,576x16/

2,097,152x8)

42 A

41 A

40 A

39 A

38 A

37 A

36 A

35 A

34 A

33 A

32 BHE

N.C 1

44 N.C

43 A

42 A

41 A

40 A

39 A

38 A

37 A

36 A

35 A

34 A

33 BHE

32 V

31 Q

-1

30 Q

29 Q

28 Q

27 Q

26 Q

25 Q

24 Q

23 V

BUFFERS

AND

DECODER

SENSE AMP.

DATA OUT

BUFFERS

-1

BHE

CONTROL

LOGIC

. . .

CE 11

OE 13

DIP

Pin Name

- A

- Q

-1

BHE

N.C

Pin Function

Address Inputs

Data Outputs

Output 15(Word mode)/

LSB Address(Byte mode)

Word/Byte selection

Chip Enable

Output Enable

Power ( +5V)

Ground

No Connection

31 V

CE 12

30 Q

-1

29 Q

OE 14

28 Q

27 Q

26 Q

25 Q

24 Q

23 Q

22 V

SOP

K3N5C1000F-DC

K3N5C1000F-GC

K3N5C1000F-D(G)C

ABSOLUTE MAXIMUM RATINGS

Item

Voltage on Any Pin Relative to V

Temperature Under Bias

Storage Temperature

Symbol

BIAS

Stg

Rating

CMOS MASK ROM

Unit

°C

-0.3 to +7.0

-10 to +85

-55 to +150

NOTE

: Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded. Functional operation should be restricted to the

conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may

affect device reliability.

RECOMMENDED OPERATING CONDITIONS

(Voltage reference to V

, T

=0 to 70°C)

Item

Supply Voltage

Symbol

Min

4.5

Typ

5.0

Max

5.5

Unit

DC CHARACTERISTICS

Parameter

Operating Current

Standby Current(TTL)

Standby Current(CMOS)

Input Leakage Current

Output Leakage Current

Input High Voltage, All Inputs

Input Low Voltage, All Inputs

Output High Voltage Level

Output Low Voltage Level

Symbol

SB1

SB2

= -400µA

= 2.1mA

Test Conditions

Cycle=5MHz, all outputs open

CE=OE=V

, V

=0.6V to 2.4V (AC Test Condition)

CE=V

, all outputs open

CE=V

, all outputs open

=0 to V

OUT

=0 to V

Min

2.2

-0.3

2.4

Max

+0.3

0.8

0.4

Unit

µA

NOTE

: Minimum DC Voltage(V

) is -0.3V an input pins. During transitions, this level may undershoot to -2.0V for periods <20ns.

Maximum DC voltage on input pins(V

) is V

+0.3V which, during transitions, may overshoot to V

+2.0V for periods <20ns.

MODE SELECTION

Input

Operating

BHE

-1

Output

Mode

Standby

Operating

Data

High-Z

: Dout

: Hi-Z

Power

Standby

Active

CAPACITANCE

=25°C, f=1.0MHz)

Item

Output Capacitance

Input Capacitance

Symbol

OUT

Test Conditions

OUT

=0V

Min

Max

Unit

NOTE

: Capacitance is periodically sampled and not 100% tested.

K3N5C1000F-D(G)C

TEST CONDITIONS

Item

Input Pulse Levels

Input Rise and Fall Times

Input and Output timing Levels

Output Loads

Value

CMOS MASK ROM

AC CHARACTERISTICS

=0°C to +70°C, V

=5V±10%, unless otherwise noted.)

0.6V to 2.4V

10ns

0.8V and 2.0V

1 TTL Gate and C

=50pF or 100pF

READ CYCLE

Item

Read Cycle Time

Chip Enable Access Time

Address Access Time

Output Enable Access Time

Output or Chip Disable to

Output High-Z

Output Hold from Address Change

Sym-

bol

ACE

K3N5C1000F-D(G)C10

=50pF)

Min

100

Max

K3N5C1000F-D(G)C12

=100pF)

Min

120

Max

K3N5C1000F-D(G)C15

=100pF)

Min

150

Max

Unit

TIMING DIAGRAM

READ

ADD

-1(*1)

ACE

ADD1

ADD2

DF(*3)

OUT

15(*2)

VALID DATA

NOTES :

*1. Byte Mode only. A

-1

is Least Significant Bit Address.(BHE = V

)

*2. Word Mode only.(BHE = V

)

*3. t

is defined as the time at which the outputs achieve the open circuit condition and is not referenced to V

or V

level.

More (Only the first 5 pages are displayed. Please Download Datasheet to view the full content.) >

