P4C187L-15DM datasheet, PDF - EEWORLD Datasheet

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P4C187L-15DM: DescriptionStandard SRAM, 64KX1, 15ns, CMOS, CDIP22, 0.300 INCH, CERDIP-22; Categorystorage storage; File Size71KB，8 Pages; ManufacturerPyramid Semiconductor Corporation; Websitehttp://www.pyramidsemiconductor.com/

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P4C187L-15DM Overview

Standard SRAM, 64KX1, 15ns, CMOS, CDIP22, 0.300 INCH, CERDIP-22

P4C187L-15DM Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	Pyramid Semiconductor Corporation
Parts packaging code	DIP
package instruction	0.300 INCH, CERDIP-22
Contacts	22
Reach Compliance Code	compliant
ECCN code	3A001.A.2.C
Maximum access time	15 ns
I/O type	SEPARATE
JESD-30 code	R-GDIP-T22
JESD-609 code	e0
length	27.559 mm
memory density	65536 bit
Memory IC Type	STANDARD SRAM
memory width	1
Number of functions	1
Number of terminals	22
word count	65536 words
character code	64000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	125 °C
Minimum operating temperature	-55 °C
organize	64KX1
Output characteristics	3-STATE
Package body material	CERAMIC, GLASS-SEALED
encapsulated code	DIP
Encapsulate equivalent code	DIP22,.3
Package shape	RECTANGULAR
Package form	IN-LINE
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
power supply	5 V
Certification status	Not Qualified
Maximum seat height	5.715 mm
Maximum standby current	0.0006 A
Minimum standby current	2 V
Maximum slew rate	0.17 mA
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	NO
technology	CMOS
Temperature level	MILITARY
Terminal surface	TIN LEAD
Terminal form	THROUGH-HOLE
Terminal pitch	2.54 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
width	7.62 mm

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P4C187/P4C187L

ULTRA HIGH SPEED 64K x 1

STATIC CMOS RAMS

FEATURES

Full CMOS, 6T Cell

High Speed (Equal Access and Cycle Times)

– 10/12/15/20/25 ns (Commercial)

– 12/15/20/25/35 ns (Industrial)

– 15/20/25/35/45 ns (Military)

Low Power Operation

– 743 mW Active -10

– 660/770 mW Active for -12/15

– 550/660 mW Active for -20/25 /35

– 193/220 mW Standby (TTL Input)

– 83/110 mW Standby (CMOS Input) P4C187

– 5.5 mW Standby (CMOS Input) P4C187L (Military)

Single 5V

10% Power Supply

Data Retention with 2.0V Supply (P4C187L Military)

Separate Data I/O

Three-State Output

TTL Compatible Output

Fully TTL Compatible Inputs

Standard Pinout (JEDEC Approved)

– 22-Pin 300 mil DIP

– 24-Pin 300 mil SOJ

– 22-Pin 290x490 mil LCC

DESCRIPTION

The P4C187/L are 65, 536-bit ultra high speed static RAMs

organized as 64K x 1. The CMOS memories require no

clocks or refreshing and have equal access and cycle times.

The RAMs operate from a single 5V

10% tolerance power

supply. Data integrity is maintained for supply voltages down

to 2.0V, typically drawing 10µA.

Access times as fast as 10 nanoseconds are available,

greatly enhancing system speeds. CMOS reduces power

consumption to a low 743mW active, 193/83mW standby

for TTL/CMOS inputs and only 5.5 mW standby for the

P4C187L.

The P4C187/L are available in 22-pin 300 mil DIP, 24-pin

300 mil SOJ, and 22-pin LCC packages providing excellent

board level densities.

FUNCTIONAL BLOCK DIAGRAM

PIN CONFIGURATIONS

V CC

A 15

A 14

A 13

A 12

A 11

A 10

DIN

DOUT

(8)

ROW

SELECT

65,356-BIT

MEMORY

ARRAY

11 12

V CC

A 15

A 14

A 13

A 12

A 11

A 10

INPUT

DATA

CONTROL

COLUMN I/O

OUT

DOUT

GND

COLUMN

SELECT

GND

(8)

DIP (P3, D3)

TOP VIEW

LCC (L3)

TOP VIEW

For SOJ pin configuration, please see Selection Guide.

