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MTC8959G6

Description
P-Channel Enhancement Mode MOSFET
File Size341KB,13 Pages
ManufacturerCYSTEKEC
Websitehttp://www.cystekec.com/
Download Datasheet View All

MTC8959G6 Overview

P-Channel Enhancement Mode MOSFET

CYStech Electronics Corp.
N- AND P-Channel Enhancement Mode MOSFET
Spec. No. : C862G6
Issued Date : 2012.08.15
Revised Date : 2012.11.21
Page No. : 1/13
MTC8959G6
BV
DSS
I
D
R
DSON
(
TYP
.)
N-CH
100V
1.4A(V
GS
=10V)
280mΩ(V
GS
=10V)
295mΩ(V
GS
=4.5V)
P-CH
-100V
-1.1A(V
GS
=-10 V)
450mΩ(V
GS
=-10V)
500mΩ(V
GS
=-4.5V)
Description
The MTC8959G6 consists of a N-channel and a P-channel enhancement-mode MOSFET in a single
TSOP-6 package, providing the designer with the best combination of fast switching, ruggedized device
design, low on-resistance and cost-effectiveness.
The TSOP-6 package is universally preferred for all commercial-industrial surface mount applications.
Features
Simple drive requirement
Low gate charge
Low on-resistance
Fast switching speed
Pb-free package
Equivalent Circuit
MTC8959G6
Outline
TSOP-6
D1
S1
D2
G:Gate
S:Source
D:Drain
G1
S2
G2
MTC8959G6
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