K3N6V1000F-GC10 datasheet, PDF

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K3N6V1000F-GC10: DescriptionMASK ROM, 2MX16, 100ns, CMOS, PDSO44, 0.600 INCH, SOP-44; Categorystorage storage; File Size48KB，3 Pages; ManufacturerSAMSUNG; Websitehttp://www.samsung.com/Products/Semiconductor/

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K3N6V1000F-GC10 Overview

MASK ROM, 2MX16, 100ns, CMOS, PDSO44, 0.600 INCH, SOP-44

K3N6V1000F-GC10 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	SAMSUNG
Parts packaging code	SOIC
package instruction	SOP, SOP44,.63
Contacts	44
Reach Compliance Code	compliant
ECCN code	EAR99
Maximum access time	100 ns
Spare memory width	8
JESD-30 code	R-PDSO-G44
JESD-609 code	e0
length	28.5 mm
memory density	33554432 bit
Memory IC Type	MASK ROM
memory width	16
Number of functions	1
Number of terminals	44
word count	2097152 words
character code	2000000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	2MX16
Package body material	PLASTIC/EPOXY
encapsulated code	SOP
Encapsulate equivalent code	SOP44,.63
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	225
power supply	3.3 V
Certification status	Not Qualified
Maximum seat height	3.1 mm
Maximum standby current	0.00003 A
Maximum slew rate	0.04 mA
Maximum supply voltage (Vsup)	3.6 V
Minimum supply voltage (Vsup)	3 V
Nominal supply voltage (Vsup)	3.3 V
surface mount	YES
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	GULL WING
Terminal pitch	1.27 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	30
width	12.6 mm

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K3N6V(U)1000F-GC

32M-Bit (4Mx8 /2Mx16) CMOS MASK ROM

FEATURES

•

Switchable organization

4,194,304x8(byte mode)

2,097,152x16(word mode)

•

Fast access time

3.3V Operation : 100ns(Max.)@C

=50pF,

120ns(Max.)@C

=100pF

3.0V Operation : 120ns(Max.)@C

=100pF

•

Supply voltage : single +3.0V/ single +3.3V

•

Current consumption

Operating : 40mA(Max.)

Standby : 30µA(Max.)

•

Fully static operation

•

All inputs and outputs TTL compatible

•

Three state outputs

•

Package

-. K3N6V(U)1000F-GC : 44-SOP-600

CMOS MASK ROM

GENERAL DESCRIPTION

The K3N6V(U)1000F-GC is a fully static mask programmable

ROM fabricated using silicon gate CMOS process technology,

and is organized either as 4,194,304 x 8 bit(byte mode) or as

2,097,152 x 16 bit(word mode) depending on BHE voltage

level.(See mode selection table)

This device operates with 3.0V or 3.3V power supply, and all

inputs and outputs are TTL compatible.

Because of its asynchronous operation, it requires no external

clock assuring extremely easy operation.

It is suitable for use in program memory of microprocessor, and

data memory, character generator.

The K3N6V(U)1000F-GC is packaged in a 44-SOP.

FUNCTIONAL BLOCK DIAGRAM

PIN CONFIGURATION

-1

BUFFERS

AND

DECODER

MEMORY CELL

MATRIX

(2,097,152x16/

4,194,304x8)

N.C

44 A

43 A

42 A

41 A

40 A

39 A

38 A

37 A

36 A

35 A

BUFFERS

AND

DECODER

SENSE AMP.

BUFFERS

SOP

34 A

33 BHE

32 V

31 Q

-1

30 Q

29 Q

28 Q

27 Q

26 Q

25 Q

24 Q

23 V

CE 12

. . .

BHE

CONTROL

LOGIC

OE 14

Pin Name

- A

- Q

-1

BHE

N.C

Pin Function

Address Inputs

Data Outputs

Output 15(Word mode)/

LSB Address(Byte mode)

Word/Byte selection

Chip Enable

Output Enable

Power

Ground

No Connection

K3N6V(U)1000F-GC

K3N6V1000F-GC10 Related Products

	K3N6V1000F-GC10	K3N6V1000F-GC120	K3N6U1000F-GC120	K3N6U1000F-GC12	K3N6V1000F-GC12
Description	MASK ROM, 2MX16, 100ns, CMOS, PDSO44, 0.600 INCH, SOP-44	MASK ROM, 2MX16, 120ns, CMOS, PDSO44, 0.600 INCH, SOP-44	MASK ROM, 2MX16, 120ns, CMOS, PDSO44, 0.600 INCH, SOP-44	MASK ROM, 2MX16, 120ns, CMOS, PDSO44, 0.600 INCH, SOP-44	MASK ROM, 2MX16, 120ns, CMOS, PDSO44, 0.600 INCH, SOP-44
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible	incompatible
Maker	SAMSUNG	SAMSUNG	SAMSUNG	SAMSUNG	SAMSUNG
Parts packaging code	SOIC	SOIC	SOIC	SOIC	SOIC
package instruction	SOP, SOP44,.63	SOP,	SOP,	SOP, SOP44,.63	SOP, SOP44,.63
Contacts	44	44	44	44	44
Reach Compliance Code	compliant	compliant	compliant	compliant	compliant
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99
Maximum access time	100 ns	120 ns	120 ns	120 ns	120 ns
Spare memory width	8	8	8	8	8
JESD-30 code	R-PDSO-G44	R-PDSO-G44	R-PDSO-G44	R-PDSO-G44	R-PDSO-G44
length	28.5 mm	28.5 mm	28.5 mm	28.5 mm	28.5 mm
memory density	33554432 bit	33554432 bit	33554432 bit	33554432 bit	33554432 bit
Memory IC Type	MASK ROM	MASK ROM	MASK ROM	MASK ROM	MASK ROM
memory width	16	16	16	16	16
Number of functions	1	1	1	1	1
Number of terminals	44	44	44	44	44
word count	2097152 words	2097152 words	2097152 words	2097152 words	2097152 words
character code	2000000	2000000	2000000	2000000	2000000
Operating mode	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
Maximum operating temperature	70 °C	70 °C	70 °C	70 °C	70 °C
organize	2MX16	2MX16	2MX16	2MX16	2MX16
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	SOP	SOP	SOP	SOP	SOP
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Parallel/Serial	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL
Peak Reflow Temperature (Celsius)	225	225	225	225	225
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum seat height	3.1 mm	3.1 mm	3.1 mm	3.1 mm	3.1 mm
Maximum supply voltage (Vsup)	3.6 V	3.6 V	3.3 V	3.3 V	3.6 V
Minimum supply voltage (Vsup)	3 V	3 V	2.7 V	2.7 V	3 V
Nominal supply voltage (Vsup)	3.3 V	3.3 V	3 V	3 V	3.3 V
surface mount	YES	YES	YES	YES	YES
technology	CMOS	CMOS	CMOS	CMOS	CMOS
Temperature level	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL
Terminal form	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING
Terminal pitch	1.27 mm	1.27 mm	1.27 mm	1.27 mm	1.27 mm
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL
Maximum time at peak reflow temperature	30	30	30	30	30
width	12.6 mm	12.6 mm	12.6 mm	12.6 mm	12.6 mm
JESD-609 code	e0	-	-	e0	e0
Encapsulate equivalent code	SOP44,.63	-	-	SOP44,.63	SOP44,.63
power supply	3.3 V	-	-	3 V	3.3 V
Maximum standby current	0.00003 A	-	-	0.00003 A	0.00003 A
Maximum slew rate	0.04 mA	-	-	0.035 mA	0.04 mA
Terminal surface	Tin/Lead (Sn/Pb)	-	-	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)

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