HCC/HCF4030B
QUAD EXCLUSIVE-OR GATE
.
.
.
.
.
.
.
.
MEDIUM-SPEED OPERATION – t
PHL
= t
PLH
=
60ns (typ.) @ C
L
= 50pF and V
DD
– V
SS
= 10V
LOW OUTPUT IMPEDANCE : 500Ω (typ.) @
V
DD
– V
SS
= 10V
QUIESCENT CURRENT SPECIFIED TO 20V
FOR HCC DEVICE
STANDARDIZED SYMMETRICAL OUTPUT
CHARACTERISTICS
5V, 10V, AND 15V PARAMETRIC RATINGS
INPUT CURRENT OF 100nA AT 18V AND 25°C
FOR HCC DEVICE
100% TESTED FOR QUIESCENT CURRENT
MEETS ALL REQUIREMENTS OF JEDEC TEN-
TATIVE STANDARD N° 13A, ”STANDARD SPE-
CIFICATIONS FOR DESCRIPTION OF ”B”
SERIES CMOS DEVICES”
EY
(Plastic Package)
F
(Ceramic Frit Seal Package)
M1
(Micro Package)
C1
(Plastic Chip Carrier)
ORDER CODES :
HCC4030BF
HCF4030BM1
HCF4030BEY
HCF4030BC1
PIN CONNECTIONS
DESCRIPTION
The
HCC4030B
(extended temperature range) and
HCF4030B
(intermediate temperature range) are
monolithic integrated circuit, available in 14-lead
dual in-line plastic or ceramic package and plastic
micro package.
The
HCC/HCF4030B
types consist of four inde-
pendent exclusive-OR gates integrated on a single
monolithic silicon chip. Each exclusive-OR gate con-
sists of four n-channel and four p-channel enhance-
ment-type transistors. All inputs and outputs are
protected against electrostatic effects.
November 1996
1/12
HCC/HCF4030B
FUNCTIONAL DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DD
*
V
i
I
I
P
tot
Parameter
Supply Voltage :
HCC
Types
HCF
Types
Input Voltage
DC Input Current (any one input)
Total Power Dissipation (per package)
Dissipation per Output Transistor
for T
op
= Full Package-temperature Range
Operating Temperature :
HCC
Types
HCF
Types
Storage Temperature
Value
– 0.5 to + 20
– 0.5 to + 18
– 0.5 to V
DD
+ 0.5
±
10
200
100
– 55 to + 125
– 40 to + 85
– 65 to + 150
Unit
V
V
V
mA
mW
mW
°C
°C
°C
T
op
T
s tg
Stresses above those listed under ”Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress
rating only and functional operation of the device at these or any other conditions above those indicated in the operational sec-
tions of this specification is not implied. Exposure to absolute maximum rating conditions for external periods may affect device
reliability.
RECOMMENDED OPERATING CONDITIONS
Symbol
V
DD
V
I
T
op
Parameter
Supply Voltage :
HCC
Types
HC F
Types
Input Voltage
Operating Temperature :
HCC
Types
H CF
Types
Value
3 to 18
3 to 15
0 to V
DD
– 55 to + 125
– 40 to + 85
Unit
V
V
V
°C
°C
TRUTH TABLE
One of Four Identical Gates
A
0
1
0
1
Where ”1” = High level
”0” = Low level.