Means Quality, Service and Speed

1Q97

DIN

P4C187L-15DM Related Products

	P4C187L-15DM	71421SA25TFGI8	P4C187L-15LM	P4C187L-20DM	P4C187L-20LM	P4C187L-45LM	P4C187L-25DM	P4C187L-35DM
Description	Standard SRAM, 64KX1, 15ns, CMOS, CDIP22, 0.300 INCH, CERDIP-22	HIGH SPEED 2K X 8 DUAL-PORT STATIC RAM	Standard SRAM, 64KX1, 15ns, CMOS, 0.290 X 0.490 INCH, LCC-22	Standard SRAM, 64KX1, 20ns, CMOS, CDIP22, 0.300 INCH, CERDIP-22	Standard SRAM, 64KX1, 20ns, CMOS, 0.290 X 0.490 INCH, LCC-22	Standard SRAM, 64KX1, 45ns, CMOS, 0.290 X 0.490 INCH, LCC-22	Standard SRAM, 64KX1, 25ns, CMOS, CDIP22, 0.300 INCH, CERDIP-22	Standard SRAM, 64KX1, 35ns, CMOS, CDIP22, 0.300 INCH, CERDIP-22
Is it lead-free?	Contains lead	-	Contains lead	Contains lead	Contains lead	Contains lead	Contains lead	Contains lead
Is it Rohs certified?	incompatible	-	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible
Parts packaging code	DIP	-	LCC	DIP	LCC	LCC	DIP	DIP
package instruction	0.300 INCH, CERDIP-22	-	QCCN, LCC22,.3X.5	DIP, DIP22,.3	QCCN, LCC22,.3X.5	QCCN, LCC22,.3X.5	DIP, DIP22,.3	0.300 INCH, CERDIP-22
Contacts	22	-	22	22	22	22	22	22
Reach Compliance Code	compliant	-	compliant	compliant	compliant	compliant	compliant	compliant
ECCN code	3A001.A.2.C	-	3A001.A.2.C	3A001.A.2.C	3A001.A.2.C	3A001.A.2.C	3A001.A.2.C	3A001.A.2.C
Maximum access time	15 ns	-	15 ns	20 ns	20 ns	45 ns	25 ns	35 ns
I/O type	SEPARATE	-	SEPARATE	SEPARATE	SEPARATE	SEPARATE	SEPARATE	SEPARATE
JESD-30 code	R-GDIP-T22	-	R-XQCC-N22	R-GDIP-T22	R-XQCC-N22	R-XQCC-N22	R-GDIP-T22	R-GDIP-T22
length	27.559 mm	-	12.446 mm	27.559 mm	12.446 mm	12.446 mm	27.559 mm	27.559 mm
memory density	65536 bit	-	65536 bit	65536 bit	65536 bit	65536 bit	65536 bit	65536 bit
Memory IC Type	STANDARD SRAM	-	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM
memory width	1	-	1	1	1	1	1	1
Number of functions	1	-	1	1	1	1	1	1
Number of terminals	22	-	22	22	22	22	22	22
word count	65536 words	-	65536 words	65536 words	65536 words	65536 words	65536 words	65536 words
character code	64000	-	64000	64000	64000	64000	64000	64000
Operating mode	ASYNCHRONOUS	-	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
Maximum operating temperature	125 °C	-	125 °C	125 °C	125 °C	125 °C	125 °C	125 °C
Minimum operating temperature	-55 °C	-	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C
organize	64KX1	-	64KX1	64KX1	64KX1	64KX1	64KX1	64KX1
Output characteristics	3-STATE	-	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE
Package body material	CERAMIC, GLASS-SEALED	-	UNSPECIFIED	CERAMIC, GLASS-SEALED	UNSPECIFIED	UNSPECIFIED	CERAMIC, GLASS-SEALED	CERAMIC, GLASS-SEALED
encapsulated code	DIP	-	QCCN	DIP	QCCN	QCCN	DIP	DIP
Encapsulate equivalent code	DIP22,.3	-	LCC22,.3X.5	DIP22,.3	LCC22,.3X.5	LCC22,.3X.5	DIP22,.3	DIP22,.3
Package shape	RECTANGULAR	-	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	IN-LINE	-	CHIP CARRIER	IN-LINE	CHIP CARRIER	CHIP CARRIER	IN-LINE	IN-LINE
Parallel/Serial	PARALLEL	-	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	-	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
power supply	5 V	-	5 V	5 V	5 V	5 V	5 V	5 V
Certification status	Not Qualified	-	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum seat height	5.715 mm	-	2.032 mm	5.715 mm	2.032 mm	2.032 mm	5.715 mm	5.715 mm
Maximum standby current	0.0006 A	-	0.0006 A	0.0006 A	0.0006 A	0.0006 A	0.0006 A	0.0006 A
Minimum standby current	2 V	-	2 V	2 V	2 V	2 V	2 V	2 V
Maximum slew rate	0.17 mA	-	0.17 mA	0.16 mA	0.16 mA	0.145 mA	0.155 mA	0.15 mA
Maximum supply voltage (Vsup)	5.5 V	-	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V
Minimum supply voltage (Vsup)	4.5 V	-	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V
Nominal supply voltage (Vsup)	5 V	-	5 V	5 V	5 V	5 V	5 V	5 V
surface mount	NO	-	YES	NO	YES	YES	NO	NO
technology	CMOS	-	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
Temperature level	MILITARY	-	MILITARY	MILITARY	MILITARY	MILITARY	MILITARY	MILITARY
Terminal form	THROUGH-HOLE	-	NO LEAD	THROUGH-HOLE	NO LEAD	NO LEAD	THROUGH-HOLE	THROUGH-HOLE
Terminal pitch	2.54 mm	-	1.27 mm	2.54 mm	1.27 mm	1.27 mm	2.54 mm	2.54 mm
Terminal location	DUAL	-	QUAD	DUAL	QUAD	QUAD	DUAL	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED	-	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
width	7.62 mm	-	7.366 mm	7.62 mm	7.366 mm	7.366 mm	7.62 mm	7.62 mm

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