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M29F002T-70XP1

Description
256KX8 FLASH 5V PROM, 70ns, PDIP32, 0.600 INCH, PLASTIC, DIP-32
Categorystorage    storage   
File Size232KB,29 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
Download Datasheet Parametric View All

M29F002T-70XP1 Overview

256KX8 FLASH 5V PROM, 70ns, PDIP32, 0.600 INCH, PLASTIC, DIP-32

M29F002T-70XP1 Parametric

Parameter NameAttribute value
MakerSTMicroelectronics
Parts packaging codeDIP
package instruction0.600 INCH, PLASTIC, DIP-32
Contacts32
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum access time70 ns
Other featuresTOP BOOT BLOCK
startup blockTOP
JESD-30 codeR-PDIP-T32
length41.91 mm
memory density2097152 bit
Memory IC TypeFLASH
memory width8
Number of functions1
Number of terminals32
word count262144 words
character code256000
Operating modeASYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize256KX8
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeDIP
Package shapeRECTANGULAR
Package formIN-LINE
Parallel/SerialPARALLEL
Programming voltage5 V
Certification statusNot Qualified
Maximum seat height5.08 mm
Maximum supply voltage (Vsup)5.25 V
Minimum supply voltage (Vsup)4.75 V
Nominal supply voltage (Vsup)5 V
surface mountNO
technologyCMOS
Temperature levelCOMMERCIAL
Terminal formTHROUGH-HOLE
Terminal pitch2.54 mm
Terminal locationDUAL
typeNOR TYPE
width15.24 mm
M29F002T, M29F002NT
M29F002B
2 Mbit (256Kb x8, Boot Block) Single Supply Flash Memory
NOT FOR NEW DESIGN
M29F002T, M29F002NT and M29F002B are
replaced respectively by the M29F002BT,
M29F002BNT and M29F002BB.
5V
±
10% SUPPLY VOLTAGE for PROGRAM,
ERASE and READ OPERATIONS
FAST ACCESS TIME: 70ns
FAST PROGRAMMING TIME: 10µs typical
PROGRAM/ERASE CONTROLLER (P/E.C.)
– Program Byte-by-Byte
– Status Register bits
MEMORY BLOCKS
– Boot Block (Top or Bottom location)
– Parameter and Main blocks
BLOCK, MULTI-BLOCK and CHIP ERASE
MULTI-BLOCK PROTECTION/TEMPORARY
UNPROTECTION MODES
ERASE SUSPEND and RESUME MODES
– Read and Program another Block during
Erase Suspend
LOW POWER CONSUMPTION
– Stand-by and Automatic Stand-by
100,000 PROGRAM/ERASE CYCLES per
BLOCK
20 YEARS DATA RETENTION
– Defectivity below 1ppm/year
ELECTRONIC SIGNATURE
– Manufacturer Code: 20h
– Device Code, M29F002T: B0h
– Device Code, M29F002NT: B0h
– Device Code, M29F002B: 34h
DESCRIPTION
The M29F002 is a non-volatile memory that may be
erased electrically at the block or chip level and
programmed in-system on a Byte-by-Byte basis
using only a single 5V V
CC
supply. For Program and
Erase operations the necessary high voltages are
generated internally. The device can also be pro-
grammed in standard programmers.
The array matrix organisation allows each block to
be erased and reprogrammed without affecting
other blocks. Blocks can be protected against pro-
graming and erase on programming equipment,
and temporarily unprotected to make changes in
July 2000
This is information on a product still in production but not recommended for new design.
32
1
PDIP32 (P)
PLCC32 (K)
TSOP32 (N)
8 x 20mm
Figure 1. Logic Diagram
VCC
18
A0-A17
W
E
G
(*) RPNC
M29F002T
M29F002B
M29F002NT
8
DQ0-DQ7
VSS
AI02078C
Note:
* RPNC function is not available for the M29F002NT
1/29
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