UNISONIC TECHNOLOGIES CO., LTD
81CXX/81NXX
VOLTAGE DETECTORS WITH
BUILT-IN DELAY TIME
DESCRIPTION
CMOS IC
The UTC
81CXX
and
81NXX
series are good performance
voltage detector and manufactured by CMOS technologies with
highly accurate, low power consumption. A delay circuit is built-in
to each detector, therefore, peripherals are unnecessary and high
density mounting is possible. Detect voltage is extremely accurate
with minimal temperature drift. Both CMOS and N-channel open
drain output configurations are available.
FEATURES
Detect voltage ± 2%
1ms ~ 50ms
50ms ~ 200ms
200ms ~ 400ms
* Highly Accurate:
* Built-In Delay time :
* Detect Voltage Temperature
Characteristics:
TYP± 100ppm/°C
* Wide Operating Voltage Range : 0.7V ~ 10.0V
* Low Current Consumption :
TYP 1.0μA (V
IN
=2.0V)
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
81CXXG-①-AA3-B-R
-
81CXXG-①-AB3-E-R
-
81CXXG-①-AE3-3-R
-
81CXXG-①-AE3-5-R
-
81CXXG-①-AE3-2-R
-
81CXXL-①-T92-D-B
81CXXG-①-T92-D-B
81CXXL-①-T92-E-B
81CXXG-①-T92-E-B
81CXXL-①-T92-D-K
81CXXG-①-T92-D-K
81CXXL-①-T92-E-K
81CXXG-①-T92-E-K
①:Delay
Time
Duration
Code
Pin Assignment
1
2
3
O
G
I
O
I
G
O
G
I
G
O
I
I
O
G
I
G
O
O
I
G
I
G
O
O
I
G
CMOS:
Package
SOT-223
SOT-89
SOT-23
SOT-23
SOT-23
TO-92
TO-92
TO-92
TO-92
Packing
Tape Reel
Tape Reel
Tape Reel
Tape Reel
Tape Reel
Tape Box
Tape Box
Bulk
Bulk
ms
1~50
50~200 ms
200~400 ms
P
Q
R
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QW-R502-039.T
81CXX/81NXX
ORDERING INFORMATION(Cont.)
Pin Assignment
1
2
3
O
G
I
O
I
G
O
G
I
G
O
I
I
O
G
I
G
O
O
I
G
I
G
O
O
I
G
N-Channel:
Ordering Number
①:Delay
Time
Lead Free
Halogen Free
Duration
Code
-
81NXXG-①-AA3-B-R
-
81NXXG-①-AB3-E-R
-
81NXXG-①-AE3-3-R
-
81NXXG-①-AE3-5-R
1~50
ms H
-
81NXXG-①-AE3-2-R 50~200 ms J
81NXXL-①-T92-D-B
81NXXG-①-T92-D-B 200~400 ms K
81NXXL-①-T92-E-B
81NXXG-①-T92-E-B
81NXXL-①-T92-D-K
81NXXG-①-T92-D-K
81NXXL-①-T92-E-K
81NXXG-①-T92-E-K
Note: 1. Pin assignment: I:V
IN
O:V
OUT
G:V
SS
2. XX: Output Voltage, refer to Marking Information.
Package
SOT-223
SOT-89
SOT-23
SOT-23
SOT-23
TO-92
TO-92
TO-92
TO-92
CMOS IC
Packing
Tape Reel
Tape Reel
Tape Reel
Tape Reel
Tape Reel
Tape Box
Tape Box
Bulk
Bulk
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QW-R502-039.T
81CXX/81NXX
MARKING INFORMATION
VOLTAGE CODE
MARKING
PACKAGE
CMOS IC
SOT-223
SOT-89
TO-92
10:1.0V
11:1.1V
12:1.2V
13:1.3V
14:1.4V
15:1.5V
16:1.6V
17:1.7V
18:1.8V
19:1.9V
20:2.0V
21:2.1V
22:2.2V
23:2.3V
24:2.4V
25:2.5V
26:2.6V
27:2.7V
28:2.8V
29:2.9V
30:3.0V
31:3.1V
32:3.2V
33:3.3V
34:3.4V
35:3.5V
36:3.6V
37:3.7V
38:3.8V
39:3.9V
40:4.0V
41:4.1V
42:4.2V
43:4.3V
44:4.4V
45:4.5V
46:4.6V
47:4.7V
48:4.8V
49:4.9V
50:5.0V
C: CMOS
N: N-Channel
Pin Code
UTC
81XXX
L: Lead Free
G: Halogen Free
Voltage Code
Date Code
3
1
PACKAGE
DECIMAL
INTEGER
CODE
CODE
(Note 2)
(Note 1)
1.
1
.0
A
2.
2
.1
B
3.
3
.2
C
C: CMOS
4.
4
.3
D
N: N-Channel
5.
5
.4
E
SOT-23
Voltage Code
6.
6
.5
F
.6
G
.7
H
.8
J
.9
K
Notes: 1. Represents the integer of the Detect Voltage
2. Represents the decimal number of the Detect Voltage
2
MARKING
3
XX
G
Pin Code
2
1
EXAMPLE:
81C27
3
C: CMOS
Voltage Code
2HC G
2
1
Pin Code
G: Halogen Free
N: N-Channel
Voltage Code
81N27
3
2HN G
2
1
Pin Code
G: Halogen Free
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QW-R502-039.T
81CXX/81NXX
BLOCK DIAGRAM
CMOS IC
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QW-R502-039.T
81CXX/81NXX
ABSOLUTE MAXIMUM RATINGS
(T
A
=25°C)
PARAMETER
SYMBOL
V
IN
I
OUT
CMOS IC
RATINGS
UNIT
Input Voltage
12
V
Output Current
50
mA
CMOS
V
SS
-0.3 ~ V
IN
+0.3
V
Output Voltage
V
OUT
N-Ch open drain
V
SS
-0.3 ~ 9
V
SOT-223
800
SOT-23
150
Power Dissipation
P
D
mW
SOT-89
500
TO-92
300
Operating Temperature
T
OPR
-30 ~ +85
°C
Storage Temperature
T
STG
-40 ~ +125
°C
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
SYMBOL
θ
JC
RATINGS
20
200
45
100
UNIT
°C/W
PARAMETER
SOT-223
SOT-23
Junction to Case
SOT-89
TO-92
ELECTRICAL CHARACTERISTICS
(T
A
=25°C)
CIRCUIT
1
1
1
2
3
I
OUT
∆V
DF
∆T
OPR ×
V
DF
Detection voltage (1.0V ~ 1.9V)
PARAMETER
SYMBOL
Detect Voltage
Hysteresis Range
Operating Voltage
Supply Current
N-Channel
Output Current
P- Channel
V
DF
V
HYS
V
IN
I
SS
TEST CONDITIONS
4
V
DF
=1.6V ~ 6.0V
V
IN
=1.5V
V
IN
=5.0
V
DS
=0.5V, V
IN
=1.0V
V
DS
=2.1V, V
IN
=8.0V
(CMOS output)
MIN
TYP
MAX UNIT
V
DF
(T)
V
DF
(T)
V
DF
(T)
V
×0.98
×1.02
V
DF
V
DF
V
DF
V
×0.02 ×0.05 ×0.08
0.7
10.0
V
0.9
2.6
μA
2.0
4.2
μA
2.2
mA
-15.4
±100
mA
ppm/°C
200
ms
V
DF
Temperature Characteristics
Transient Delay Time
(V
DR
V
OUT
inversion)
t
DLY
*
5
V
IN
changes from
0.6V ~ 10V
50
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QW-R502-039.T
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