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Datasheet> All Categories > Discrete semiconductor> The transistor> FMMT489
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FMMT489

Description
Small Signal Bipolar Transistor, 1A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size236KB，7 Pages
ManufacturerDiodes Incorporated
Environmental Compliance
Download Datasheet Parametric View All

FMMT489 Overview

Small Signal Bipolar Transistor, 1A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23, 3 PIN

FMMT489 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerDiodes Incorporated
Parts packaging codeSOT-23
package instructionSMALL OUTLINE, R-PDSO-G3
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
Maximum collector current (IC)1 A
Collector-emitter maximum voltage30 V
ConfigurationSINGLE
Minimum DC current gain (hFE)20
JESD-30 codeR-PDSO-G3
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.5 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceMatte Tin (Sn) - annealed
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature40
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)150 MHz

FMMT489 Preview

A Product Line of
Diodes Incorporated
FMMT489
30V NPN MEDIUM POWER TRANSISTOR IN SOT23
Features
BV
CEO
> 30V
I
C
= 1A high Continuous Collector Current
I
CM
Up to 4A Peak Pulse Current
Excellent h
FE
Characteristics Up To 4A
R
SAT
= 175mΩ @ 1A for a Low Equivalent On-Resistance
Low Saturation Voltage < 300mV @ 1A
500mW Power Dissipation
Complementary PNP Type: FMMT589
Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: SOT-23
Case material: Molded Plastic. “Green” Molding Compound.
UL Flammability Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish - Matte Tin Plated Leads, Solderable
per MIL-STD-202, Method 208
e3
Weight: 0.008 grams (Approximate)
SOT23
C
E
C
B
B
E
Top View
Device Symbol
Top View
Pin-Out
Ordering Information
(Note 4)
Product
FMMT489TA
Notes:
Marking
489
Reel Size (inches)
7
Tape Width (mm)
8
Quantity per Reel
3,000
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
489 = Product Type Marking Code
FMMT489
Document number: DS33090 Rev. 4 - 2
1 of 7
www.diodes.com
May 2013
© Diodes Incorporated
A Product Line of
Diodes Incorporated
FMMT489
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Pulse Current
Base Current
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
Value
50
30
7
1
4
200
Unit
V
V
V
A
A
mA
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Thermal Resistance, Junction to Lead (Note 6)
Operating and Storage Temperature Range
Symbol
P
D
R
θJA
R
θJL
T
J,
T
STG
Value
500
250
197
-55 to +150
Unit
mW
°C/W
°C/W
°C
ESD Ratings
(Note 7)
Characteristic
Electrostatic Discharge - Human Body Model
Electrostatic Discharge - Machine Model
Notes:
Symbol
ESD HBM
ESD MM
Value
≥
4,000
≥
400
Unit
V
V
JEDEC Class
3A
C
5. For a device mounted with the collector lead on 15mm X 15mm 1oz weight copper that is on a single-sided FR4 PCB; device is measured under still air
conditions whilst operating in a steady-state.
6. Thermal resistance from junction to solder-point (at the end of the collector lead).
7. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
FMMT489
Document number: DS33090 Rev. 4 - 2
2 of 7
www.diodes.com
May 2013
© Diodes Incorporated
A Product Line of
Diodes Incorporated
FMMT489
Thermal Characteristics and Derating Information
1
0.6
Max Power Dissipation (W)
-I
C
Collector Current (A)
V
CE(sat)
Limit
15 x 15mm FR4 1oz Copper
0.5
0.4
0.3
0.2
0.1
0.0
0
20
40
60
80 100 120 140 160
100m
DC
1s
100ms
10ms
15 x 15mm FR4
1oz Copper
1ms
100µs
10m
1m
1
10
100
-V
CE
Collector-Emitter Voltage (V)
Temperature (°C)
Safe Operating Area
240
200
160
120
80
40
0
100µ
1m
10m 100m
D=0.2
Single Pulse
D=0.05
D=0.1
D=0.5
Derating Curve
15 x 15mm FR4 1oz Copper
Thermal Resistance (°C/W)
Max Power Dissipation (W)
15 x 15mm FR4 1oz Copper
100
10
1
1
10
100
1k
0.1
100µ
1m
10m 100m
1
10
100
1k
Pulse Width (s)
Pulse Width (s)
Transient Thermal Impedance
Pulse Power Dissipation
FMMT489
Document number: DS33090 Rev. 4 - 2
3 of 7
www.diodes.com
May 2013
© Diodes Incorporated
A Product Line of
Diodes Incorporated
FMMT489
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 8)
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
Collector-Emitter Cutoff Current
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
I
CES
100
100
60
20
Min
50
30
7
100
100
100
-
300
-
-
Max
Unit
V
V
V
nA
nA
nA
Test Condition
I
C
= 100 µA
I
C
= 10 mA
I
E
= 100 µA
V
CB
= 30V
V
EB
= 6V
V
CES
= 30V
I
C
= 1mA, V
CE
= 2V
I
C
= 1A, V
CE
= 2V
I
C
= 2A, V
CE
= 2V
I
C
= 4A, V
CE
= 2V
Static Forward Current Transfer Ratio (Note 8)
h
FE
Collector-Emitter Saturation Voltage
(Note 8)
Base-Emitter Turn-On Voltage (Note 8)
Base-Emitter Saturation Voltage (Note 8)
Output Capacitance
Transition Frequency
Note:
V
CE(sat)
V
BE(on)
V
BE(sat)
C
obo
f
T
150
300
600
1.0
1.1
10
mV
mV
V
V
pF
MHz
I
C
= 1A, I
B
= 100mA
I
C
= 2A, I
B
= 200mA
I
C
= 1A, V
CE
= 2V
I
C
= 1A, I
B
= 100mA
V
CB
= 10V, f = 1MHz
V
CE
= 10V, I
C
= 50mA,
f = 100MHz
8. Measured under pulsed conditions. Pulse width
≤
300µs. Duty cycle
≤
2%
FMMT489
Document number: DS33090 Rev. 4 - 2
4 of 7
www.diodes.com
May 2013
© Diodes Incorporated
A Product Line of
Diodes Incorporated
FMMT489
Typical Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
FMMT489
Document number: DS33090 Rev. 4 - 2
5 of 7
www.diodes.com
May 2013
© Diodes Incorporated
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