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BC846- BC850 NPN Epitaxial Silicon Transistor
August 2006
BC846- BC850
NPN Epitaxial Silicon Transistor
Features
• Switching and Amplifier Applications
• Suitable for automatic insertion in thick and thin-film circuits
• Low Noise: BC849, BC850
• Complement to BC856 ... BC860
2
1
3
tm
SOT-23
1. Base 2. Emitter 3. Collector
Absolute Maximum Ratings*
Symbol
V
CBO
Collector-Base Voltage
T
a
= 25°C unless otherwise noted
Parameter
: BC846
: BC847/850
: BC848/849
Value
80
50
30
65
45
30
6
5
100
310
150
-65 ~ 150
Units
V
V
V
V
V
V
V
V
mA
mW
°C
°C
V
CEO
Collector-Emitter Voltage : BC846
: BC847/850
: BC848/849
Emitter-Base Voltage
Collector Current (DC)
Collector Power Dissipation
Junction Temperature
Storage Temperature
: BC846/847
: BC848/849/850
V
EBO
I
C
P
C
T
J
T
STG
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Electrical Characteristics*
T
a
=25°C unless otherwise noted
Symbol
I
CBO
h
FE
V
CE
(sat)
V
BE
(sat)
V
BE
(on)
f
T
C
ob
C
ib
NF
Parameter
Collector Cut-off Current
DC Current Gain
Test Condition
V
CB
=30V, I
E
=0
V
CE
=5V, I
C
=2mA
Min.
110
Typ.
Max.
15
800
Units
nA
Collector-Emitter Saturation Voltage I
C
=10mA, I
B
=0.5mA
I
C
=100mA, I
B
=5mA
Collector-Base Saturation Voltage
Base-Emitter On Voltage
Current Gain Bandwidth Product
Output Capacitance
Input Capacitance
Noise Figure
: BC846/847/848
: BC849/850
: BC849
: BC850
I
C
=10mA, I
B
=0.5mA
I
C
=100mA, I
B
=5mA
V
CE
=5V, I
C
=2mA
V
CE
=5V, I
C
=10mA
V
CE
=5V, I
C
=10mA,
f=100MHz
V
CB
=10V, I
E
=0, f=1MHz
V
EB
=0.5V, I
C
=0, f=1MHz
V
CE
= 5V, I
C
= 200µA
R
G
=2KΩ, f=1KHz
V
CE
= 5V, I
C
= 200µA
R
G
=2KΩ, f=30~15000Hz
580
90
200
700
900
660
300
3.5
9
2
1.2
1.4
1.4
250
600
mV
mV
mV
mV
700
720
mV
mV
MHz
6
pF
pF
10
4
4
3
dB
dB
dB
dB
* Pulse Test: Pulse Width≤300µs, Duty Cycle≤2%
©2006 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
BC846- BC850 Rev. B
BC846- BC850 NPN Epitaxial Silicon Transistor
h
FE
Classification
Classification
h
FE
A
110 ~ 220
B
200 ~ 450
C
420 ~ 800
Ordering Information
Device
(note1)
BC846AMTF
BC846BMTF
BC846CMTF
BC847AMTF
BC847BMTF
BC847CMTF
BC848AMTF
BC848BMTF
BC848CMTF
BC849AMTF
BC849BMTF
BC849CMTF
BC850AMTF
BC850BMTF
BC850CMTF
Note1 :
Device Marking
8AA
8AB
8AC
8BA
8BB
8BC
8CA
8CB
8CC
8DA
8DB
8DC
8EA
8EB
8EC
Package
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
Packing Method
Tape & Reel
Tape & Reel
Tape & Reel
Tape & Reel
Tape & Reel
Tape & Reel
Tape & Reel
Tape & Reel
Tape & Reel
Tape & Reel
Tape & Reel
Tape & Reel
Tape & Reel
Tape & Reel
Tape & Reel
Qty(pcs)
3000
3000
3000
3000
3000
3000
3000
3000
3000
3000
3000
3000
3000
3000
3000
Pin Difinitions
1.Base 2.Emitter 3.Collector
1.Base 2.Emitter 3.Collector
1.Base 2.Emitter 3.Collector
1.Base 2.Emitter 3.Collector
1.Base 2.Emitter 3.Collector
1.Base 2.Emitter 3.Collector
1.Base 2.Emitter 3.Collector
1.Base 2.Emitter 3.Collector
1.Base 2.Emitter 3.Collector
1.Base 2.Emitter 3.Collector
1.Base 2.Emitter 3.Collector
1.Base 2.Emitter 3.Collector
1.Base 2.Emitter 3.Collector
1.Base 2.Emitter 3.Collector
1.Base 2.Emitter 3.Collector
Affix “-A,-B,-C” means hFE classification.
Affix “-M” means the matte type package.
Affix “-TF” means the tape & reel type packing.
2
BC846- BC850 Rev. B
www.fairchildsemi.com
BC846- BC850 NPN Epitaxial Silicon Transistor
Typical Performance Characteristics
100
10000
I
C
[mA], COLLECTOR CURRENT
80
I
B
= 400
µ
A
I
B
= 350
µ
A
V
CE
= 5V
h
FE
, DC CURRENT GAIN
I
B
= 300
µ
A
60
I
B
= 250
µ
A
I
B
= 200
µ
A
1000
40
I
B
= 150
µ
A
I
B
= 100
µ
A
100
20
I
B
= 50
µ
A
0
0
4
8
12
16
20
10
1
10
100
1000
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
I
C
[mA], COLLECTOR CURRENT
Figure 1. Static Characteristic
Figure 2. DC current Gain
V
BE
(sat), V
CE
(sat)[V], SATURATION VOLTAGE
10000
100
I
C
= 10 I
B
1000
V
BE
(sat)
I
C
[mA], COLLECTOR CURRENT
V
CE
= 2V
10
100
1
V
CE
(sat)
10
1
10
100
1000
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
I
C
[mA], COLLECTOR CURRENT
V
BE
[V], BASE-EMITTER VOLTAGE
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 4. Base-Emitter On Voltage
f
T
[MHz], CURRENT GAIN-BANDWIDTH PRODUCT
100
1000
f=1MHz
V
CE
=5V
C
ob
[pF], CAPACITANCE
10
100
1
10
0.1
1
10
100
1000
1
0.1
1
10
100
V
CB
[V], COLLECTOR-BASE VOLTAGE
I
C
[mA], COLLECTOR CURRENT
Figure 5. Collector Output Capacitance
Figure 6. Current Gain Bandwidth Product
3
BC846- BC850 Rev. B
www.fairchildsemi.com
BC846- BC850 NPN Epitaxial Silicon Transistor
Mechanical Dimensions
SOT-23
0.20 MIN
2.40
±0.10
0.40
±0.03
1.30
±0.10
0.45~0.60
0.03~0.10
0.38 REF
0.40
±0.03
0.96~1.14
2.90
±0.10
0.12
–0.023
+0.05
0.95
±0.03
0.95
±0.03
1.90
±0.03
0.508REF
0.97REF
Dimensions in Millimeters
4
BC846- BC850 Rev. B
www.fairchildsemi.com
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