K3N7V1000B-YC120 datasheet, PDF

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K3N7V1000B-YC120: DescriptionMASK ROM, 4MX16, 120ns, CMOS, PDSO48, 12 X 18 MM, TSOP1-48; Categorystorage storage; File Size55KB，4 Pages; ManufacturerSAMSUNG; Websitehttp://www.samsung.com/Products/Semiconductor/

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K3N7V1000B-YC120 Overview

MASK ROM, 4MX16, 120ns, CMOS, PDSO48, 12 X 18 MM, TSOP1-48

K3N7V1000B-YC120 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	SAMSUNG
Parts packaging code	TSOP1
package instruction	TSOP1,
Contacts	48
Reach Compliance Code	compliant
ECCN code	EAR99
Maximum access time	120 ns
Spare memory width	8
JESD-30 code	R-PDSO-G48
length	16.4 mm
memory density	67108864 bit
Memory IC Type	MASK ROM
memory width	16
Number of functions	1
Number of terminals	48
word count	4194304 words
character code	4000000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	4MX16
Package body material	PLASTIC/EPOXY
encapsulated code	TSOP1
Package shape	RECTANGULAR
Package form	SMALL OUTLINE, THIN PROFILE
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	240
Certification status	Not Qualified
Maximum seat height	1.2 mm
Maximum supply voltage (Vsup)	3.6 V
Minimum supply voltage (Vsup)	3 V
Nominal supply voltage (Vsup)	3.3 V
surface mount	YES
technology	CMOS
Temperature level	COMMERCIAL
Terminal form	GULL WING
Terminal pitch	0.5 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	30
width	12 mm

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K3N7V(U)1000B-YC

64M-Bit (8Mx8 /4Mx16) CMOS MASK ROM

FEATURES

•

Switchable organization

8,388,608 x 8(byte mode)

4,194,304 x 16(word mode)

•

Fast access time

3.3V Operation : 100ns(Max.)@C

=50pF,

120ns(Max.)@C

=100pF

3.0V Operation : 120ns(Max.)@C

=100pF

•

Supply voltage : single +3.0V/ single +3.3V

•

Current consumption

Operating : 40mA(Max.)

Standby : 50µA(Max.)

•

Fully static operation

•

All inputs and outputs TTL compatible

•

Three state outputs

•

Package

K3N7V(U)1000B-YC : 48-TSOP1-1218

CMOS MASK ROM

GENERAL DESCRIPTION

The K3N7V(U)1000B-YC is a fully static mask programmable

ROM fabricated using silicon gate CMOS process technology,

and is organized either as 8,388,608 x 8 bit(byte mode) or as

4,194,304 x 16 bit(word mode) depending on BHE voltage

level.(See mode selection table)

This device operates with 3.0V or 3.3V power supply, and all

inputs and outputs are TTL compatible.

Because of its asynchronous operation, it requires no external

clock assuring extremely easy operation.

It is suitable for use in program memory of microprocessor, and

data memory, character generator.

The K3N7V(U)1000B-YC is packaged in a 48-TSOP1.

FUNCTIONAL BLOCK DIAGRAM

Pin Name

-1

. . .

BHE

CONTROL

LOGIC

BUFFERS

AND

DECODER

MEMORY CELL

MATRIX

(4,194,304x16/

8,388,608x8)

-1

BHE

BUFFERS

AND

DECODER

DATA OUT

BUFFERS

SENSE AMP.

Vss

N.C

- A

- Q

Pin Function

Address Inputs

Data Outputs

Output 15(Word mode)/

LSB Address(Byte mode)

Word/Byte selection

Chip Enable

Output Enable

Power

Ground

No Connection

K3N7V1000B-YC120 Related Products

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Description	MASK ROM, 4MX16, 120ns, CMOS, PDSO48, 12 X 18 MM, TSOP1-48	MASK ROM, 4MX16, 120ns, CMOS, PDSO48, 12 X 18 MM, TSOP1-48	MASK ROM, 4MX16, 100ns, CMOS, PDSO48, 12 X 18 MM, TSOP1-48	MASK ROM, 4MX16, 100ns, CMOS, PDSO48, 12 X 18 MM, TSOP1-48	MASK ROM, 4MX16, 120ns, CMOS, PDSO48, 12 X 18 MM, TSOP1-48	MASK ROM, 4MX16, 120ns, CMOS, PDSO48, 12 X 18 MM, TSOP1-48
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible
Maker	SAMSUNG	SAMSUNG	SAMSUNG	SAMSUNG	SAMSUNG	SAMSUNG
Parts packaging code	TSOP1	TSOP1	TSOP1	TSOP1	TSOP1	TSOP1
package instruction	TSOP1,	TSOP1,	TSOP1,	TSOP1, TSSOP48,.71,20	TSOP1, TSSOP48,.71,20	TSOP1, TSSOP48,.71,20
Contacts	48	48	48	48	48	48
Reach Compliance Code	compliant	compliant	compliant	compliant	compliant	compliant
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Maximum access time	120 ns	120 ns	100 ns	100 ns	120 ns	120 ns
Spare memory width	8	8	8	8	8	8
JESD-30 code	R-PDSO-G48	R-PDSO-G48	R-PDSO-G48	R-PDSO-G48	R-PDSO-G48	R-PDSO-G48
length	16.4 mm	16.4 mm	16.4 mm	16.4 mm	16.4 mm	16.4 mm
memory density	67108864 bit	67108864 bit	67108864 bit	67108864 bit	67108864 bit	67108864 bit
Memory IC Type	MASK ROM	MASK ROM	MASK ROM	MASK ROM	MASK ROM	MASK ROM
memory width	16	16	16	16	16	16
Number of functions	1	1	1	1	1	1
Number of terminals	48	48	48	48	48	48
word count	4194304 words	4194304 words	4194304 words	4194304 words	4194304 words	4194304 words
character code	4000000	4000000	4000000	4000000	4000000	4000000
Operating mode	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
Maximum operating temperature	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C
organize	4MX16	4MX16	4MX16	4MX16	4MX16	4MX16
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	TSOP1	TSOP1	TSOP1	TSOP1	TSOP1	TSOP1
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE
Parallel/Serial	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL
Peak Reflow Temperature (Celsius)	240	240	240	240	240	240
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum seat height	1.2 mm	1.2 mm	1.2 mm	1.2 mm	1.2 mm	1.2 mm
Maximum supply voltage (Vsup)	3.6 V	3.3 V	3.6 V	3.6 V	3.3 V	3.6 V
Minimum supply voltage (Vsup)	3 V	2.7 V	3 V	3 V	2.7 V	3 V
Nominal supply voltage (Vsup)	3.3 V	3 V	3.3 V	3.3 V	3 V	3.3 V
surface mount	YES	YES	YES	YES	YES	YES
technology	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
Temperature level	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL
Terminal form	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING
Terminal pitch	0.5 mm	0.5 mm	0.5 mm	0.5 mm	0.5 mm	0.5 mm
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
Maximum time at peak reflow temperature	30	30	30	30	30	30
width	12 mm	12 mm	12 mm	12 mm	12 mm	12 mm

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