BC850A(SOT-23) datasheet, PDF - EEWORLD Datasheet

Datasheet> All Categories > Discrete semiconductor> The transistor> BC850A(SOT-23)

BC850A(SOT-23): DescriptionSmall Signal Bipolar Transistor, 0.1A I(C), NPN; CategoryDiscrete semiconductor The transistor; File Size102KB，4 Pages; ManufacturerUNISONIC TECHNOLOGIES CO.,LTD; Websitehttp://www.unisonic.com.tw/

Download Datasheet Parametric Compare View All

BC850A(SOT-23) Overview

Small Signal Bipolar Transistor, 0.1A I(C), NPN

BC850A(SOT-23) Parametric

Parameter Name	Attribute value
Maker	UNISONIC TECHNOLOGIES CO.,LTD
package instruction	SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code	compliant
Maximum collector current (IC)	0.1 A
Collector-emitter maximum voltage	45 V
Configuration	SINGLE
Minimum DC current gain (hFE)	110
JESD-30 code	R-PDSO-G3
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	NPN
Maximum power dissipation(Abs)	0.31 W
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	300 MHz

Preview

Download Datasheet

View All

UTC BC846/BC847/BC848/BC849/BC850

NPN EPITAXIAL SILICON TRANSISTOR

SWITCHING AND AMPLIFIER

APPLICATION

FEATURES

*Suitable for automatic insertion in thick and thin-film

circuits.

*Complement to BC856 … BC860

SOT-23

1: EMITTER

2: BASE

3: COLLECTOR

ABSOLUTE MAXIMUM RATINGS

(Ta=25°C, unless otherwise noted)

PARAMETER

Collector-Base Voltage

BC846

BC847 / BC850

BC848 / BC849

Collector-Emitter Voltage

BC846

BC847 / BC850

BC848 / BC849

Emitter-Base Voltage

BC846 / BC847

BC848 / BC849 / BC850

Collector Current (DC)

Collector Dissipation

Junction Temperature

Storage Temperature

SYMBOL

CBO

VALUE

UNIT

CEO

EBO

100

310

150

-65 ~ +150

°C

stg

ELECTRICAL CHARACTERISTICS

(Ta=25°C, unless otherwise noted)

PARAMETER

Collector Cut-Off Current

DC Current Gain

Collector-Emitter Saturation

Voltage

SYMBOL

CBO

(sat)

TEST CONDITIONS

=30V, I

=5.0V, Ic=2.0mA

Ic=10mA,I

=0.5mA

Ic=100mA,I

=5.0mA

MIN

110

TYP

MAX

800

250

600

UNITS

200

UTC

UNISONIC TECHNOLOGIES CO. LTD

QW-R206-027,A

BC850A(SOT-23) Related Products

	BC850A(SOT-23)	BC846C(SOT-23)	BC849A(SOT-23)	BC847C(SOT-23)	BC846A(SOT-23)	BC847A(SOT-23)
Description	Small Signal Bipolar Transistor, 0.1A I(C), NPN	Small Signal Bipolar Transistor, 0.1A I(C), NPN	Small Signal Bipolar Transistor, 0.1A I(C), NPN	Small Signal Bipolar Transistor, 0.1A I(C), NPN,	Small Signal Bipolar Transistor, 0.1A I(C), NPN	Small Signal Bipolar Transistor, 0.1A I(C), NPN
package instruction	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code	compliant	compliant	compliant	compliant	compliant	compli
Maximum collector current (IC)	0.1 A	0.1 A	0.1 A	0.1 A	0.1 A	0.1 A
Collector-emitter maximum voltage	45 V	65 V	30 V	45 V	65 V	45 V
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	110	420	110	420	110	110
JESD-30 code	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3
Number of components	1	1	1	1	1	1
Number of terminals	3	3	3	3	3	3
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Polarity/channel type	NPN	NPN	NPN	NPN	NPN	NPN
Maximum power dissipation(Abs)	0.31 W	0.31 W	0.31 W	0.31 W	0.31 W	0.31 W
surface mount	YES	YES	YES	YES	YES	YES
Terminal form	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	300 MHz	300 MHz	300 MHz	300 MHz	300 MHz	300 MHz
Maker	UNISONIC TECHNOLOGIES CO.,LTD	-	UNISONIC TECHNOLOGIES CO.,LTD	UNISONIC TECHNOLOGIES CO.,LTD	UNISONIC TECHNOLOGIES CO.,LTD	UNISONIC TECHNOLOGIES CO.,LTD

Recommended Resources

CTX-C2 dual-band high-resolution color display power circuit

Adjustable frequency oscillator.gif

Analog target shooting game console circuit

555 indoor humidity control circuit

Ordinary thyristor single-phase control circuit

845ddr computer motherboard circuit diagram_41

Shortcut: 00 01 02 03 04 05 06 07 08 09 0A 0C 0F 0J 0L 0M 0R 0S 0T 0Z 10 11 12 13 14 15 16 17 18 19 1A 1B 1C 1D 1E 1F 1H 1K 1M 1N 1P 1S 1T 1V 1X 1Z 20 21 22 23 24 25 26 27 28 29 2A 2B 2C 2D 2E 2F 2G 2K 2M 2N 2P 2Q 2R 2S 2T 2W 2Z 30 31 32 33 34 35 36 37 38 39 3A 3B 3C 3D 3E 3F 3G 3H 3J 3K 3L 3M 3N 3P 3R 3S 3T 3V 40 41 42 43 44 45 46 47 48 49 4A 4B 4C 4D 4M 4N 4P 4S 4T 50 51 52 53 54 55 56 57 58 59 5A 5B 5C 5E 5G 5H 5K 5M 5N 5P 5S 5T 5V 60 61 62 63 64 65 66 67 68 69 6A 6C 6E 6F 6M 6N 6P 6R 6S 6T 70 71 72 73 74 75 76 77 78 79 7A 7B 7C 7M 7N 7P 7Q 7V 7W 7X 80 81 82 83 84 85 86 87 88 89 8A 8D 8E 8L 8N 8P 8S 8T 8W 8Y 8Z 90 91 92 93 94 95 96 97 98 99 9A 9B 9C 9D 9F 9G 9H 9L 9S 9T 9W

Popular Components