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M29W800AB80M5

Description
Flash, 512KX16, 80ns, PDSO44, 0.525 INCH, PLASTIC, SO-44
Categorystorage    storage   
File Size721KB,40 Pages
ManufacturerNumonyx ( Micron )
Websitehttps://www.micron.com
Environmental Compliance
Download Datasheet Parametric View All

M29W800AB80M5 Overview

Flash, 512KX16, 80ns, PDSO44, 0.525 INCH, PLASTIC, SO-44

M29W800AB80M5 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerNumonyx ( Micron )
Parts packaging codeSOIC
package instructionSOP,
Contacts44
Reach Compliance Codecompliant
ECCN codeEAR99
Maximum access time80 ns
Other features20 YEARS DATA RETENTION; BOTTOM BOOT BLOCK
Spare memory width8
startup blockBOTTOM
Data retention time - minimum20
JESD-30 codeR-PDSO-G44
JESD-609 codee3
length28.2 mm
memory density8388608 bit
Memory IC TypeFLASH
memory width16
Number of functions1
Number of terminals44
word count524288 words
character code512000
Operating modeASYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-20 °C
organize512KX16
Package body materialPLASTIC/EPOXY
encapsulated codeSOP
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Parallel/SerialPARALLEL
Programming voltage3 V
Certification statusNot Qualified
Maximum seat height2.8 mm
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)3 V
Nominal supply voltage (Vsup)3.3 V
surface mountYES
technologyCMOS
Temperature levelOTHER
Terminal surfaceMatte Tin (Sn)
Terminal formGULL WING
Terminal pitch1.27 mm
Terminal locationDUAL
typeNOR TYPE
width13.3 mm
M29W800AT
M29W800AB
8 Mbit (1Mb x8 or 512Kb x16, Boot Block)
Low Voltage Single Supply Flash Memory
FEATURES SUMMARY
2.7V to 3.6V SUPPLY VOLTAGE for
PROGRAM, ERASE and READ
OPERATIONS
ACCESS TIME: 80ns
PROGRAMMING TIME: 10µs typical
PROGRAM/ERASE CONTROLLER (P/E.C.)
– Program Byte-by-Byte or Word-by-Word
– Status Register bits and Ready/Busy
Output
SECURITY PROTECTION MEMORY AREA
INSTRUCTION ADDRESS CODING: 3 digits
MEMORY BLOCKS
– Boot Block (Top or Bottom location)
– Parameter and Main blocks
BLOCK, MULTI-BLOCK and CHIP ERASE
MULTI BLOCK PROTECTION/TEMPORARY
UNPROTECTION MODES
ERASE SUSPEND and RESUME MODES
– Read and Program another Block during
Erase Suspend
LOW POWER CONSUMPTION
– Stand-by and Automatic Stand-by
100,000 PROGRAM/ERASE CYCLES per
BLOCK
20 YEARS DATA RETENTION
– Defectivity below 1ppm/year
ELECTRONIC SIGNATURE
– Manufacturer Code: 20h
– Top Device Code, M29W800AT: D7h
– Bottom Device Code, M29W800AB: 5Bh
Figure 1. Packages
FBGA
TSOP48 (N)
12 x 20mm
TFBGA48 (ZA)
8 x 6 solder balls
SO44 (M)
Figure 2. Logic Diagram
VCC
19
A0-A18
W
E
G
RP
M29W800AT
M29W800AB
15
DQ0-DQ14
DQ15A–1
BYTE
RB
VSS
AI02599
March 2004
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