is provided by an active LOW Chip Enable (CE) and active
LOW Output Enable (OE) and three-state drivers. This device
has an automatic power-down feature, reducing the power
consumption by 81% when deselected. The CY7C199 is in the
standard 300-mil-wide DIP, SOJ, and LCC packages.
An active LOW Write Enable signal (WE) controls the
writing/reading operation of the memory. When CE and WE
inputs are both LOW, data on the eight data input/output pins
(I/O
0
through I/O
7
) is written into the memory location
addressed by the address present on the address pins (A
0
through A
14
). Reading the device is accomplished by selecting
the device and enabling the outputs, CE and OE active LOW,
while WE remains inactive or HIGH. Under these conditions,
the contents of the location addressed by the information on
address pins are present on the eight data input/output pins.
The input/output pins remain in a high-impedance state unless
the chip is selected, outputs are enabled, and Write Enable
(WE) is HIGH. A die coat is used to improve alpha immunity.
Functional Description
The CY7C199 is a high-performance CMOS static RAM
organized as 32,768 words by 8 bits. Easy memory expansion
Logic Block Diagram
Pin Configurations
DIP / SOJ / SOIC
Top View
A
5
A
6
A
7
A
8
A
9
A
10
A
11
A
12
A
13
A
14
I/O
0
I/O
1
I/O
2
GND
1
2
3
4
5
6
7
8
9
10
11
12
13
14
22
23
24
25
26
27
28
1
2
3
4
5
6
7
LCC
Top View
3 2 1 28 27
4
26 A
4
5
25 A
3
6
24 A
2
7
23 A
1
8
22 OE
9
21 A
0
20 CE
10
11
19 I/O
7
12
18 I/O
6
1314151617
I/O2
GND
I/O3
I/O4
I/O5
A7
A6
A5
VCC
WE
A
8
A
9
A
10
A
11
A
12
A
13
A
14
I/O
0
I/O
1
I/O
0
INPUT BUFFER
A
0
A
1
A
2
A
3
A
4
A
5
A
6
A
7
A
8
A
9
CE
WE
OE
I/O
1
ROW DECODER
I/O
2
SENSE AMPS
1024 x 32 x 8
ARRAY
28
27
26
25
24
23
22
21
20
19
18
17
16
15
V
CC
WE
A
4
A
3
A
2
A
1
OE
A
0
CE
I/O
7
I/O
6
I/O
5
I/O
4
I/O
3
I/O
3
I/O
4
I/O
5
COLUMN
DECODER
POWER
DOWN
I/O
6
I/O
7
OE
A
1
A
2
A
3
A
4
WE
V
CC
A
5
A
6
A
7
A
8
A
9
A
10
A
11
TSOP I
Top View
(not to scale)
21
20
19
18
17
16
15
14
13
12
11
10
9
8
A
0
CE
I/O
7
I/O
6
I/O
5
I/O
4
I/O
3
GND
I/O
2
I/O
1
I/O
0
A
14
A
13
A
12
A
10
A
12
A
13
A
11
Selection Guide
7C199
-8
8
120
L
Maximum CMOS Standby Current
L
Shaded area contains advance information.
A
14
Maximum Access Time
Maximum Operating Current
0.5
7C199
-10
10
110
90
0.5
0.05
7C199
-12
12
160
90
10
0.05
7C199
-15
15
155
90
10
0.05
7C199
-20
20
150
90
10
0.05
7C199
-25
25
150
80
10
0.05
7C199
-35
35
140
70
10
0.05
7C199
-45
45
140
10
Unit
ns
mA
mA
Cypress Semiconductor Corporation
Document #: 38-05160 Rev. *A
•
3901 North First Street
•
San Jose
,
CA 95134
•
408-943-2600
Revised January 7, 2003
Range
Commercial
Industrial
Military
Ambient Temperature
[2]
0
°
C to +70
°
C
–40
°
C to +85
°
C
–55
°
C to +125
°
C
V
CC
5V
±
10%
5V
±
10%
5V
±
10%
Electrical Characteristics
Over the Operating Range (-8, -10, -12, -15)
[3]
7C199-8
Parameter
V
OH
V
OL
V
IH
V
IL
I
IX
I
OZ
I
CC
Description
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
Input Load Current
GND < V
I
< V
CC
Output Leakage Current GND < V
O
< V
CC
, Output
Disabled
V
CC
Operating Supply
Current
V
CC
= Max.,
I
OUT
= 0 mA,
f = f
MAX
= 1/t
RC
Com’l
L
Mil
5
5
5
0.5
0.05
0.5
0.05
30
5
10
0.05
Test Conditions
V
CC
= Min., I
OH
=–4.0 mA
V
CC
= Min., I
OL
=8.0 mA
2.2
–0.5
–5
–5
2.4
0.4
V
CC
+0.3V
0.8
+5
+5
120
2.2
–0.5
–5
–5
7C199-10
2.4
0.4
V
CC
+0.3V
0.8
+5
+5
110
85
2.2
–0.5
–5
–5
7C199-12
2.4
0.4
V
CC
+0.3V
0.8
+5
+5
160
85
2.2
–0.5
–5
–5
7C199-15
2.4
0.4
V
CC
+0.3V
0.8
+5
+5
155
100
180
30
5
10
0.05
15
[3]
Min. Max. Min. Max. Min. Max. Min. Max. Unit
V
V
V
V
µA
µA
mA
mA
mA
mA
mA
mA
mA
mA
I
SB1
Automatic CE
Power-down Current—
TTL Inputs
Automatic CE
Power-down Current—
CMOS Inputs
Max. V
CC
, CE >
Com’l
V
IH
, V
IN
> V
IH
or
L
V
IN
< V
IL
, f = f
MAX
Max. V
CC
,
Com’l
CE > V
CC
– 0.3V L
V
IN
> V
CC
– 0.3V
or V
IN
< 0.3V, f = 0 Mil
I
SB2
Electrical Characteristics
Over the Operating Range (-20, -25, -35, -45)
7C199-20
Parameter
V
OH
V
OL
V
IH
V
IL
I
IX
I
OZ
Description
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
Input Load Current
Output Leakage Current
GND < V
I
< V
CC
GND < V
I
<
Test Conditions
V
CC
= Min., I
OL
= 8.0 mA
2.2
–0.5
–5
V
CC
= Min., I
OH
= –4.0 mA 2.4
0.4
7C199-25
2.4
0.4
7C199-35
2.4
0.4
2.2
-0.5
–5
V
CC
+0.3V
0.8
+5
7C199-45
Min.
