BZX384-V-G-Series
Vishay Semiconductors
Small Signal Zener Diodes
Features
• Silicon planar power Zener diodes
• The Zener voltages are graded according
to the international E 24 standard
• Standard Zener voltage tolerance is ± 5 %;
replace "C" with "B" for ± 2 % tolerance
• AEC-Q101 qualified
• Compliant to RoHS directive 2002/95/EC
and in accordance to WEEE 2002/96/EC
20145
Mechanical Data
Case:
SOD-323
Weight:
approx. 4 mg
Packaging codes/options:
18/10 k per 13" reel (8 mm tape), 10 k/box
08/3 k per 7" reel (8 mm tape), 15 k/box
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Parameter
Power dissipation
1)
Test condition
Symbol
P
tot
Value
200
1)
Unit
mW
Device on fiberglass substrate
Thermal Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Thermal resistance junction to ambient air
Junction temperature
Storage temperature range
1)
Test condition
Symbol
R
thJA
T
j
T
stg
Value
650
1)
150
- 65 to + 150
Unit
K/W
°C
°C
Valid that electrodes are kept at ambient temperature
** Please see document “Vishay Material Category Policy”:
www.vishay.com/doc?99902
Document Number 83335
Rev. 1.1, 26-Aug-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
1
BZX384-V-G-Series
Vishay Semiconductors
Electrical Characteristics
Zener voltage
range
Part number
Marking
code
V
Z
at I
ZT1
V
min.
BZX384C2V4-V-G
BZX384C2V7-V-G
BZX384C3V0-V-G
BZX384C3V3-V-G
BZX384C3V6-V-G
BZX384C3V9-V-G
BZX384C4V3-V-G
BZX384C4V7-V-G
BZX384C5V1-V-G
BZX384C5V6-V-G
BZX384C6V2-V-G
BZX384C6V8-V-G
BZX384C7V5-V-G
BZX384C8V2-V-G
BZX384C9V1-V-G
BZX384C10-V-G
BZX384C11-V-G
BZX384C12-V-G
BZX384C13-V-G
BZX384C15-V-G
BZX384C16-V-G
BZX384C18-V-G
BZX384C20-V-G
BZX384C22-V-G
BZX384C24-V-G
BZX384C27-V-G
BZX384C30-V-G
BZX384C33-V-G
BZX384C36-V-G
BZX384C39-V-G
BZX384C43-V-G
BZX384C47-V-G
BZX384C51-V-G
BZX384C56-V-G
BZX384C62-V-G
BZX384C68-V-G
BZX384C75-V-G
(1)
Dynamic resistance
r
zj
at I
ZT1
Ω
typ.
70 (≤ 100)
75 (≤ 100)
80 (≤ 95)
85 (≤ 95)
85 (≤ 90)
85 (≤ 90)
80 (≤ 90)
50 (≤ 80)
40 (≤ 60)
15 (≤ 40)
6 (≤ 10)
6 (≤ 15)
6 (≤ 15)
6 (≤ 15)
6 (≤ 15)
8 (≤ 20)
10 (≤ 20)
10 (≤ 25)
10 (≤ 30)
10 (≤ 30)
10 (≤ 40)
10 (≤ 45)
15 (≤ 55)
20 (≤ 55)
25 (≤ 70)
25 (≤ 80)
30 (≤ 80)
35 (≤ 80)
35 (≤ 90)
40 (≤ 130)
45 (≤ 150)
50 (≤ 170)
60 (≤ 180)
70 (≤ 200)
80 (≤ 215)
90 (≤ 240)
95 (≤ 255)
r
zj
at I
ZT2
Ω
typ.
275
300 (≤ 600)
325 (≤ 600)
350 (≤ 600)
375 (≤ 600)
400 (≤ 600)
410 (≤ 600)
425 (≤ 500)
400 (≤ 480)
80 (≤ 400)
40 (≤ 150)
30 (≤ 80)
30 (≤ 80)
40 (≤ 80)
40 (≤ 100)
50 (≤ 150)
50 (≤ 150)
50 (≤ 150)
50 (≤ 170)
50 (≤ 200)
50 (≤ 200)
50 (≤ 225)
60 (≤ 225)
60 (≤ 250)
60 (≤ 250)
65 (≤ 300)
70 (≤ 300)
75 (≤ 325)
80 (≤ 350)
80 (≤ 350)
85 (≤ 375)
85 (≤ 375)
85 (≤ 400)
100 (≤ 425)
100 (≤ 450)
150 (≤ 475)
170 (≤ 500)
Test
current
I
ZT1
mA
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
2
2
2
2
2
2
2
2
2
2
2
2
Temperature
coefficient of
zener voltage
α
VZ
at I
ZT1
10
-4
/°C
min.
