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BC857SD87Z

Description
Small Signal Bipolar Transistor, 0.2A I(C), 45V V(BR)CEO, 2-Element, PNP, Silicon, SC-70, 6 PIN
CategoryDiscrete semiconductor    The transistor   
File Size174KB,8 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Download Datasheet Parametric View All

BC857SD87Z Overview

Small Signal Bipolar Transistor, 0.2A I(C), 45V V(BR)CEO, 2-Element, PNP, Silicon, SC-70, 6 PIN

BC857SD87Z Parametric

Parameter NameAttribute value
MakerFairchild
Parts packaging codeSC-70
package instructionSMALL OUTLINE, R-PDSO-G6
Contacts6
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum collector current (IC)0.2 A
Collector-emitter maximum voltage45 V
ConfigurationSEPARATE, 2 ELEMENTS
Minimum DC current gain (hFE)125
JESD-30 codeR-PDSO-G6
Number of components2
Number of terminals6
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typePNP
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)200 MHz

BC857SD87Z Preview

BC857S
BC857S
E2
B2
C1
SC70-6
Mark: 3C
pin #1
C2
B1
E1
NOTE: The pinouts are symmetrical; pin 1 and pin
4 are interchangeable. Units inside the carrier can
be of either orientation and will not affect the
functionality of the device.
PNP Multi-Chip General Purpose Amplifier
This device is designed for general purpose amplifier applications at collector
currents to 200 mA. Sourced from Process 68.
Absolute Maximum Ratings*
Symbol
V
CEO
V
CES
V
CBO
V
EBO
I
C
T
J
, T
stg
Collector-Base Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
Collector-Emitter Voltage
T
A
= 25°C unless otherwise noted
Parameter
Value
45
50
50
5.0
200
-55 to +150
Units
V
V
V
V
mA
°C
4
Operating and Storage Junction Temperature Range
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1)
These ratings are based on a maximum junction temperature of 150 degrees C.
2)
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
3)
All voltages (V) and currents (A) are negative polarity for PNP transistors.
Thermal Characteristics
Symbol
P
D
R
θJA
T
A
= 25°C unless otherwise noted
Characteristic
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Ambient
Max
BC857S
300
2.4
415
Units
mW
mW/°C
°C/W
1998
Fairchild Semiconductor Corporation
BC857S
PNP Multi-Chip General Purpose Amplifier
(continued)
Electrical Characteristics
Symbol
Parameter
T
A
= 25°C unless otherwise noted
Test Conditions
Min
Typ
Max Units
OFF CHARACTERISTICS
V
(BR)CEO
V
(BR)CES
V
(BR)CBO
V
(BR)EBO
I
CBO
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Cutoff Current
I
C
= 10 mA, I
B
= 0
I
C
= 10
µA,
I
E
= 0
I
C
= 10
µA,
I
E
= 0
I
E
= 10
µA,
I
C
= 0
V
CB
= 30 V
V
CB
= 30 V, T
A
= 150°C
45
50
50
5.0
15
4.0
V
V
V
V
nA
µA
ON CHARACTERISTICS
h
FE
V
CE(
sat
)
V
BE(
on
)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
I
C
= 2.0 mA, V
CE
= 5.0 V
I
C
= 10 mA, I
B
= 0.5 mA
I
C
= 100 mA, I
B
= 5.0 mA
I
C
= 2.0 mA, V
CE
= 5.0 V
I
C
= 10 mA, V
CE
= 5.0 V
125
630
0.3
0.65
0.75
0.82
V
V
V
V
0.6
SMALL SIGNAL CHARACTERISTICS
f
T
C
obo
NF
Current Gain - Bandwidth Product
Output Capacitance
Noise Figure
I
C
= 10 mA, V
CE
= 5.0,
f = 100 mHz
V
CB
= 10 V, f = 1.0 MHz
I
C
= 0.2 mA, V
CE
= 5.0,
R
S
= 2.0 kΩ, f = 1.0 kHz,
BW = 200 Hz
200
3.5
2.5
MHz
pF
dB
NOTE:
All voltages (V) and currents (A) are negative polarity for PNP transistors.
Typical Characteristics
Typical Pulsed Current Gain
vs Collector Current
500
V
CE
= 5V
V
CESAT
- COLLECTOR EMITTE R VOLTAGE (V)
h
FE
- TYPICAL PULSED CURRENT GAIN
Collector-Emitter Saturation
Voltage vs Collector Current
0.3
0.25
0.2
0.15
0.1
0.05
0
0.1
125
°
C
25
°
C
400
300
125 °C
β
= 10
25 °C
200
100
0
0.01
- 40 °C
- 40
°
C
0.1
1
10
100
I
C
- COLLECTOR CURRENT (mA)
1
10
100
I
C
- COLLECTOR CURRE NT (mA)
300
BC857S
PNP Multi-Chip General Purpose Amplifier