B
0
0
1
0
J
0
1
1
0
2/12
HCC/HCF4030B
STATIC ELECTRICAL CHARACTERISTICS
(over recommended operating conditions)
Test Conditions
Symbol
Parameter
V
I
(V)
0/ 5
HCC 0/10
Types 0/15
0/20
0/ 5
HCF
0/10
Types
0/15
V
OH
Output High
Voltage
0/ 5
0/10
0/15
V
OL
Output Low
Voltage
5/0
10/0
15/0
V
IH
Input High
Voltage
0.5/4.5
1/9
4.5/0.5
9/1
0/ 5
HCC 0/ 5
Types 0/10
0/15
0/ 5
0/ 5
HCF
Types 0/10
0/15
I
OL
Output
Sink
Current
0/ 5
HCC
0/10
Types
0/15
0/ 5
HCF
0/10
Types
0/15
I
IH
, I
IL
Input
Leakage
Current
HCC
0/18
Types
HCF
0/15
Types
Any Input
2.5
4.6
9.5
13.5
2.5
4.6
9.5
13.5
0.4
0.5
1.5
0.4
0.5
1.5
<1
<1
<1
<1
<1
<1
<1
<1
<1
<1
V
O
(V)
Value
Unit
|I
O
| V
D D
T
L o w
*
25
°C
T
Hi g h
*
(µA) (V)
Min. Max. Min. Typ. Max. Min. Max.
5
10
15
20
5
10
15
5
10
15
5
10
15
5
10
15
5
10
15
5
5
10
15
5
5
10
15
5
10
15
5
10
15
18
Any Input
15
±
0.3
±10
– 5
±
0.3
5
7.5
±
1
pF
– 2
– 0.64
– 1.6
– 4.2
– 1.53
– 0.52
– 1.3
– 3.6
0.64
1.6
4.2
0.52
1.3
3.6
±
0.1
3.5
7
11
1.5
3
4
– 1.6 – 3.2
– 0.51 – 1
– 1.3 – 2.6
– 3.4 – 6.8
– 1.36 – 3.2
– 0.44 – 1
– 1.1 – 2.6
– 3.0 – 6.8
0.51
1.3
3.4
0.44
1.1
3.0
1
2.6
6.8
1
2.6
6.8
±10
– 5
±
0.1
4.95
9.95
14.95
0.05
0.05
0.05
3.5
7
11
1.5
3
4
– 1.15
– 0.36
– 0.9
– 2.4
– 1.1
– 0.36
– 0.9
– 2.4
0.36
0.9
2.4
0.36
0.9
2.4
±
1
µA
mA
mA
1
2
4
20
4
8
16
4.95
9.95
14.95
0.05
0.05
0.05
3.5
7
11
1.5
3
4
V
V
0.02
0.02
0.02
0.04
0.02
0.02
0.02
1
2
4
20
4
8
16
4.95
9.95
14.95
0.05
0.05
0.05
V
V
30
60
120
600
30
60
120
µA
I
L
Quiescent
Current
1.5/13.5 < 1
V
IL
Input Low
Voltage
13.5/1.5 < 1
I
OH
Output
Drive
Current
C
I
Input Capacitance
* T
Lo w
= – 55°C for
HCC
device : – 40°C for
HCF
device.
* T
High
= + 125°C for
HCC
device : + 85°C for
HCF
device.
The Noise Margin for both ”1” and ”0” level is : 1V min. with V
DD
= 5V, 2V min. with V
DD
= 10V, 2.5 V min. with V
DD
= 15V.
3/12
HCC/HCF4030B
DYNAMIC ELECTRICAL CHARACTERISTICS
(T
amb
= 25°C, C
L
= 50pF, R
L
= 200kΩ,
typical temperature coefficient for all V
D D
= 0.3%/°C values, all input rise and fall time = 20ns)
Symbol
Parameter
Test Conditions
V
C C
(V)
Min.
5
10
15
t
T L H
, t
THL
Transition Time
5
10
15
Value
Typ.
140
65
50
100
50
40
Max.
280
130
100
200
100
80
ns
ns
Unit
t
PL H
, t
PHL
Propagation Delay Time
Typical Output Low (sink) Current Characteristics.
Minimum Output Low (sink) Current Charac-
teristics.
Typical Output High (source) Current Charac-
teristics.
Minimum Output High (source) Current Charac-
teristics.
4/12
Embedded System
京公网安备 11010802033920号
EEWORLD