-9
-9
-9
-8
-8
-7
-6
-5
-3
-2
-1
2
3
4
5
5
5
6
7
7
8
8
8
8
8
8
8
8
8
10
10
10
10
9
9
10
10
max.
-4
-4
-3
-3
-3
-3
-1
2
4
6
7
7
7
7
8
8
9
9
9
9
9.5
9.5
10
10
10
10
10
10
10
12
12
12
12
11
12
12
12
Test
current
at I
ZT2
mA
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
Reverse leakage
current
I
R
at V
R
µA
50
20
10
5
5
3
3
3
2
1
3
2
1
0.7
0.5
0.2
0.1
0.1
0.1
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
V
1
1
1
1
1
1
1
2
2
2
4
4
5
5
6
7
8
8
8
0.7 V
Znom.
0.7 V
Znom.
0.7 V
Znom.
0.7 V
Znom.
0.7 V
Znom.
0.7 V
Znom.
0.7 V
Znom.
0.7 V
Znom.
0.7 V
Znom.
0.7 V
Znom.
0.7 V
Znom.
0.7 V
Znom.
0.7 V
Znom.
0.7 V
Znom.
0.7 V
Znom.
0.7 V
Znom.
0.7 V
Znom.
0.7 V
Znom.
max.
2.6
2.9
3.2
3.5
3.8
4.1
4.6
5
5.4
6
6.6
7.2
7.9
8.7
9.6
10.6
11.6
12.7
14.1
15.6
17.1
19.1
21.2
23.3
25.6
28.9
32
35
38
41
46
50
54
60
66
72
79
Y1
Y2
Y3
Y4
Y5
Y6
Y7
Y8
Y9
YA
YB
YC
YD
YE
YF
YG
YH
YI
YK
YL
YM
YN
YO
YP
YR
YS
YT
YU
YW
YX
YY
YZ
Z1
Z2
Z3
Z4
Z5
2.2
2.5
2.8
3.1
3.4
3.7
4
4.4
4.8
5.2
5.8
6.4
7
7.7
8.5
9.4
10.4
11.4
12.4
13.8
15.3
16.8
18.8
20.8
22.8
25.1
28
31
34
37
40
44
48
52
58
64
70
Measured with pulses t
p
= 5 ms
Document Number 83335
Rev. 1.1, 26-Aug-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
2
BZX384-V-G-Series
Vishay Semiconductors
Electrical Characteristics
Zener voltage
range
Part number
Marking
code
V
Z
at I
ZT1
V
min.
BZX384B2V4-V-G
BZX384B2V7-V-G
BZX384B3V0-V-G
BZX384B3V3-V-G
BZX384B3V6-V-G
BZX384B3V9-V-G
BZX384B4V3-V-G
BZX384B4V7-V-G
BZX384B5V1-V-G
BZX384B5V6-V-G
BZX384B6V2-V-G
BZX384B6V8-V-G
BZX384B7V5-V-G
BZX384B8V2-V-G
BZX384B9V1-V-G
BZX384B10-V-G
BZX384B11-V-G
BZX384B12-V-G
BZX384B13-V-G
BZX384B15-V-G
BZX384B16-V-G
BZX384B18-V-G
BZX384B20-V-G
BZX384B22-V-G
BZX384B24-V-G
BZX384B27-V-G
BZX384B30-V-G
BZX384B33-V-G
BZX384B36-V-G
BZX384B39-V-G
BZX384B43-V-G
BZX384B47-V-G
BZX384B51-V-G
BZX384B56-V-G
BZX384B62-V-G
BZX384B68-V-G
BZX384B75-V-G
C1
C2
C3
C4
C5
C6
C7
C8
C9
CA
CB
CC
CD
CE
CF
CG
CH
CI
CK
CL
CM
CN
CO
CP
CR
CS
CT
CU
CW
CX
CY
CZ
D1
D2
D3
D4
D5
2.35
2.65
2.94
3.23
3.53
3.82
4.21
4.61
5.00
5.49
6.08
6.66
7.35
8.04
8.92
9.80
10.8
11.8
12.7
14.7
15.7
17.6
19.6
21.6
23.5
26.5
29.4
32.3
35.3
38.2
42.1
46.1
50.0
54.9
60.8
66.6
73.5
max.
