EEWORLDEEWORLDEEWORLD

Part Number

Search

BC856AW-7

Description
Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC PACKAGE-3
CategoryDiscrete semiconductor    The transistor   
File Size45KB,2 Pages
ManufacturerDiodes Incorporated
Download Datasheet Parametric Compare View All

BC856AW-7 Overview

Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC PACKAGE-3

BC856AW-7 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerDiodes Incorporated
package instructionSMALL OUTLINE, R-PDSO-G3
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage65 V
ConfigurationSINGLE
Minimum DC current gain (hFE)125
JESD-30 codeR-PDSO-G3
JESD-609 codee0
Humidity sensitivity level1
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)235
Polarity/channel typePNP
Maximum power dissipation(Abs)0.2 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature10
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)200 MHz

BC856AW-7 Preview

BC856AW - BC858CW
PNP SURFACE MOUNT SMALL SIGNAL TRANSISTOR
Features
·
·
·
·
·
·
·
·
·
·
·
Ideally Suited for Automatic Insertion
Complementary NPN Types Available
(BC846W-BC848W)
For Switching and AF Amplifier Applications
Case: SOT-323, Molded Plastic
Case material - UL Flammability Rating
Classification 94V-0
Moisture sensitivity: Level 1 per J-STD-020A
Terminals: Solderable per MIL-STD-202, Method
208
Pin Connections: See Diagram
Marking Code: See Table Below & Diagram
on Page 2
Ordering & Date Code Information: See Page 2
Approx. Weight: 0.006 grams
Marking Code (Note 2)
Type
BC856AW
BC856BW
BC857AW
BC857BW
Marking
K3A
K3B
K3V, K3A
K3W, K3B
Type
BC857CW
BC858AW
BC858BW
BC858CW
Marking
K3G
K3J, K3A, K3V
K3K, K3B, K3W
K3L, K3G
SOT-323
A
C
B C
B
G
H
K
M
E
Dim
A
B
C
D
E
G
H
J
K
D
F
L
Min
0.25
1.15
2.00
0.30
1.20
1.80
0.0
0.90
0.25
0.10
Max
0.40
1.35
2.20
0.40
1.40
2.20
0.10
1.00
0.40
0.18
Mechanical Data
0.65 Nominal
J
L
M
a
All Dimensions in mm
Maximum Ratings
Collector-Base Voltage
@ T
A
= 25°C unless otherwise specified
Symbol
BC856
BC857
BC858
BC856
BC857
BC858
V
CBO
Value
-80
-50
-30
-65
-45
-30
-5.0
-100
-200
-200
200
625
-65 to +150
Unit
V
Characteristic
Collector-Emitter Voltage
V
CEO
V
EBO
I
C
I
CM
I
EM
P
d
R
qJA
T
j
, T
STG
V
V
mA
mA
mA
mW
°C/W
°C
Emitter-Base Voltage
Collector Current
Peak Collector Current
Peak Emitter Current
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage Temperature Range
Notes:
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on ourwebsite at http://www.diodes.com/datasheets/ap02001.pdf.
2. Current gain subgroup “C” is not available for BC856W.
DS30251 Rev. A-2
1 of 2
BC856AW - BC858CW
Electrical Characteristics
Characteristic
@ T
A
=25°C unless otherwise specified
Symbol
BC856
BC857
BC858
BC856
BC857
BC858
V
(BR)CBO
Min
-80
-50
-30
-65
-45
-30
-5
125
220
420
-600
100
Typ
180
290
520
-75
-250
-700
-850
-650
200
3
Max
250
475
800
-300
-650
-950
-750
-820
-15
-4.0
4.5
10
Unit
V
Test Condition
I
C
= 10mA, I
B
= 0
Collector-Base Breakdown Voltage (Note 3)
Collector-Emitter Breakdown Voltage (Note 3)
V
(BR)CEO
V
(BR)EBO
h
FE
V
CE(SAT)
V
BE(SAT)
V
BE(ON)
I
CBO
I
CBO
f
T
C
CBO
NF
V
V
mV
mV
mV
nA
µA
MHz
pF
dB
I
C
= 10mA, I
B
= 0
I
E
= 1mA, I
C
= 0
V
CE
= -5.0V, I
C
= -2.0mA
I
C
= -10mA, I
B
= -0.5mA
I
C
= -100mA, I
B
= -5.0mA
I
C
= -10mA, I
B
= -0.5mA
I
C
= -100mA, I
B
= -5.0mA
V
CE
= -5.0V, I
C
= -2.0mA
V
CE
= -5.0V, I
C
= -10mA
V
CB
= -30V
V
CB
= -30V, T
A
= 150°C
V
CE
= -5.0V, I
C
= -10mA,
f = 100MHz
V
CB
= -10V, f = 1.0MHz
V
CE
= -5.0V, I
C
= 200µA,
R
S
= 2kW, f = 1kHz,
Df
= 200Hz
Emitter-Base Breakdown Voltage (Note 3)
DC Current Gain (Note 3)
Current Gain Group A
B
C
Collector-Emitter Saturation Voltage (Note 3)
Base-Emitter Saturation Voltage (Note 3)
Base-Emitter Voltage (Note 3)
Collector-Cutoff Current (Note 3)
Gain Bandwidth Product
Collector-Base Capacitance
Noise Figure
Notes:
3. Short duration pulse test to minimize self-heating effect.
Ordering Information
Device
BC85xxW-7*
(Note 4)
Packaging
SOT-323
Shipping
3000/Tape & Reel
Notes:
4. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
*xx = device type, e.g. BC856AW-7.
Marking Information
XXX
XXX = Product Type Marking Code (See Page 1), e.g. K3A = BC856AW
YM = Date Code Marking
Y = Year ex: N = 2002
M = Month ex: 9 = September
Date Code Key
Year
Code
Month
Code
1998
J
Jan
1
Feb
2
1999
K
March
3
2000
L
Apr
4
May
5
2001
M
Jun
6
Jul
7
2002
N
Aug
8
Sep
9
2003
P
Oct
O
Nov
N
2004
R
Dec
D
DS30251 Rev. A-2
YM
2 of 2
BC856AW - BC858CW

