BLW87 datasheet, PDF - EEWORLD Datasheet

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BLW87: DescriptionRF Power Bipolar Transistor, Very High Frequency Band, Silicon, NPN, 0.380 INCH, FM-4; CategoryDiscrete semiconductor The transistor; File Size16KB，2 Pages; ManufacturerAdvanced Semiconductor, Inc.

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BLW87 Overview

RF Power Bipolar Transistor, Very High Frequency Band, Silicon, NPN, 0.380 INCH, FM-4

BLW87 Parametric

Parameter Name	Attribute value
Maker	Advanced Semiconductor, Inc.
package instruction	FLANGE MOUNT, O-CRFM-F4
Contacts	4
Reach Compliance Code	unknown
ECCN code	EAR99
Maximum collector current (IC)	4 A
Collector-based maximum capacity	110 pF
Collector-emitter maximum voltage	18 V
Configuration	Single
Minimum DC current gain (hFE)	10
highest frequency band	VERY HIGH FREQUENCY BAND
JESD-30 code	O-CRFM-F4
Number of terminals	4
Maximum operating temperature	200 °C
Package body material	CERAMIC, METAL-SEALED COFIRED
Package shape	ROUND
Package form	FLANGE MOUNT
Polarity/channel type	NPN
Maximum power dissipation(Abs)	76 W
Certification status	Not Qualified
surface mount	YES
Terminal form	FLAT
Terminal location	RADIAL
transistor applications	AMPLIFIER
Transistor component materials	SILICON

BLW87 Preview

BLW87

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION:

The

ASI BLW87

is Designed for

Class C, 12.5 V High Band Applications

up to 175 MHz.

PACKAGE STYLE .380 4L FLG

B

.112 x 45°

A

Ø.125 NOM.

FULL R

J

.125

FEATURES:

•

Common Emitter

•

P

G

= 10 dB at 25 W/175 MHz

•

Omnigold™

Metalization System

E

B

C

D

F

E

C

E

MAXIMUM RATINGS

I

C

V

CBO

V

CEO

V

EBO

P

DISS

T

J

T

STG

θ

JC

4.0 A

36 V

18 V

4.0 V

65 W @ T

C

= 25 °C

-65 °C to +200 °C

-65 °C to +150 °C

3.5 °C/W

DIM

A

B

C

D

E

F

G

H

I

J

I

GH

MINIMUM

inches / mm

MAXIMUM

inches / mm

.220 / 5.59

.785 / 19.94

.720 / 18.29

.970 / 24.64

.004 / 0.10

.085 / 2.16

.160 / 4.06

.240 / 6.10

.230 / 5.84

.730 / 18.54

.980 / 24.89

.385 / 9.78

.006 / 0.15

.105 / 2.67

.180 / 4.57

.280 / 7.11

.255 / 6.48

CHARACTERISTICS

SYMBOL

BV

CEO

BV

CES

BV

EBO

I

CBO

h

FE

C

OB

P

G

η

C

I

C

= 50 mA

I

C

= 15 mA

I

E

= 5.0 mA

V

CB

= 15 V

V

CE

= 5.0 V

T

C

= 25 °C

NONETEST

CONDITIONS

MINIMUM TYPICAL MAXIMUM

18

36

4.0

5.0

UNITS

V

mA

---

pF

dB

%

I

C

= 250 mA

f = 1.0 MHz

P

OUT

= 25 W

f = 175 MHz

20

---

110

V

CB

= 12.5 V

V

CE

= 12.5 V

10

60

A D V A N C E D S E M I C O N D U C T O R, I N C.

7525 ETHEL AVENUE

•

NORTH HOLLYWOOD, CA 91605

•

(818) 982-1200

•

FAX (818) 765-3004

Specifications are subject to change without notice.

REV. A

1/2

BLW87

ERROR! REFERENCE SOURCE NOT FOUND.

IMPEDANCE DATA

FREQ

160 MHz

P

IN

= 3.0 W

V

CE

= 12.5 V

Z

IN

(Ω)

1.0 + j0.4

Z

CL

(Ω)

2.3 + j0.1

A D V A N C E D S E M I C O N D U C T O R, I N C.

7525 ETHEL AVENUE

•

NORTH HOLLYWOOD, CA 91605

•

(818) 982-1200

•

FAX (818) 765-3004

Specifications are subject to change without notice.

REV. A

2/2

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