Trench
TM
Power MOSFET
IXTY44N10T
IXTP44N10T
V
DSS
I
D25
R
DS(on)
TO-252
(IXTY)
= 100V
= 44A
30m
N-Channel Enhancement Mode
Avalanche Rated
G
S
D (Tab)
Symbol
V
DSS
V
DGR
V
GSS
V
GSM
I
D25
I
LRMS
I
DM
I
A
E
AS
dv/dt
P
D
T
J
T
JM
T
stg
T
L
T
SOLD
M
d
Weight
Test Conditions
T
J
= 25C to 175C
T
J
= 25C to 175C, R
GS
= 1M
Continuous
Transient
T
C
= 25C
Lead Current Limit, (RMS) (TO-252)
T
C
= 25C, Pulse Width Limited by T
JM
T
C
= 25C
T
C
= 25C
I
S
I
DM
, V
DD
V
DSS
, T
J
175C
T
C
= 25C
Maximum Ratings
100
100
20
30
44
25
110
10
250
12
130
-55 ... +175
175
-55 ... +175
V
V
V
V
A
A
A
A
mJ
V/ns
W
C
C
C
°C
°C
Nm/lb.in.
g
g
TO-220
(IXTP)
G
D
S
D (Tab)
G = Gate
S = Source
D
= Drain
Tab = Drain
Features
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
Mounting Torque (TO-220)
TO-252
TO-220
300
260
1.13 / 10
0.35
3.00
International Standard Packages
175°C Operating Temperature
Avalanche Rated
Low R
DS(on)
High Current Handling Capability
Advantages
Easy to Mount
Space Savings
High Power Density
Symbol
Test Conditions
(T
J
= 25C Unless Otherwise Specified)
BV
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0V, I
D
= 250A
V
DS
= V
GS
, I
D
= 25A
V
GS
=
20V, V
DS
= 0V
V
DS
= V
DSS
, V
GS
= 0V
T
J
= 150C
V
GS
= 10V, I
D
= 0.5 • I
D25
, Notes 1, 2
Characteristic Values
Min. Typ.
Max.
100
2.5
4.5
V
V
Applications
100
nA
1
A
200
A
30 m
Automotive
- Motor Drives
- 24 / 48V Power Bus
- ABS Systems
DC/DC Converters and Off-Line UPS
Primary- Side Switch
High Current Switching Applications
© 2018 IXYS CORPORATION, All Rights Reserved
DS99646B(11/18)
IXTY44N10T
IXTP44N10T
Symbol
Test Conditions
(T
J
= 25C, Unless Otherwise Specified)
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g(on)
Q
gs
Q
gd
R
thJC
R
thCH
TO-220
0.50
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
D25
Resistive Switching Times
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 10A
R
G
= 18 (External)
V
GS
= 0V, V
DS
= 25V, f = 1MHz
V
DS
= 10V, I
D
= 0.5 • I
D25
, Note 1
Characteristic Values
Min. Typ.
Max.
13
21
1567
200
47
21
47
36
32
27.4
8.8
9.0
S
A1
TO-252 AA Outline
A
E
b3
4
A
L3
c2
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
1.15
C/W
C/W
L4
1
2
3
L1
A2
L
L2
c
H
e
e1
e1
OPTIONAL
b2
0
5.55MIN
1 - Gate
2,4 - Drain
3 - Source
6.50MIN
4
6.40
2.85MIN
BOTTOM
VIEW
2.28
1.25MIN
LAND PATTERN RECOMMENDATION
Source-Drain Diode
Symbol
Test Conditions
(T
J
= 25C, Unless Otherwise Specified)
I
S
I
SM
V
SD
t
rr
I
RM
Q
RM
V
GS
= 0V
Repetitive, Pulse Width Limited by T
JM
I
F
= 22A, V
GS
= 0V, Note 1
I
F
= 0.5 • I
D25
, V
GS
= 0V
-di/dt = 100A/s
V
R
= 50V
60
4.8
144
Characteristic Values
Min. Typ.
Max.
44
140
1.1
A
A
V
ns
A
nC
EJECTOR
PIN
TO-220 Outline
E
oP
A
A1
Q
D
D1
H1
D2
E1
A2
L1
L
e
e1
c
3X b
3X b2
Notes: 1.
Pulse test, t
300s, duty cycle, d
2%.
2. On through-hole packages, R
DS(on)
Kelvin test contact
location must be 5mm or less from the package body.
1 - Gate
2,4 - Drain
3 - Source
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or more of the following U.S. patents: 4,860,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
7,157,338B2
IXTY44N10T
IXTP44N10T
Fig. 1. Output Characteristics @ T
J
= 25
o
C
45
40
35
30
7V
80
V
GS
= 10V
9V
120
V
GS
= 10V
8V
100
9V
Fig. 2. Extended Output Characteristics @ T
J
= 25 C
o
I
D
- Amperes
25
20
15
10
5
6V
I
D
- Amperes
60
8V
40
7V
20
6V
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
0
0
5
10
15
20
V
DS
- Volts
V
DS
- Volts
o
Fig. 3. Output Characteristics @ T
J
= 150 C
45
40
35
30
V
GS
= 10V
9V
8V
3.0
2.6
2.2
Fig. 4. R
DS(on)
Normalized to I
D
= 22A Value vs.