BC856AW-7 Related Products

BC856AW-7 BC858CW-7 BC857CW-7
Description Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC PACKAGE-3 Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC PACKAGE-3 Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC PACKAGE-3
Is it Rohs certified? incompatible incompatible incompatible
Maker Diodes Incorporated Diodes Incorporated Diodes Incorporated
package instruction SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3
Contacts 3 3 3
Reach Compliance Code unknown unknown unknown
ECCN code EAR99 EAR99 EAR99
Maximum collector current (IC) 0.1 A 0.1 A 0.1 A
Collector-emitter maximum voltage 65 V 30 V 45 V
Configuration SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 125 420 420
JESD-30 code R-PDSO-G3 R-PDSO-G3 R-PDSO-G3
JESD-609 code e0 e0 e0
Humidity sensitivity level 1 1 1
Number of components 1 1 1
Number of terminals 3 3 3
Maximum operating temperature 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) 235 235 235
Polarity/channel type PNP PNP PNP
Maximum power dissipation(Abs) 0.2 W 0.2 W 0.2 W
Certification status Not Qualified Not Qualified Not Qualified
surface mount YES YES YES
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form GULL WING GULL WING GULL WING
Terminal location DUAL DUAL DUAL
Maximum time at peak reflow temperature 10 10 10
transistor applications SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON
Nominal transition frequency (fT) 200 MHz 200 MHz 200 MHz
Come and learn about the four major trends in switching power supply technology and express your opinions!
At present, switching power supplies manufactured in China account for 80% of the world market, but we have almost no share in the high-end market. my country is currently short of energy, and the pow...
qwqwqw2088 Analogue and Mixed Signal
Exercises and answers for "ARM embedded common modules and integrated system design examples"
Exercises and answers for "ARM Embedded Common Modules and Integrated System Design Examples".rar...
yuandayuan6999 MCU
What are the essential technologies for 5G smartphones?
The introduction of new 5G frequency bands means more antennas must be packed into less space. The number of antennas will increase from 4 to 6 in a typical LTE phone today to 6 to 10 in a 5G smartpho...
alan000345 RF/Wirelessly
[C/C++] [Efficient C language] (10) --ARM design ideas and efficient C programming
ARM core adopts RISC architecture. RISC is a design concept, whose goal is to design a set of simple and effective instruction sets that can be executed in a single cycle at a high clock frequency. Th...
小煜 Programming Basics
flash mtd problem
The flash I use is spansion, 16-bit 32M. I configure mtd and other options in the 2.6 kernel, and the compilation is successful. But after reloading the system, the error "Kernel panic - not syncing: ...
js9413 Embedded System
Recently made AT91SAM9260 board, newly installed
The debugging is completed. I took a photo and removed all the flying wires. Haha.Unfortunately, the JTAG part is missing an RTCK. Oh my god, I want to bang my head against the wall.[[i]This post was ...
chenzhufly Embedded System

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 92  118  855  623  1250  2  3  18  13  26 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号