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FR105GHA0G

Description
Rectifier Diode, 1 Element, 1A, 600V V(RRM), Silicon, DO-204AL, DO-41, 2 PIN
CategoryDiscrete semiconductor    diode   
File Size346KB,4 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Environmental Compliance
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FR105GHA0G Overview

Rectifier Diode, 1 Element, 1A, 600V V(RRM), Silicon, DO-204AL, DO-41, 2 PIN

FR105GHA0G Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerTaiwan Semiconductor
package instructionDO-41, 2 PIN
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresHIGH RELIABILITY, LOW POWER LOSS
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JEDEC-95 codeDO-204AL
JESD-30 codeO-PALF-W2
JESD-609 codee3
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current1 A
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)NOT SPECIFIED
GuidelineAEC-Q101
Maximum repetitive peak reverse voltage600 V
Maximum reverse recovery time0.25 µs
surface mountNO
Terminal surfaceTin (Sn)
Terminal formWIRE
Terminal locationAXIAL
Maximum time at peak reflow temperatureNOT SPECIFIED
FR101G - FR107G
Taiwan Semiconductor
CREAT BY ART
1A, 50V - 1000V Glass Passivated Fast Recovery Rectifiers
FEATURES
- Glass passivated chip junction
- High current capability, Low VF
- High reliability
- High surge current capability
- Low power loss, high efficiency
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
MECHANICAL DATA
Case:
DO-204AL (DO-41)
Molding compound, UL flammability classification rating 94V-0
Part No. with suffix "H" means AEC-Q101 qualified
Packing code with suffix "G" means green compound (halogen-free)
Terminal:
Pure tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 2 whisker test
Weight:
0.34 g (approximately)
DO-204AL (DO-41)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25°C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
Maximum instantaneous forward voltage (Note 1)
@1A
Maximum reverse current @ rated VR
T
J
=25 °C
T
J
=125 °C
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
I
R
trr
C
J
R
θJA
T
J
T
STG
150
10
70
- 55 to +150
- 55 to +150
FR
101G
50
35
50
FR
102G
100
70
100
FR
103G
200
140
200
FR
104G
400
280
400
1
30
1.3
5
100
250
500
FR
105G
600
420
600
FR
106G
800
560
800
FR
107G
1000
700
1000
UNIT
V
V
V
A
A
V
μA
ns
pF
°C/W
°C
°C
Maximum reverse recovery time (Note 2)
Typical junction capacitance (Note 3)
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: Pulse Test with PW=300μs, 1% Duty Cycle
Note 2: Reverse Recovery Test Conditions: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A
Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.
Document Number: DS_D1410034
Version: G15
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