2.4
0.4
2.2
-0.5
–5
V
CC
+0.3V
0.8
+5
Max. Unit
V
V
V
V
µA
Min. Max. Min. Max. Min. Max.
V
CC
2.2 V
CC
+0.3V
+0.3V
0.8
+5
-0.5
–5
0.8
+5
CY7C199
Electrical Characteristics
Over the Operating Range (-20, -25, -35, -45) (continued)
[3]
7C199-20
Parameter
I
SB1
Description
Automatic CE
Power-down Current—
TTL Inputs
Automatic CE
Power-down Current—
CMOS Inputs
Test Conditions
Max. V
CC
, CE > V
IH
, Com’l
V
IN
> V
IH
or V
IN
< V
IL
, L
f = f
MAX
Max. V
CC
,
Com’l
CE > V
CC
– 0.3V
L
V
IN
> V
CC
– 0.3V or
Mil
V
IN
< 0.3V, f=0
30
5
10
0.05
15
7C199-25
30
5
10
0.05
15
7C199-35
25
5
10
0.05
15
7C199-45
Min.
Max. Unit
25
5
10
0.05
15
mA
mA
mA
µA
mA
Min. Max. Min. Max. Min. Max.
I
SB2
Capacitance
[4 ]
Parameter
C
IN
C
OUT
Description
Input Capacitance
Output Capacitance
Test Conditions
T
A
= 25°C, f = 1 MHz,
V
CC
= 5.0V
Max.
8
8
Unit
pF
pF
AC Test Loads and Waveforms
[5]
R1 481
Ω
5V
OUTPUT
30 pF
INCLUDING
JIG AND
SCOPE
Equivalent to:
R2
255
Ω
5V
OUTPUT
5 pF
INCLUDING
JIG AND
SCOPE
167
Ω
OUTPUT
1.73V
R2
255
Ω
3.0V
10%
GND
R1 481
Ω
ALL INPUT PULSES
90%
90%
10%
≤
t
r
≤
t
r
(a)
(b)
THÉVENIN EQUIVALENT
Data Retention Characteristics
Over the Operating Range (L-version only)
Parameter
V
DR
I
CCDR
t
CDR[4]
t
R [5]
Description
V
CC
for Data Retention
Data Retention Current
Com’l
Com’l L
Chip Deselect to Data Retention Time
Operation Recovery Time
V
CC
= V
DR
= 2.0V, CE > V
CC
–
0.3V, V
IN
> V
CC
– 0.3V or V
IN
<
0.3V
0
200
Conditions
[6]
Min.
2.0
Max.
Unit
V
µA
10
µA
ns
µs
Data Retention Waveform
DATA RETENTION MODE
V
CC
3.0V
t
CDR
CE
Note:
4. Tested initially and after any design or process changes that may affect these parameters.
5. t
R
< 3 ns for the -12 and the -15 speeds. t
R
< 5 ns for the -20 and slower speeds
6. No input may exceed V
CC
+ 0.5V.
V
DR
> 2V
3.0V
t
R
Document #: 38-05160 Rev. *A
Page 3 of 13
CY7C199
Switching Characteristics
Over the Operating Range (-8, -10, -12, -15)
7C199-8
Parameter
Read Cycle
t
RC
t
AA
t
OHA
t
ACE
t
DOE
t
LZOE
t
HZOE
t
LZCE
t
HZCE
t
PU
t
PD
t
WC
t
SCE
t
AW
t
HA
t
SA
t
PWE
t
SD
t
HD
t
HZWE
t
LZWE
Read Cycle Time
Address to Data Valid
Data Hold from Address Change
CE LOW to Data Valid
OE LOW to Data Valid
OE LOW to Low-Z
[8]
OE HIGH to High-Z
CE LOW to Low-Z
CE HIGH to
[8, 9]
[8]
[3, 7]
7C199-10
Min.
