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RB751 series
Schottky barrier single diodes
Rev. 01 — 21 May 2007
Product data sheet
1. Product profile
1.1 General description
Planar Schottky barrier single diodes with an integrated guard ring for stress protection,
encapsulated in small Surface-Mounted Device (SMD) plastic packages.
Table 1.
Product overview
Package
NXP
RB751CS40
RB751S40
RB751V40
SOD882
SOD523
SOD323
JEITA
-
SC-79
SC-76
Package
configuration
leadless ultra small
ultra small
very small
Type number
1.2 Features
I
Low forward voltage
I
Low capacitance
1.3 Applications
I
I
I
I
Ultra high-speed switching
Voltage clamping
Line termination
Reverse polarity protection
1.4 Quick reference data
Table 2.
Symbol
I
F
V
RRM
V
F
[1]
Quick reference data
Parameter
forward current
repetitive peak reverse
voltage
forward voltage
I
F
= 1 mA
[1]
Conditions
Min
-
-
-
Typ
-
-
-
Max
120
40
370
Unit
mA
V
mV
Pulse test: t
p
≤
300
µs; δ ≤
0.02.
NXP Semiconductors
RB751 series
Schottky barrier single diodes
2. Pinning information
Table 3.
Pin
SOD882
1
2
cathode
anode
[1]
Pinning
Description
Simplified outline
Symbol
1
1
2
2
sym001
Transparent
top view
SOD323; SOD523
1
2
cathode
anode
[1]
1
1
001aab540
2
sym001
2
[1]
The marking bar indicates the cathode.
3. Ordering information
Table 4.
Ordering information
Package
Name
RB751CS40
RB751S40
RB751V40
-
SC-79
SC-76
Description
leadless ultra small plastic package; 2 terminals;
body 1.0
×
0.6
×
0.5 mm
plastic surface-mounted package; 2 leads
plastic surface-mounted package; 2 leads
Version
SOD882
SOD523
SOD323
Type number
4. Marking
Table 5.
Marking codes
Marking code
F6
G4
W8
Type number
RB751CS40
RB751S40
RB751V40
RB751_SER_1
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 21 May 2007
2 of 10
NXP Semiconductors
RB751 series
Schottky barrier single diodes
5. Limiting values
Table 6.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
RRM
V
R
I
F
I
FSM
P
tot
Parameter
repetitive peak reverse
voltage
reverse voltage
forward current
non-repetitive peak forward
current
total power dissipation
RB751CS40
RB751S40
RB751V40
T
j
T
amb
T
stg
[1]
[2]
Conditions
Min
-
-
-
Max
40
40
120
200
Unit
V
V
mA
mA
square wave;
t
p
< 10 ms
T
amb
≤
25
°C
[1]
[2]
[2]
-
-
-
-
-
−65
−65
250
280
280
150
+150
+150
mW
mW
mW
°C
°C
°C
junction temperature
ambient temperature
storage temperature
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
Reflow soldering is the only recommended soldering method.
6. Thermal characteristics
Table 7.
Symbol
R
th(j-a)
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
RB751CS40
RB751S40
RB751V40
[1]
[2]
Conditions
in free air
[1]
Min
Typ
Max
Unit
[2]
[2]
-
-
-
-
-
-
500
450
450
K/W
K/W
K/W
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Reflow soldering is the only recommended soldering method.
7. Characteristics
Table 8.
Characteristics
T
amb
= 25
°
C unless otherwise specified.
Symbol
V
F
I
R
C
d
[1]
Parameter
forward voltage
reverse current
diode capacitance
Conditions
I
F
= 1 mA
V
R
= 30 V
V
R
= 1 V; f = 1 MHz
[1]
Min
-
-
-
Typ
-
-
2
Max
370
0.5
-
Unit
mV
µA
pF
Pulse test: t
p
≤
300
µs; δ ≤
0.02.
RB751_SER_1
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 21 May 2007
3 of 10
NXP Semiconductors
RB751 series
Schottky barrier single diodes
10
2
I
F
(mA)
mlc361
10
3
I
R
(µA)
(1)
mlc362
10
2
10
10
(1)
(2)
(3)
(4)
(2)
1
1
10
−1
10
−1
(3)
10
−2
0
0.2
0.4
0.6
0.8
V
F
(V)
1
10
−2
0
10
20
30
VR (V)
40
(1) T
amb
= 125
°C
(2) T
amb
= 85
°C
(3) T
amb
= 25
°C
(4) T
amb
=
−40 °C
(1) T
amb
= 125
°C
(2) T
amb
= 85
°C
(3) T
amb
= 25
°C
Fig 1. Forward current as a function of forward
voltage; typical values
Fig 2. Reverse current as a function of reverse
voltage; typical values
mlc363
5
C
d
(pF)
4
3
2
1
0
0
10
20
30
VR (V)
40
f = 1 MHz; T
amb
= 25
°C
Fig 3. Diode capacitance as a function of reverse voltage; typical values
RB751_SER_1
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 21 May 2007
4 of 10
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