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BUL1203G-TA3-T

Description
Transistor
CategoryDiscrete semiconductor    The transistor   
File Size220KB,5 Pages
ManufacturerUNISONIC TECHNOLOGIES CO.,LTD
Websitehttp://www.unisonic.com.tw/
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BUL1203G-TA3-T Overview

Transistor

BUL1203G-TA3-T Parametric

Parameter NameAttribute value
MakerUNISONIC TECHNOLOGIES CO.,LTD
package instructionFLANGE MOUNT, R-PSFM-T3
Reach Compliance Codecompliant
Maximum collector current (IC)4 A
Collector-emitter maximum voltage550 V
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum DC current gain (hFE)12
Maximum landing time (tf)300 ns
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeNPN
Maximum power dissipation(Abs)70 W
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Maximum off time (toff)2800 ns
VCEsat-Max1.5 V

BUL1203G-TA3-T Preview

UNISONIC TECHNOLOGIES CO., LTD
BUL1203
HIGH VOLTAGE
FAST-SWITCHING NPN
POWER TRANSISTOR
DESCRIPTION
The
BUL1203
is manufactured by using high voltage
Planar technology for high voltage capability and high
switching speeds..
NPN SILICON TRANSISTOR
FEATURES
* BV
CES
up to 1400V.
* Better distribution of Dynamic parameters and lot to lot
spread
* High switching speed
Lead-free:
BUL1203L
Halogen-free: BUL1203G
ORDERING INFORMATION
Normal
BUL1203-TA3-T
Ordering Number
Lead Free Plating
BUL1203L-TA3-T
Halogen-Free
BUL1203G-TA3-T
Package
TO-220
Pin Assignment
1
2
3
B
C
E
Packing
Tube
www.unisonic.com.tw
Copyright © 2009 Unisonic Technologies Co., Ltd
1 of 5
QW-R203-038.A
BUL1203
ABSOLUTE MAXIMUM RATINGS
NPN SILICON TRANSISTOR
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Emitter Voltage (V
BE
= 0)
V
CES
1400
V
Collector-Emitter Voltage (I
B
= 0)
V
CEO
550
V
Emitter-Base Voltage (I
C
= 0)
V
EBO
12
V
Collector Current
I
C
4
A
Collector Peak Current (t
p
<5 ms)
I
CM
8
A
Base Current
I
B
2
A
Base Peak Current (t
p
<5 ms)
I
BM
4
A
Total Dissipation at T
C
= 25℃
P
D
70
W
+150
Junction Temperature
T
J
-65 ~
+150
Storage Temperature
T
STG
Note: Absolute maximum ratings are the values beyond which the device will be damaged permanently.
Absolute maximum ratings are only stress ratings and it is not implied for functional device operation.
THERMAL DATA
PARAMETER
Thermal Resistance Junction-Case
SYMBOL
θ
JC
MIN
TYP
MAX
1.78
UNIT
℃/W
ELECTRICAL CHARACTERISTICS
(T
c
= 25℃ unless otherwise specified)
PARAMETER
Collector Cut-off Current (V
BE
= 0)
Emitter Cut-off Current (I
B
= 0)
Collector-Emitter Sustaining Voltage
(I
B
= 0)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
DC Current Gain
SYMBOL
I
CES
I
EBO
V
CEO(SUS)
(Note)
V
CE(SAT)
(Note)
V
BE(SAT)
(Note)
h
FE
(Note)
TEST CONDITIONS
V
CE
= 1400 V
V
EB
= 12 V
I
C
= 100 mA
I
C
= 2 A, I
B
= 400 mA
I
C
= 2 A, I
B
= 400 mA
35
12
MIN
TYP
MAX
100
1
UNIT
µA
mA
V
1.5
1.5
70
20
2.5
300
6
µs
ns
mJ
V
V
550
I
C
= 250 mA, V
CE
= 5 V
I
C
= 2 A, V
CE
= 5 V
I
C
= 2.5 A, V
CC
= 250 V
Resistive Load:
I
B1
= 0.5 A, I
B2
= 1 A
t
S
Storage Time
T
P
= 30 ms
Fall Time
t
F
L = 2 mH, C = 1.8 nF
Avalanche Energy
E
AR
I
BR
2.5A, 25℃< T
C
<125℃
Note: Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 5
QW-R203-038.A
BUL1203
TEST CIRCUITS
V
CC
C
NPN SILICON TRANSISTOR
L=2mH
I
BR
T1
5V
V
IN
T.U.T
R
g
T
P
Figure 1. Energy Rating Test Circuit
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 5
QW-R203-038.A
BUL1203
TYPICAL CHARACTERISTICS
Safe Operating Areas
10
2
NPN SILICON TRANSISTOR
Derating Curve
%
10
1
Collector Current,I
C
(A)
I
C
MAX
PULSED
10µS
PULSE OPERATION
100
10
0
I
C
MAX
CONT
100µS
I
S/B
50
P
TOT
10
-1
D.C. OPERATION
* For single non
Repetitive pulse
500µS
1ms
10
-2
10
0
10
1
10
2
10
3
0
50
100
T
C
(℃)
Collector-Emitter Voltage(V)
DC Current Gain h
FE
Collector Emitter Saturation Voltage
10
Collector Emitter Saturation Voltage, V
CE
1
DC Current Gain h
FE
Base Emitter Saturation Voltage
1.1
BaseVoltage Emitter Saturation, V
BE
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
10
-2
h
FE
=5
10
0
T
J
=25℃
10
-1
T
J
=25℃
h
FE
=5
10
-2
10
-2
10
10
Collector Current, I
C
(A)
-1
0
10
1
10
-1
10
0
Collector Current, I
C
(A)
10
1
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
4 of 5
QW-R203-038.A
BUL1203
TYPICAL CHARACTERISTICS(Cont.)
NPN SILICON TRANSISTOR
Switching Time Resistive Load, t(ns)
Reverse Biased SOA
5
4
Collector Current I
C
(A)
3
2
1
h
FE
=5
V
BB(OFF)
=-5V
R
BB(OFF)
=0Ω
0
0
200 400 600 800 1000 1200 1400
Collector Emitter Saturation Voltage V
CE
(V)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
Switching Time Resistive Load, t(ns)
5 of 5
QW-R203-038.A

BUL1203G-TA3-T Related Products

BUL1203G-TA3-T BUL1203-TA3-T BUL1203L-TA3-T
Description Transistor Transistor Transistor
Maker UNISONIC TECHNOLOGIES CO.,LTD UNISONIC TECHNOLOGIES CO.,LTD UNISONIC TECHNOLOGIES CO.,LTD
package instruction FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code compliant compliant compliant
Maximum collector current (IC) 4 A 4 A 4 A
Collector-emitter maximum voltage 550 V 550 V 550 V
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum DC current gain (hFE) 12 12 12
Maximum landing time (tf) 300 ns 300 ns 300 ns
JEDEC-95 code TO-220AB TO-220AB TO-220AB
JESD-30 code R-PSFM-T3 R-PSFM-T3 R-PSFM-T3
Number of components 1 1 1
Number of terminals 3 3 3
Maximum operating temperature 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
Polarity/channel type NPN NPN NPN
Maximum power dissipation(Abs) 70 W 70 W 70 W
surface mount NO NO NO
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE SINGLE
transistor applications SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON
Maximum off time (toff) 2800 ns 2800 ns 2800 ns
VCEsat-Max 1.5 V 1.5 V 1.5 V
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