(continued)
Typical Characteristics
(continued)
1.2
1
0.8
0.6
0.4
0.2
0
0.1
V
BEON
- BAS E EMITTER ON VOLTAGE (V)
V
BESAT
- BASE EM ITTE R VOLTAGE (V)
Base-Emitter Saturation
Voltage vs Collector Current
β
= 10
Base Emitter ON Voltage vs
Collector Current
1
0.8
0.6
0.4
0.2
0
0.1
V
CE
= 5V
- 40
°
C
25
°
C
125
°
C
- 40
°
C
25
°
C
125
°
C
1
10
100
I
C
- COLLECTOR CURRE NT (mA)
300
1
10
I
C
- COLLECTOR CURRE NT (mA)
100 200
Collector-Cutoff Current
vs Ambient Temperature
I
CBO
- COLLE CTOR CURRENT (nA)
V
CB
= 50V
10
BV
CER
- BREAKDOWN VOLTAGE (V)
100
Collector-Emitter Breakdown
Voltage with Resistance
Between Emitter-Base
95
90
1
85
80
0.1
75
0.01
25
50
75
100
T
A
- AMBIE NT TEMP ERATURE (
°
C)
125
70
0.1
1
10
100
1000
RESISTANCE (k
)
V
CE
- COLLECTOR-EMITTER VOLTAGE (V)
Collector Saturation Region
4
Input and Output Capacitance
vs Reverse Voltage
100
Ta = 25°C
f = 1.0 MHz
3
2
Ic =
100 uA
50 mA
300 mA
CAPACITANCE (pF)
10
Cib
Cob
1
0
100
300
700
2000 4000
0.1
1
10
100
I
B
- BASE CURRENT (uA)
V
CE
- COLLECTOR VOLTAGE (V)
BC857S
PNP Multi-Chip General Purpose Amplifier
(continued)
Typical Characteristics
(continued)
f
T
- GAIN BANDWIDTH PRODUCT (MHz)
Gain Bandwidth Product
vs Collector Current
300
Switching Times vs
Collector Current
270
240
210
TIME (nS)
180
150
120
90
60
30
0
10
td
tf
tr
IB1 = IB2 = Ic / 10
V
cc
= 10 V
40
Vce = 5V
ts
30
20
10
0
1
10
20
50
100 150
I
C
- COLLECTOR CURRENT (mA)
20
30
50
100
200
I
C
- COLLECTOR CURRENT (mA)
300
Power Dissipation vs
Ambient Temperat ure
P
D
- POWE R DIS SIPATION (W)
500
400
SC70 -6
300
200
100
0
0
25
50
75
100
TE MPE RATURE (
°
C)
125
150
SC70-6 Tape and Reel Data
SC70-6 Packaging
Configuration:
Figure 1.0
Customized Label
Packaging Description:
SC70-6 parts are shipped in tape. The carrier tape is
made from a dissipative (carbon filled) polycarbonate
resin. The cover tape is a multilayer film (Heat Activated
Adhesive in nature) primarily composed of polyester film,
adhesive layer, sealant, and anti-static sprayed agent.
These reeled parts in standard option are shipped with
3,000 units per 7" or 177cm diameter reel. The reels are
dark blue in color and is made of polystyrene plastic (anti-
static coated). Other option comes in 10,000 units per 13"
or 330cm diameter reel. This and some other options are
described in the Packaging Information table.
These full reels are individually barcode labeled and
placed inside a pizza box (illustrated in figure 1.0) made of
recyclable corrugated brown paper with a Fairchild logo
printing. One pizza box contains three reels maximum.
And these pizza boxes are placed inside a barcode
labeled shipping box which comes in different sizes
depending on the number of parts shipped.
Antistatic Cover Tape
F63TNR
Static Dissipative
Label
Embossed Carrier Tape
21
21
SC70-6 Packaging Information
Packaging Option
Packaging type
Qty per Reel/Tube/Bag
Reel Size
Box Dimension (mm)
Max qty per Box
Weight per unit (gm)
Weight per Reel (kg)
Note/Comments
Standard
(no flow code)
TNR
3,000
7" Dia
184x187x47
9,000
0.0055
0.1140
D87Z
TNR
10,000
13"
343x343x64
30,000
0.0055
0.3960
21
21
21
Pin 1
SC70-6 Unit Orientation
343mm x 342mm x 64mm
Intermediate box for D87Z Option
F63TNR Barcode Label
F63TNR
Label
F63TNR Label sample
184mm x 187mm x 47mm
Pizza Box for Standard Option
F63TNR
Label
LOT: CBVK741B019
FSID: FDG6302P
QTY: 3000
SPEC:
D/C1: D9842
D/C2:
QTY1:
QTY2:
SPEC REV:
CPN:
N/F: F
(F63TNR)3
SC70-6 Tape Leader and Trailer
Configuration:
Figure 2.0
Carrier Tape
Cover Tape
Components
Trailer Tape
300mm minimum or
75 empty pockets
Leader Tape
500mm minimum or
125 empty pockets
©2000 Fairchild Semiconductor International
August 1999, Rev. C
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