2.45
2.75
3.06
3.37
3.67
3.98
4.39
4.79
5.20
5.71
6.32
6.94
7.65
8.36
9.28
10.2
11.2
12.2
13.3
15.3
16.3
18.4
20.4
22.4
24.5
27.5
30.6
33.7
36.7
39.8
43.9
47.9
52.0
57.1
63.2
69.4
76.5
Dynamic resistance
r
zj
at I
ZT1
Ω
typ.
70 (≤ 100)
75 (≤ 100)
80 (≤ 95)
85 (≤ 95)
85 (≤ 90)
85 (≤ 90)
80 (≤ 90)
50 (≤ 80)
40 (≤ 60)
15 (≤ 40)
6 (≤ 10)
6 (≤ 15)
6 (≤ 15)
6 (≤ 15)
6 (≤ 15)
8 (≤ 20)
10 (≤ 20)
10 (≤ 25)
10 (≤ 30)
10 (≤ 30)
10 (≤ 40)
10 (≤ 45)
15 (≤ 55)
20 (≤ 55)
25 (≤ 70)
25 (≤ 80)
30 (≤ 80)
35 (≤ 80)
35 (≤ 90)
40 (≤ 130)
45 (≤ 150)
50 (≤ 170)
60 (≤ 180)
70 (≤ 200)
80 (≤ 215)
90 (≤ 240)
95 (≤ 255)
r
zj
at I
ZT2
Ω
typ.
275
300 (≤ 600)
325 (≤ 600)
350 (≤ 600)
375 (≤ 600)
400 (≤ 600)
410 (≤ 600)
425 (≤ 500)
400 (≤ 480)
80 (≤ 400)
40 (≤ 150)
30 (≤ 80)
30 (≤ 80)
40 (≤ 80)
40 (≤ 100)
50 (≤ 150)
50 (≤ 150)
50 (≤ 150)
50 (≤ 170)
50 (≤ 200)
50 (≤ 200)
50 (≤ 225)
60 (≤ 225)
60 (≤ 250)
60 (≤ 250)
65 (≤ 300)
70 (≤ 300)
75 (≤ 325)
80 (≤ 350)
80 (≤ 350)
85 (≤ 375)
85 (≤ 375)
85 (≤ 400)
100 (≤ 425)
100 (≤ 450)
150 (≤ 475)
170 (≤ 500)
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
2
2
2
2
2
2
2
2
2
2
2
2
Test
current
I
ZT1
mA
Temperature
coefficient of
zener voltage
α
VZ
at I
ZT1
10
-4
/°C
min.
-9
-9
-9
-8
-8
-7
-6
-5
-3
-2
-1
2
3
4
5
5
5
6
7
7
8
8
8
8
8
8
8
8
8
10
10
10
10
9
9
10
10
max.
-4
-4
-3
-3
-3
-3
-1
2
4
6
7
7
7
7
8
8
9
9
9
9
9.5
9.5
10
10
10
10
10
10
10
12
12
12
12
11
12
12
12
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
50
20
10
5
5
3
3
3
2
1
3
2
1
0.7
0.5
0.2
0.1
0.1
0.1
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
1
1
1
1
1
1
1
2
2
2
4
4
5
5
6
7
8
8
8
0.7 V
Znom.
0.7 V
Znom.
0.7 V
Znom.
0.7 V
Znom.
0.7 V
Znom.
0.7 V
Znom.
0.7 V
Znom.
0.7 V
Znom.
0.7 V
Znom.
0.7 V
Znom.
0.7 V
Znom.
0.7 V
Znom.
0.7 V
Znom.
0.7 V
Znom.
0.7 V
Znom.
0.7 V
Znom.
0.7 V
Znom.
0.7 V
Znom.
