CYStech Electronics Corp.
N-Channel Enhancement Mode Power MOSFET
Spec. No. : C887Q8
Issued Date : 2012.11.30
Revised Date : 2013.03.01
Page No. : 1/9
MTD30N10Q8
Description
BV
DSS
I
D
R
DSON
@V
GS
=10V, I
D
=6A
R
DSON
@V
GS
=4.5V, I
D
=5A
100V
6A
33mΩ(typ)
35mΩ(typ)
The MTD30N10Q8 is a N-channel enhancement-mode MOSFET, providing the designer with the best
combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.
The SOP-8 package is universally preferred for all commercial-industrial surface mount applications.
Features
•
Single Drive Requirement
•
Fast Switching Characteristic
•
Repetitive Avalanche Rated
•
Pb-free lead plating package
Symbol
MTD30N10Q8
Outline
SOP-8
Pin 1
G：Gate
D：Drain
S：Source
MTD30N10Q8
CYStek Product Specification
CYStech Electronics Corp.
Absolute Maximum Ratings
(Ta=25°C)
Parameter
Symbol
Spec. No. : C887Q8
Issued Date : 2012.11.30
Revised Date : 2013.03.01
Page No. : 2/9
Limits
Unit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @V
GS
=10V, T
A
=25°C
Continuous Drain Current @V
GS
=10V, T
A
=70°C
Pulsed Drain Current
Avalanche Current
Avalanche Energy @ L=1mH, I
D
=6A, R
G
=25Ω
Repetitive Avalanche Energy @ L=0.05mH
T
A
=25℃
Total Power Dissipation
*3
T
A
=70℃
Operating Junction and Storage Temperature Range
V
DS
V
GS
I
D
I
DM
I
AS
E
AS
E
AR
P
D
Tj, Tstg
100
±20
6
4.8
40 *1
6
18
0.5 *2
3.1
2
-55~+150
V
A
mJ
W
°C
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Symbol
R
th,j-c
R
th,j-a
Value
20
40 *3
Unit
°C/W
°C/W
Note : 1. Pulse width limited by maximum junction temperature.
2. Duty cycle≤1%.
3. Surface mounted on 1 in² copper pad of FR-4 board, t≤10s ; 125°C/W when mounted on minimum copper pad.
The value in any given application depends on the user’s specific board design.
Characteristics (T
C
=25°C, unless otherwise specified)
Symbol
Static
BV
DSS
V
GS(th)
G
FS
I
GSS
I
DSS
R
DS(ON)
Dynamic
Ciss
Coss
Crss
*1
Min.
100
1.4
-
-
-
-
-
-
-
-
-
Typ.
-
2
20
-
-
-
33
35
1170
104
53
Max.
-
2.7
-
±
100
1
25
45
50
-
-
-
Unit
Test Conditions
V
GS
=0, I
D
=250μA
V
DS
= V
GS
, I
D
=250μA
V
DS
=5V, I
D
=6A
V
GS
=
±
20
V
DS
=100V, V
GS
=0
V
DS
=100V, V
GS
=0, Tj=125°C
V
GS
=10V, I
D
=6A
V
GS
=4.5V, I
D
=5A
V
GS
=0V, V
DS
=30V, f=1MHz
V
S
nA
μA
m
Ω
*1
pF
MTD30N10Q8
CYStek Product Specification
CYStech Electronics Corp.
Characteristics (T
C
=25°C, unless otherwise specified)
Symbol
Qg
*1, 2
Qgs
*1, 2
Qgd
*1, 2
t
d(ON)
*1, 2
tr
*1, 2
t
d(OFF)
*1, 2
t
f
*1, 2
Rg
Source-Drain Diode
I
S
*1
I
SM
*3
V
SD
*1
trr
Qrr
Min.
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
21
3.5
6
11
7
28
12
3.3
-
-
0.7
40
150
Max.
-
-
-
-
-
-
-
-
3
12
1.2
-
-
Unit
nC
Test Conditions
Spec. No. : C887Q8
Issued Date : 2012.11.30
Revised Date : 2013.03.01
Page No. : 3/9
V
DS
=50V, V
GS
=10V, I
D
=6A
ns
Ω
V
DS
=50V, I
D
=6A, V
GS
=10V, R
GS
=3Ω
V
GS
=15mV, V
DS
=0V, f=1MHz
A
V
ns
nC
I
F
=1A, V
GS
=0V
I
F
=I
S
, dI
F
/dt=100A/μs
Note : *1.Pulse Test : Pulse Width
≤300μs,
Duty Cycle≤2%
*2.Independent of operating temperature
*3.Pulse width limited by maximum junction temperature.