K3N5C1000F-GC12 Related Products

	K3N5C1000F-GC12	K3N5C1000F-DC12	K3N5C1000F-GC10	K3N5C1000F-DC10
Description	MASK ROM, 1MX16, 120ns, CMOS, PDSO44, 0.600 INCH, SOP-44	MASK ROM, 1MX16, 120ns, CMOS, PDIP42, 0.600 INCH, DIP-42	MASK ROM, 1MX16, 100ns, CMOS, PDSO44, 0.600 INCH, SOP-44	MASK ROM, 1MX16, 100ns, CMOS, PDIP42, 0.600 INCH, DIP-42
Is it lead-free?	Contains lead	Contains lead	Contains lead	Contains lead
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible
Maker	SAMSUNG	SAMSUNG	SAMSUNG	SAMSUNG
Parts packaging code	SOIC	DIP	SOIC	DIP
package instruction	SOP, SOP44,.63	DIP, DIP42,.6	SOP, SOP44,.63	DIP, DIP42,.6
Contacts	44	42	44	42
Reach Compliance Code	compliant	compliant	compliant	compliant
ECCN code	EAR99	EAR99	EAR99	EAR99
Maximum access time	120 ns	120 ns	100 ns	100 ns
Spare memory width	8	8	8	8
JESD-30 code	R-PDSO-G44	R-PDIP-T42	R-PDSO-G44	R-PDIP-T42
JESD-609 code	e0	e0	e0	e0
length	28.5 mm	52.42 mm	28.5 mm	52.42 mm
memory density	16777216 bit	16777216 bit	16777216 bit	16777216 bit
Memory IC Type	MASK ROM	MASK ROM	MASK ROM	MASK ROM
memory width	16	16	16	16
Number of functions	1	1	1	1
Number of terminals	44	42	44	42
word count	1048576 words	1048576 words	1048576 words	1048576 words
character code	1000000	1000000	1000000	1000000
Operating mode	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
Maximum operating temperature	70 °C	70 °C	70 °C	70 °C
organize	1MX16	1MX16	1MX16	1MX16
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	SOP	DIP	SOP	DIP
Encapsulate equivalent code	SOP44,.63	DIP42,.6	SOP44,.63	DIP42,.6
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	IN-LINE	SMALL OUTLINE	IN-LINE
Parallel/Serial	PARALLEL	PARALLEL	PARALLEL	PARALLEL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
power supply	5 V	5 V	5 V	5 V
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum seat height	3.1 mm	5.08 mm	3.1 mm	5.08 mm
Maximum standby current	0.00005 A	0.00005 A	0.00005 A	0.00005 A
Maximum slew rate	0.07 mA	0.07 mA	0.07 mA	0.07 mA
Maximum supply voltage (Vsup)	5.5 V	5.5 V	5.5 V	5.5 V
Minimum supply voltage (Vsup)	4.5 V	4.5 V	4.5 V	4.5 V
Nominal supply voltage (Vsup)	5 V	5 V	5 V	5 V
surface mount	YES	NO	YES	NO
technology	CMOS	CMOS	CMOS	CMOS
Temperature level	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	GULL WING	THROUGH-HOLE	GULL WING	THROUGH-HOLE
Terminal pitch	1.27 mm	2.54 mm	1.27 mm	2.54 mm
Terminal location	DUAL	DUAL	DUAL	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
width	12.6 mm	15.24 mm	12.6 mm	15.24 mm

Recommended Resources

Contactless AC voltage regulator circuit diagram

Inexpensive General Purpose Active Filter

Single line remote and forward and reverse control

555 remote control amplifier switch circuit

Novel test pen circuit

Computer motherboard circuit diagram 820 1_42

ARM NXP LPC2300 as an electric meter: I use ADE7758 three-phase energy meter and ARM NXP LPC2300 to write a program to read the energy meter. I don't know how to write it so that it can read correctly. Can someone give me some advice... T...; mjmkmust ARM Technology

Are the interfaces provided by TC35 complete?: I believe many people have used the TC35-GSM module. It is also a relatively early product. Now I am asking questions about it. I feel ashamed. When testing TC35, I found that after using the ATD comm...; zzhuang RF/Wirelessly

Is the ATF15 series compatible with ALTERA's max7 series?????????????????????????????: I want to buy a development board, and the seller said that ATMEL's ATF15 series is compatible with ALTERA's max7 series, and that altera's programming tools and download cables can be used in the ATF...; zdh09 Embedded System

[Flower carving hands-on] Interesting and fun music visualization series of small projects (25) - water tornado vortex lamp: I had the urge to do a series of topics on sound visualization. This topic is a bit difficult and covers a wide range of areas. The related FFT and FHT algorithms are also quite complicated, but I sti...; eagler8 DIY/Open Source Hardware

New energy efficiency standards for LED lighting products exported to Europe will be implemented in September: [size=4][color=black] Developed economies such as the United States, Japan, and the European Union have formulated relevant standards to regulate the safety, performance, and energy efficiency of LED ...; qwqwqw2088 LED Zone

Design of a new intelligent charger: Design of a new intelligent charger...; qwqwqw2088 Analogue and Mixed Signal

Shortcut: S0 S1 S2 S3 S4 S5 S6 S7 S8 S9 SA SB SC SD SE SF SG SH SI SJ SK SL SM SN SO SP SQ SR SS ST SU SV SW SX SY SZ T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 TA TB TC TD TE TF TG TH TI TJ TK TL TM TN TO TP TQ TR TS TT TU TV TW TX TY TZ U0 U1 U2 U3 U4 U6 U7 U8 UA UB UC UD UE UF UG UH UI UJ UK UL UM UN UP UQ UR US UT UU UV UW UX UZ V0 V1 V2 V3 V4 V5 V6 V7 V8 V9 VA VB VC VD VE VF VG VH VI VJ VK VL VM VN VO VP VQ VR VS VT VU VV VW VX VY VZ W0 W1 W2 W3 W4 W5 W6 W7 W8 W9 WA WB WC WD WE WF WG WH WI WJ WK WL WM WN WO WP WR WS WT WU WV WW WY X0 X1 X2 X3 X4 X5 X7 X8 X9 XA XB XC XD XE XF XG XH XK XL XM XN XO XP XQ XR XS XT XU XV XW XX XY XZ Y0 Y1 Y2 Y4 Y5 Y6 Y9 YA YB YC YD YE YF YG YH YK YL YM YN YP YQ YR YS YT YX Z0 Z1 Z2 Z3 Z4 Z5 Z6 Z8 ZA ZB ZC ZD ZE ZF ZG ZH ZJ ZL ZM ZN ZP ZR ZS ZT ZU ZV ZW ZX ZY

Popular Components