SMF75 datasheet, PDF - EEWORLD Datasheet

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SMF75: Description1000 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-219; Categorysemiconductor Discrete semiconductor; File Size748KB，4 Pages; ManufacturerJuxing Electronic; Websitehttp://www.trr-jx.com

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SMF75 Overview

1000 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-219

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TVS: SMF5.0 thru SMF170A

Glass Passivated TVS

Features

●

For surface mounted applications in

order to optimize board space

Low profile space

Glass passivated chip

Low inductance

Excellent clamping capability

Very fast response time

Typical I

less than 1µA at V

200 W peak pulse power capability

with a 10/1000 µs waveform

Component in accordance to

RoHS 2002/95/1 and WEEE 2002/96/EC

●

Mechanical Date

●

Case: JEDEC SOD-123FL molded plastic

over passivated chip

Terminals: Solder plated, solderable per

MIL-STD-750 Method 2026

Polarity: For uni-directional types the band

by laser denotes the cathode, which is

positive with respect to the anode under

normal TVS operation

●

Maximum Ratings & Thermal Characteristics & Electrical Characteristics

= 25 °C unless otherwise noted)

Symbol

Peak pulse power dissipation

with a 10/1000µs waveform (Note1,2)

Peak pulse current 10/1000μS waveform(Note 1)

Forward voltage @IF=200mA

Peak forward surge current 8.3ms single half sine-wave

Operating junction and storage temperature range

Notes:

1.Non-repetitive current pulse and derated above T

=25℃

2.Mounted on 5.0mm

copper pads to each terminal.

VALUE

200

See Next Table

1.25

–55 to +150

UNIT

°C

PPM

FSM

STG

http://www.trr-jx.com

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