DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D088
BFQ67
NPN 8 GHz wideband transistor
Product specification
Supersedes data of September 1995
File under Discrete Semiconductors, SC14
1998 Aug 27
Philips Semiconductors
Product specification
NPN 8 GHz wideband transistor
FEATURES
•
High power gain
•
Low noise figure
•
High transition frequency
•
Gold metallization ensures
excellent reliability.
APPLICATIONS
Satellite TV tuners and RF portable
communications equipment up to
2 GHz.
PINNING
PIN
1
2
3
base
emitter
collector
Marking code:
V2p.
BFQ67
DESCRIPTION
Silicon NPN wideband transistor in a
plastic SOT23 package.
alfpage
3
DESCRIPTION
1
Top view
2
MSB003
Fig.1 SOT23.
QUICK REFERENCE DATA
SYMBOL
V
CBO
V
CEO
I
C
P
tot
h
FE
f
T
G
UM
F
Note
1. T
s
is the temperature at the soldering point of the collector tab.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
stg
T
j
Note
1. T
s
is the temperature at the soldering point of the collector tab.
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
total power dissipation
storage temperature range
junction temperature
T
s
≤
97
°C;
note 1
open emitter
open base
open collector
CONDITIONS
−
−
−
−
−
−65
−
MIN.
MAX.
20
10
2.5
50
300
+150
175
V
V
V
mA
mW
°C
°C
UNIT
PARAMETER
collector-base voltage
collector-emitter voltage
collector current (DC)
total power dissipation
DC current gain
transition frequency
maximum unilateral
power gain
noise figure
T
s
≤
97
°C;
note 1
I
C
= 15 mA; V
CE
= 5 V
I
C
= 15 mA; V
CE
= 8 V
I
C
= 15 mA; V
CE
= 8 V; f = 1 GHz
I
C
= 5 mA; V
CE
= 8 V; f = 1 GHz
open emitter
open base
CONDITIONS
MIN.
−
−
−
−
60
−
−
−
TYP.
−
−
−
−
100
8
14
1.3
MAX.
20
10
50
300
−
−
−
−
GHz
dB
dB
UNIT
V
V
mA
mW
1998 Aug 27
2
Philips Semiconductors
Product specification
NPN 8 GHz wideband transistor
THERMAL CHARACTERISTICS
SYMBOL
R
th j-s
Note
1.
T
s
is the temperature at the soldering point of the collector lead.
PARAMETER
thermal resistance from junction to soldering point
CONDITIONS
note 1
VALUE
260
BFQ67
UNIT
K/W
CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
h
FE
C
c
C
e
C
re
f
T
G
UM
PARAMETER
collector cut-off current
DC current gain
collector capacitance
emitter capacitance
feedback capacitance
transition frequency
maximum unilateral power gain
(note 1)
noise figure
CONDITIONS
I
E
= 0; V
CB
= 5 V
I
C
= 15 mA; V
CE
= 5 V
I
E
= i
e
= 0; V
CB
= 8 V; f = 1 MHz
I
C
= i
c
= 0; V
EB
= 0.5 V; f = 1 MHz
I
C
= 0; V
CB
= 8 V; f = 1 MHz
I
C
= 15 mA; V
CE
= 8 V
I
C
= 15 mA; V
CE
= 8 V;
T
amb
= 25
°C;
f = 1 GHz
I
C
= 15 mA; V
CE
= 8 V; f = 2 GHz
F
Γ
s
=
Γ
opt
; I
C
= 5 mA; V
CE
= 8 V;
T
amb
= 25
°C;
f = 1 GHz
Γ
s
=
Γ
opt
; I
C
= 15 mA; V
CE
= 8 V;
T
amb
= 25
°C;
f = 1 GHz
Γ
s
=
Γ
opt
; I
C
= 5 mA; V
CE
= 8 V;
T
amb
= 25
°C;
f = 2 GHz
I
C
= 5 mA; V
CE
= 8 V;
T
amb
= 25
°C;
f = 2 GHz; Z
s
= 60
Ω
Γ
s
=
Γ
opt
; I
C
= 15 mA; V
CE
= 8 V;
T
amb
= 25
°C;
f = 2 GHz
I
C
= 15 mA; V
CE
= 8 V;
T
amb
= 25
°C;
f = 2 GHz; Z
s
= 60
Ω
Note
1. G
UM
is the maximum unilateral power gain, assuming S
12
is zero and G
UM
MIN.
−
60
−
−
−
−
−
−
−
−
−
−
−
−
TYP.
−
100
0.7
1.3
0.5
8
14
8
1.3
1.7
2.2
2.5
2.7
3
MAX.
50
−
−
−
−
−
−
−
−
−
−
−
−
−
pF
pF
pF
GHz
dB
dB
dB
dB
dB
dB
dB
dB
UNIT
nA
S
21
=
10 log ------------------------------------------------------------- dB .
-
2
2
1
–
S
11
1
–
S
22
2
1998 Aug 27
3
Philips Semiconductors
Product specification
NPN 8 GHz wideband transistor
BFQ67
handbook, halfpage
400
MRA614
MBB301
Ptot
(mW)
300
handbook, halfpage
120
h FE
80
200
40
100
0
0
50
100
150
Ts (oC)
200
0
0
20
40
I C (mA)
60
V
CE
= 5 V.
Fig.3
Fig.2 Power derating curve.
DC current gain as a function of collector
current, typical values.
handbook, halfpage
0.8
MRA607
handbook, halfpage
10
MBB303
Cre
(pF)
0.6
fT
(GHz)
8
6
0.4
4
0.2
2
0
0
5
10
VCB (V)
15
0
0
10
20
30
I C (mA)
40
I
C
= i
c
= 0; f = 1 MHz.
V
CE
= 8 V; T
amb
= 25
°C;
f = 2 GHz.
Fig.4
Feedback capacitance as a function of
collector-base voltage, typical values.
Fig.5
Transition frequency as a function of
collector current, typical values.
1998 Aug 27
4
Philips Semiconductors
Product specification
NPN 8 GHz wideband transistor
BFQ67
handbook, halfpage
25
MRA611
MRA610
handbook, halfpage
50
gain
(dB)
20
gain
(dB)
40
GUM
MSG
15
Gmax
GUM
30
10
MSG
20
5
10
Gmax
0
0
10
20
IC (mA)
30
0
10
10
2
10
3
f (MHz)
10
4
V
CE
= 8 V; f = 1 GHz.
V
CE
= 8 V; I
C
= 5 mA.
Fig.6
Gain as a function of collector current,
typical values.
Fig.7
Gain as a function of frequency, typical
values.
MRA608
MRA609
handbook, halfpage
50
handbook, halfpage
50
gain
(dB)
40
GUM
30
MSG
20
gain
(dB)
40
GUM
30
MSG
20
Gmax
10
Gmax
10
0
10
10
2
10
3
f (MHz)
10
4
0
10
10
2
10
3
f (MHz)
10
4
V
CE
= 8 V; I
C
= 15 mA.
V
CE
= 8 V; I
C
= 30 mA.
Fig.8
Gain as a function of frequency, typical
values.
Fig.9
Gain as a function of frequency, typical
values.
1998 Aug 27
5
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