Junction Temperature
V
GS
= 10V
R
DS(on)
- Normalized
I
D
- Amperes
I
D
= 44A
1.8
1.4
1.0
0.6
0.2
I
D
= 22A
25
20
15
10
5
0
0.0
0.4
0.8
1.2
1.6
2.0
2.4
7V
6V
5V
2.8
3.2
-50
-25
0
25
50
75
100
125
150
175
V
DS
- Volts
T
J
- Degrees Centigrade
4.2
3.8
3.4
Fig. 5. R
DS(on)
Normalized to I
D
= 22A Value vs.
Drain Current
50
V
GS
= 10V
15V
45
T
J
= 175 C
o
Fig. 6. Drain Current vs. Case Temperature
40
35
R
DS(on)
- Normalized
3.0
I
D
- Amperes
2.6
2.2
1.8
1.4
1.0
0.6
0
10
20
30
40
50
60
70
80
90
100
110
T
J
= 25 C
o
30
25
20
15
10
5
0
-50
-25
0
25
50
75
100
125
150
175
External Lead Current Limit ( TO-252)
I
D
- Amperes
T
C
- Degrees Centigrade
© 2018 IXYS CORPORATION, All Rights Reserved
IXTY44N10T
IXTP44N10T
Fig. 7. Input Admittance
70
60
50
30
T
J
= - 40 C
25 C
o
o
Fig. 8. Transconductance
T
J
= - 40 C
25 C
o
o
25
40
30
20
10
0
4.0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
9.0
g
f s
- Siemens
I
D
- Amperes
150 C
o
20
15
150 C
o
10
5
0
0
10
20
30
40
50
60
70
V
GS
- Volts
I
D
- Amperes
Fig. 9. Forward Voltage Drop of Intrinsic Diode
120
10
9
100
8
7
V
DS
= 50V
I
D
= 22A
I
G
= 1mA
Fig. 10. Gate Charge
I
S
- Amperes
80
V
GS
- Volts
T
J
= 150 C
o
6
5
4
3
60
40
o
20
T
J
= 25 C
2
1
0
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
0
0
4
8
12
16
20
24
V
SD
- Volts
Q
G
- NanoCoulombs
Fig. 11. Capacitance
10,000
1,000
Fig. 12. Forward-Bias Safe Operating Area
f
= 1 MHz
Capacitance - PicoFarads
Ciss
1,000
100
R
DS(on)
Limit
DC
10ms
1ms
100μs
25μs
I
D
- Amperes
Coss
100
Crss
10
1
T
J
= 175 C
T
C
= 25 C
Single Pulse
o
o
10
0
5
10
15
20
25
30
35
40
0
1
10
100
V
DS
- Volts
V
DS
- Volts
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTY44N10T
IXTP44N10T
Fig. 13. Resistive Turn-on Rise Time vs.
Junction Temperature
80
70
60
50
I
D
= 30A
40
30
20
10
25
35
45
55
65
75
85
95
105
115
125
I
D
= 10A
20
10
10
12
14
16
18
20
22
24
26
28
30
R
G
= 18ΩV
GS
= 10V
V
DS
= 50V
90
80
70
Fig. 14. Resistive Turn-on Rise Time vs.
Drain Current
R
G
= 18Ω ,V
GS
= 10V
V
DS
= 50V
T
J
= 25 C
o
t
r
- Nanoseconds
t
r
- Nanoseconds
60
50
40
30
T
J
= 125 C
o
T
J
- Degrees Centigrade
I
D
- Amperes
Fig. 15. Resistive Turn-on Switching Times vs.
Gate Resistance
130
40
38
36
34
Fig. 16. Resistive Turn-off Switching Times vs.
Junction Temperature
55
t
r
110
o
t
d(on)
36
T
J
= 125 C, V
GS
= 10V
V
DS
= 50V
t
f
V
DS
= 50V
t
d(off)
50
45
I
D
= 10A
40
35
30
I
D
= 30A
25
20
125
R
G
= 18Ω, V
GS
= 10V
t
d(on)
- Nanoseconds
t
d(off)
- Nanoseconds
t
r
- Nanoseconds
I
D
= 30A
70
I
D
= 10A
28
t
f
- Nanoseconds
90
32
32
30
28
26
24
25
35
45
55
65
75
85
95
105
115
50
24
30
20
10
15
20
25
30
35
40
45
50
55
60
16
R
G
- Ohms
T
J
- Degrees Centigrade
Fig. 17. Resistive Turn-off Switching Times vs.
Drain Current
34
33
32
52
100
90
80
Fig. 18. Resistive Turn-off Switching Times vs.
Gate Resistance
t
f
o
110
100
90
t
f
V
DS
= 50V
t
d(off)
R
G
= 18Ω, V
GS
= 10V
48
44
t
d(off)
T
J
= 125 C, V
GS
= 10V
V
DS
= 50V
t
d(off)
- Nanoseconds
t
d(off)
- Nanoseconds
t
f
- Nanoseconds
t
f
- Nanoseconds
31
30
29
28
T
J
= 125 C
o
40
36
32
28
70
60
I
D
= 10A
50
40
30
20
15
20
25
30
35
40
45
50
55
60
I
D
= 30A
80
70
60
50
40
30
T
J
= 25 C
27
26
10
12
14
16
18
20
22
24
26
28
30
24
20
o
I
D
- Amperes
R
G
- Ohms
© 2018 IXYS CORPORATION, All Rights Reserved
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