Ordering Information
Device
MTD30N10Q8-0-T3-G
Package
SOP-8
(Pb-free lead plating and halogen-free package)
Shipping
2500 pcs / Tape & Reel
MTD30N10Q8
CYStek Product Specification
CYStech Electronics Corp.
Typical Characteristics
Typical Output Characteristics
40
35
I
D
, Drain Current(A)
30
25
20
15
10
5
0
0
2
4
6
8
V
DS
, Drain-Source Voltage(V)
10
V
GS
=3V
10V, 9V,8V,7V,6V, 5V, 4V
Spec. No. : C887Q8
Issued Date : 2012.11.30
Revised Date : 2013.03.01
Page No. : 4/9
Brekdown Voltage vs Ambient Temperature
1.6
BV
DSS
, Normalized Drain-Source
Breakdown Voltage
1.4
1.2
1
0.8
0.6
0.4
-60
-20
20
60
100
140
Tj, Junction Temperature(°C)
180
I
D
=250
μ
A,
V
GS
=0V
Static Drain-Source On-State resistance vs Drain Current
Reverse Drain Current vs Source-Drain Voltage
1.2
V
SD
, Source-Drain Voltage(V)
1
Tj=25°C
100
R
DS(ON)
, Static Drain-Source On-State
Resistance(mΩ)
V
GS
=4.5V
0.8
0.6
Tj=150°C
V
GS
=10V
0.4
0.2
10
0.1
1
10
I
D
, Drain Current(A)
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
100
0
2
4
6
8
I
DR
, Reverse Drain Current(A)
10
Drain-Source On-State Resistance vs Junction Tempearture
100
R
DS(ON)
, Static Drain-Source On-
State Resistance(mΩ)
90
80
70
60
50
40
30
20
10
0
0
2
4
6
8
V
GS
, Gate-Source Voltage(V)
10
I
D
=6A
2.4
R
DS(ON)
, Normalized Static Drain-
Source On-State Resistance
V
GS
=10V, I
D
=6A
2
1.6
1.2
0.8
R
DS(ON)
@ Tj=25°C : 33 mΩ
0.4
-60 -40 -20
0 20 40 60 80 100 120 140 160
Tj, Junction Temperature(°C)
MTD30N10Q8
CYStek Product Specification
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Capacitance vs Drain-to-Source Voltage
V
GS(th)
, Normalized Threshold Voltage
10000
Ciss
Spec. No. : C887Q8
Issued Date : 2012.11.30
Revised Date : 2013.03.01
Page No. : 5/9
Threshold Voltage vs Junction Tempearture
1.6
1.4
1.2
1
0.8
0.6
0.4
I
D
=250
μ
A
Capacitance---(pF)
1000
C
oss
100
Crss
10
0.1
1
10
V
DS
, Drain-Source Voltage(V)
Forward Transfer Admittance vs Drain Current
100
G
FS
, Forward Transfer Admittance(S)
V
GS
, Gate-Source Voltage(V)
100
-60
-20
20
60
100
140
Tj, Junction Temperature(°C)
Gate Charge Characteristics
10
8
6
4
2
0
V
DS
=50V
I
D
=6A
10
1
V
DS
=10V
Pulsed
Ta=25°C
0.1
0.01
0.001
0.01
0.1
1
I
D
, Drain Current(A)
10
0
4
8
12
16
Total Gate Charge---Qg(nC)
20
24
Maximum Safe Operating Area
100
10
Maximum Drain Current vs Junction Temperature
7
I
D
, Maximum Drain Current(A)
R
DS(ON)
Limited
6
5
4
3
2
1
0
T
A
=25°C, V
GS
=10V, R
θ
JA
=40°C/W
I
D
, Drain Current(A)
100
μ
s
1
0.1
0.01
0.001
0.01
T
A
=25°C, Tj(max)=150°C,
V
GS
=10V, R
θ
JA
=125°C/W
Single Pulse
1ms
10ms
100ms
1s
DC
0.1
1
10
100
V
DS
, Drain-Source Voltage(V)
1000
25
50
75
100
125
150
Tj, Junction Temperature(°C)
175
MTD30N10Q8
CYStek Product Specification
Embedded System
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