Test
current
atI
ZT2
mA
µA
Reverse leakage
current
I
R
at V
R
V
Document Number 83335
Rev. 1.1, 26-Aug-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
3
BZX384-V-G-Series
Vishay Semiconductors
Typical Characteristics
(T
amb
= 25 °C, unless otherwise specified)
mA
10
3
10
2
1000
5
4
3
2
T
J
= 25 °C
I
F
10
1
10
-1
10
-2
T
J
= 100 °C
r
zj
100
5
4
3
2
T
J
= 25 °C
100
10
-3
10
-4
10
-5
5
4
3
2
2.7
3.6
4.7
5.1
5.6
1
0.2
0.4
0.6
0.8
1V
0
18114
0.1
18117
2
5
1
2
5
10
I
Z
2
5
100 mA
V
F
Figure 1. Forward Characteristics
Figure 4. Dynamic Resistance vs. Zener Current
mW
250
pF
1000
7
5
4
3
2
T
j
= 25 °C
200
C
tot
V
R
= 1
V
V
R
= 2
V
P
tot
150
100
100
7
5
4
V
R
= 1
V
V
R
= 2
V
50
3
2
0
0
18192
100
200 °C
10
1
18193
2
3
4 5
10
2
3 4 5
100
V
T
amb
V
Z
Figure 2. Admissible Power Dissipation vs.
Ambient Temperature
Figure 5. Capacitance vs. Zener Voltage
°C/W
10
3
7
5
4
3
2
Ω
100
T
J
= 25 °C
0.5
0.2
0.1
0.05
0.02
0.01
V
=0
5
4
R
thA
10
2
7
5
4
3
2
r
zj
3
2
33
27
22
18
15
12
10
6.8/8.2
6.2
10
5
4
10
7
5
4
3
2
t
p
t
p
T
T
3
P
I
2
1
10
-5
18116
1
10
-4
10
-3
10
-2
10
-1
1
10s
0.1
18119
2
5
1
2
5
t
p
10
I
Z
2
5
100 mA
Figure 3. Pulse Thermal Resistance vs. Pulse Duration
Figure 6. Dynamic Resistance vs. Zener Current
Document Number 83335
Rev. 1.1, 26-Aug-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
4
BZX384-V-G-Series
Vishay Semiconductors
Ω
10
3
7
5
4
T
j
= 25 °C
mV/°C
25
R
zj
3
2
47 + 51
43
39
36
Δ
V
Z
Δ
T
j
20
15
10
5
0
-5
I
Z
=
5 mA
1 mA
20 mA
10
2
7
5
4
3
2
10
0.1
18120
2
3
4 5
1
2
3 4 5
I
Z
10
mA
1
18135
2
3
4 5
10
2
3 4 5
100
V
V
Z
at I
Z
= 5 mA
V
≥
27
V,
I = 2 mA
Figure 7. Dynamic Resistance vs. Zener Current
Figure 10. Temperature Dependence of Zener Voltage vs.
Zener Voltage
Ω
10
3
5
4
3
2
V
0.8
R
zth
= R
thA
x
V
Z
x
Δ
V
Z
Δ
T
j
Δ
V
Z
25
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
V
Z
at I
Z
= 5 mA
15
10
R
zth
10
2
5
4
3
2
8
7
6.2
5.9
5.6
5.1
3.6
4.7
10
5
4
3
2
negative
positive
-1
- 0.2
2
3 4 5
1
1
18121
2
3
4 5
10
100
V
0
18124
20
40
60
80
100 120 140 C
V
Z
at I
Z
= 5 mA
T
j
Figure 8. Thermal Differential Resistance vs. Zener Voltage
Figure 11. Change of Zener Voltage vs. Junction Temperature
Ω
100
7
5
4
V
9
8
7
V
Z
at I
Z
= 2 mA
51
R
zj
3
2
Δ
V
Z
6
5
10
7
5
4
3
2
4
3
2
1
T
j
= 25 °C
I
Z
= 5 mA
1
2
3
4 5
43
36
0
-1
0
18194
1
10
2
I
Z
= 2 mA
20
40
60
80
100 120
140 °C
3 4 5
100
V
18122
V
Z
T
j
Figure 9. Dynamic Resistance vs. Zener Voltage
Figure 12. Change of Zener Voltage vs. Junction Temperature
Document Number 83335
Rev. 1.1, 26-Aug-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
5
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