10
Max.
7C199-12
Min.
12
Max.
7C199-15
Min.
15
Max.
Unit
ns
15
3
15
7
0
7
3
7
0
15
15
10
10
0
0
9
9
0
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
7
3
ns
ns
Description
Min.
8
Max.
8
3
8
4.5
0
5
3
4
0
8
8
7
7
0
0
7
5
0
5
3
3
10
7
7
0
0
7
5
0
0
3
0
3
10
3
10
5
0
5
3
5
0
10
12
9
9
0
0
8
8
0
6
3
12
12
5
5
5
12
High-Z
[8,9]
CE LOW to Power-up
CE HIGH to Power-down
Write Cycle Time
CE LOW to Write End
Address Set-up to Write End
Address Hold from Write End
Address Set-up to Write Start
WE Pulse Width
Data Set-up to Write End
Data Hold from Write End
WE LOW to High-Z
[9]
WE HIGH to Low-Z
[8]
Write Cycle
[10, 11]
7
Switching Characteristics
Over the Operating Range (-20, -25, -35, -45)
[3, 7]
7C199-20
Parameter
Read Cycle
t
RC
t
AA
t
OHA
t
ACE
t
DOE
t
LZOE
t
HZOE
t
LZCE
t
HZCE
t
PU
Read Cycle Time
Address to Data Valid
Data Hold from Address Change
CE LOW to Data Valid
OE LOW to Data Valid
OE LOW to Low-Z
[8]
OE HIGH to High-Z
[8, 9]
CE LOW to Low-Z
[8]
CE HIGH to
High-Z
[8, 9]
0
CE LOW to Power-up
3
9
0
0
9
3
11
0
3
20
9
0
11
3
15
0
20
20
3
25
10
0
15
3
15
25
25
3
35
16
0
15
35
35
3
45
16
45
45
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Description
Min.
Max.
7C199-25
Min.
Max.
7C199-35
Min.
Max.
7C199-45
Min.
Max.
Unit
Shaded area contains advance information.
Notes:
7. Test conditions assume signal transition time of 3 ns or less for -12 and -15 speeds and 5 ns or less for -20 and slower speeds, timing reference levels of 1.5V,
input pulse levels of 0 to 3.0V, and output loading of the specified I
OL
/I
OH
and 30-pF load capacitance.
8. At any given temperature and voltage condition, t
HZCE
is less than t
LZCE
, t
HZOE
is less than t
LZOE
, and t
HZWE
is less than t
LZWE
for any given device.
9. t
HZOE
, t
HZCE
, and t
HZWE
are specified with C
L
= 5 pF as in part (b) of AC Test Loads. Transition is measured
±500
mV from steady-state voltage.
10. The internal write time of the memory is defined by the overlap of CE LOW and WE LOW. Both signals must be LOW to initiate a write and either signal can terminate
a write by going HIGH. The data input set-up and hold timing should be referenced to the rising edge of the signal that terminates the write.
11. The minimum write cycle time for write cycle #3 (WE controlled, OE LOW) is the sum of t
HZWE
and t
SD
.
Document #: 38-05160 Rev. *A
Page 4 of 13
CY7C199
Switching Characteristics
Over the Operating Range (-20, -25, -35, -45)
[3, 7]
7C199-20
Parameter
t
PD
t
WC
t
SCE
t
AW
t
HA
t
SA
t
PWE
t
SD
t
HD
t
HZWE
t
LZWE
Write Cycle
[10,11]
Write Cycle Time
CE LOW to Write End
Address Set-up to Write End
Address Hold from Write End
Address Set-up to Write Start
WE Pulse Width
Data Set-up to Write End
Data Hold from Write End
WE LOW to
High-Z
[9]
[8]
7C199-25
Min.
Max.
20
25
18
20
0
0
18
10
0
7C199-35
Min.
Max.
20
35
22
30
0
0
22
15
0
7C199-45
Min.
Max.
25
45
22
40
0
0
22
15
0
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
15
3
ns
ns
Description
CE HIGH to Power-down
Min.
Max.
20
20
15
15
0
0
15
10
0
10
3
11
3
3
15
WE HIGH to Low-Z
Switching Waveforms
Read Cycle No. 1
[12, 13]
t
RC
ADDRESS
t
AA
t
OHA
DATA OUT
PREVIOUS DATA VALID
DATA VALID
Read Cycle No. 2
[13, 14]
CE
t
ACE
OE
t
DOE
t
LZOE
HIGH IMPEDANCE
t
LZCE
V
CC
SUPPLY
CURRENT
t
PU
50%
t
PD
ICC
50%
ISB
t
HZOE
t
HZCE
DATA VALID
t
RC
HIGH
IMPEDANCE
DATA OUT
Notes:
12. Device is continuously selected. OE, CE = V
IL
.
13. WE is HIGH for read cycle.
14. Address valid prior to or coincident with CE transition LOW.
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